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Nanoscale Transistors

Device Physics, Modeling and Simulation

By: Mark Lundstrom, Jing Guo

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Hardcover | 21 December 2005

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228 Pages

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23.5 x 15.88 x 1.78

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To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

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Published: 29th October 2010

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Preface	p. vii
Basic Concepts	p. 1
Introduction	p. 1
Distribution functions	p. 1
3D, 2D, and 1D Carriers	p. 3
Density of states	p. 7
Carrier densities	p. 8
Directed moments	p. 10
Ballistic transport: semiclassical	p. 12
Ballistic transport: quantum	p. 16
The NEGF formalism	p. 21
Scattering	p. 25
Conventional transport theory	p. 26
Resistance of a ballistic conductor	p. 31
Coulomb blockade	p. 33
Summary	p. 37
Devices, Circuits and Systems	p. 39
Introduction	p. 39
The MOSFET	p. 40
1D MOS Electrostatics	p. 45
2D MOS Electrostatics	p. 54
MOSFET Current-Voltage Characteristics	p. 61
The bipolar transistor	p. 67
CMOS Technology	p. 69
Ultimate limits	p. 75
Summary	p. 80
The Ballistic Nanotransistors	p. 83
Introduction	p. 83
Physical view of the nanoscale MOSFETs	p. 86
Natori's theory of the ballistic MOSFET	p. 91
Nondegenerate, degenerate, and general carrier statistics	p. 94
The ballistic MOSFET (nondegenerate conditions)	p. 94
The ballistic MOSFET (T[subscript L] = 0, degenerate conditions)	p. 97
The ballistic MOSFET (general conditions)	p. 103
Beyond the Natori model	p. 105
Role of the quantum capacitance	p. 105
Two dimensional electrostatics	p. 108
Discussion	p. 110
Summary	p. 113
Scattering Theory of the MOSFET	p. 115
Introduction	p. 115
MOSFET physics in the presence of scattering	p. 117
The scattering model	p. 120
The transmission coefficient under low drain bias	p. 126
The transmission coefficient under high drain bias	p. 129
Discussion	p. 134
Summary	p. 136
Nanowire Field-Effect Transistors	p. 140
Introduction	p. 140
Silicon nanowire MOSFETs	p. 140
Evaluation of the I-V characteristics	p. 143
The I-V characteristics for nondegenerate carrier statistics	p. 143
The I-V characteristics for degenerate carrier statistics	p. 145
Numerical results	p. 147
Carbon nanotubes	p. 153
Bandstructure of carbon nanotubes	p. 155
Bandstructure of graphene	p. 155
Physical structure of nanotubes	p. 158
Bandstructure of nanotubes	p. 160
Bandstructure near the Fermi points	p. 165
Carbon nanotube FETs	p. 169
Carbon nanotube MOSFETs	p. 171
Schottky barrier carbon nanotube FETs	p. 173
Discussion	p. 176
Summary	p. 179
Transistors at the Molecular Scale	p. 182
Introduction	p. 182
Electronic conduction in molecules	p. 183
General model for ballistic nanotransistors	p. 187
MOSFETs with 0D, 1D, and 2D channels	p. 193
Molecular transistors?	p. 196
Single electron charging	p. 199
Single electron transistors	p. 203
Summary	p. 209
Index	p. 213
Table of Contents provided by Ingram. All Rights Reserved.

Nanoscale Transistors

Device Physics, Modeling and Simulation

At a Glance

Hardcover

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