Mid-infrared Semiconductor Optoelectronics

By: Anthony Krier (Editor)

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Paperback | 14 March 2012

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772 Pages

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23.39 x 15.6 x 3.91

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Part I: Materials and Device Design Considerations.- Theory of Mid-Wavelength Infrared Laser Active Regions: Intrinsic Properties and Design Strategies.- Bandstructure and High-pressure Measurements.- Part II: Lasers.- III-Sb-based Type-I QW Diode Lasers.- VCSELs Emitting in the 2 - 3 µm Wavelength Range.- Antimonide Type-II 'W' Lasers.- Interface Lasers with Asymmetric Band Offset Confinement.- IV-VI Semiconductors for Mid-Infrared Optoelectronic Devices.- Mid-infrared Vertical Cavity Surface Emitting Lasers based on the Lead Salt Compounds.- Optically Pumped MIR Lasers.- Mid-infrared Quantum Cascade Lasers.- Part III: Detectors.- Mid-infrared Electroluminescence in LEDs Based on InAs and Related Alloys.- LED-Photodiode Opto-pairs.- QWIP Detectors for the MWIR.- Negative Luminescence.- Mid-Infrared Quantum Dot Photodetectors.- Quantum Photovoltaic Devices Based on Antimony Compound Semiconductors.- High-speed Avalanche Photodiodes for the 2-5 µm Spectral Range.- Part IV: Applications.- Infrared Methods for Gas Detection.- Mid-infrared Biomedical Applications.- The Development of Infrared Countermeasure Technology and Systems.- Survey of Thermophotovoltaic (TPV) Devices.

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