Springer Materials Science

Status and Challenges

By: Jarek Dabrowski (Editor), Eicke R. Weber (Editor)

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Hardcover | 5 May 2004

At a Glance

Hardcover
516 Pages

Dimensions(cm)
23.5 x 15.88 x 1.91

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$329.00

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Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.

Industry Reviews

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"This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool. Eleven contributions make up the book; each is supported by a wealth of references. ... A valuable reference and guide to have on the shelf for frequent use and study. Certainly, the expertise and research experience of the contributors cannot be questioned. Summing up ... a richly rewarding work." (Current Engineering Practice, Vol. 47 (3), 2004-2005)

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You Can Find This Book In

Non-Fiction Engineering & Technology Electronics & Communications Engineering Electronics Engineering Electronic Devices & Materials Semi-Conductors & Super-Conductors Science Physics Technology in General Nanotechnology Mechanical Engineering & Materials Materials Science

Industrial Chemistry & Manufacturing Technologies Engineering in General Production & Industrial Engineering

Transistors and atoms	p. 1
Atomistic simulations of process at surfaces	p. 39
Atomistic simulations in materials processing	p. 73
Atomistic simulation of decanano MOSFETs	p. 111
Modeling and simulation of heterojunction bipolar transistors	p. 157
Gate oxide reliability : physical and computational models	p. 201
High-K dielectrics : the example of Pr[subscript 2]O[subscript 3]	p. 259
Atomistic simulation of Si[subscript 3]N[subscript 4] CVD from dichlorosilane and NH[subscript 3]	p. 295
Interconnects and propagation of high frequency signals	p. 357
Modeling of electromigration in interconnects	p. 387
Predictive modeling of transition metal gettering : applications and materials science challenges	p. 457
Table of Contents provided by Blackwell. All Rights Reserved.

Springer Materials Science

Status and Challenges

At a Glance

Hardcover

Industry Reviews

Shipping

How to return your order

Defective items

You Can Find This Book In

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