Technology of Integrated Circuits

By: D. Widmann, H. Mader, H. Friedrich

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Hardcover | 1 August 2009

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Hardcover
366 Pages

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23.5 x 15.88 x 1.91

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Strongly involved with SIEMENS Corp. in the tremendous recent developments of process technologies for IC fabrication the authors comprehensively record their authoritative knowledge and practical experience. New materials , modern planar technology, process designs for CMOS, Bipolar, BICMOS and smart-power technologies, self-adjusting doping techniques are just a few of the highlights. With its strong application-orientation this is a need-to-have book for professionals in semiconductor industries. Senior students in electrical engineering and physics can use it as a textbook because of the systematic treatment of the subjects. With regard to their later careers as industrial engineers they will particularly appreciate the deep insight into the actual methods and problems of IC manufacturing.

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List of Symbols	p. XIII
Key to the different layers in integrated circuits	p. XVIII
Introduction	p. 1
Basic principles of integrated circuits technology	p. 3
Film technology	p. 13
Film production processes	p. 13
The CVD process	p. 13
Thermal oxidation	p. 20
Vapour phase deposition	p. 27
Sputtering	p. 29
Spin coating	p. 33
Film production by ion implantation	p. 34
Film production using wafer-bonding and back-etching	p. 34
Annealing techniques	p. 35
The monocrystalline silicon wafer	p. 38
Geometry and crystallography of silicon wafers	p. 38
Doping of silicon wafers	p. 39
Monocrystalline silicon growing techniques	p. 39
Epitaxial layers	p. 41
Uses for epitaxial layers	p. 41
Diffusion of doping atoms from the substrate into the epitaxial layer	p. 43
Thermal SiO₂ layers	p. 46
Uses of thermal SiO₂ layers	p. 46
The LOCOS technique	p. 47
Properties of thin thermal SiO₂ films	p. 53
Deposited SiO₂ films	p. 59
Creating deposited SiO₂ films	p. 59
Applications of deposited SiO₂ films	p. 60
Spacer technology	p. 60
Trench isolation	p. 62
SiO₂ isolation films for multi-level metallization	p. 62
Phosphorus glass films	p. 63
Producing phosphorus glass films	p. 64
Flow-glass	p. 66
Thermal phosphorus glass	p. 67
Silicon nitride films	p. 67
Producing silicon nitride films	p. 68
Nitride films as an oxidation barrier	p. 68
Nitride films as a capacitor dielectric	p. 69
Using nitride films for passivation	p. 70
Polysilicon films	p. 70
Producing polysilicon films	p. 70
Grain structure of polysilicon films	p. 71
Conductivity of polysilicon films	p. 72
Uses of polysilicon films	p. 74
Silicide films	p. 78
Producing silicide Films	p. 79
Polycide films	p. 81
Silication of source/drain regions	p. 83
Refractory metal films	p. 83
Aluminium films	p. 85
Producing aluminium films	p. 85
Crystal structure ofaluminium films	p. 86
Electromigration in aluminium interconnections	p. 87
Aluminium-silicon contacts	p. 88
Aluminium-aluminium contacts	p. 90
Organic films	p. 91
Spin-on glass films	p. 91
Polyimide films	p. 92
Lithography	p. 95
Linewidth dimension, placement errors and defects	p. 96
Photolithography	p. 98
Photoresist films	p. 98
Formation of photoresist patterns	p. 102
Light intensity variation in the photoresist	p. 105
Special photoresist techniques	p. 110
Optical exposure techniques	p. 116
Resolution capability ofoptical exposure techniques .	p. 119
Alignment accuracy of optical exposure equipment	p. 130
Defects occurring in optical lithography	p. 133
X-ray lithography	p. 134
Wavelength region for X-ray lithography	p. 135
X-ray resists	p. 136
X-ray sources	p. 137
X-ray masks	p. 142
Alignment procedure for X-ray lithography	p. 144
Radiation damage in X-ray lithography	p. 144
Opportunities for Y-ray lithography	p. 144
Electron lithography	p. 145
Electron resists	p. 145
Resolution capability of electron lithography	p. 146
Electron beam pattern generators	p. 148
Electron projection equipment	p. 153
Alignment techniques in electron lithography	p. 154
Radiation damage in electron lithography	p. 154
Ion lithography	p. 156
Ion resists	p. 156
Ion beam writing	p. 158
Ion beam projection	p. 160
Resolution capability ofion lithography	p. 162
Pattern generation without using lithography	p. 166
Etching technology	p. 169
Wet etching	p. 170
Wet chemical etching	p. 170
Chemical-mechanical polishing	p. 171
Dry etching	p. 174
Physical dry etching	p. 174
Chemical dry etching	p. 176
Physical-chemical dry etching	p. 178
Chemical etching reactions	p. 186
Etching gases	p. 188
Process optimization	p. 188
Endpoint detection	p. 193
Dry etch processes	p. 196
Dry etching of silicon nitride	p. 197
Dry etching of polysilicon	p. 197
Dry etching ofmonocrystalline silicon	p. 199
Dry etching ofmetal silicides and refractory metals	p. 200
Dry etching of silicon dioxide	p. 201
Dry etching ofaluminium	p. 203
Dry etching ofpolymers	p. 205
Doping technology	p. 207
Thermal doping	p. 208
Doping by ion implantation	p. 209
Ion implantation machines	p. 209
Implanted doping profiles	p. 211
Activation and diffusion of dopant atoms	p. 219
Activating implanted dopant atoms	p. 219
Intrinsic diffusion of dopant atoms	p. 220
Diffusion for high concentrations of dopant atoms	p. 223
Oxidation enhanced diffusion	p. 224
Diffusion of dopant atoms at interfaces	p. 225
Diffusion of dopant atoms in films	p. 227
Sheet resistance of doped layers	p. 229
Diffusion at the edge of doped regions	p. 230
Diffusion of non-doping materials	p. 231
Cleaning technology	p. 235
Contaminants and their effect	p. 235
Clean rooms, clean materials and clean processes	p. 239
Clean rooms	p. 239
Clean materials	p. 242
Clean processing	p. 244
Wafer cleaning	p. 244
Process integration	p. 249
The various MOS and bipolar technologies	p. 249
Active components in integrated circuits	p. 249
Comparsion of MOS and bipolar technologies	p. 249
Passive components in integrated circuits	p. 252
Technology architecture	p. 252
Architecture of MOS technology	p. 252
Architecture of bipolar and BICMOS technologies	p. 254
Transistors in integrated circuits	p. 256
Design of MOS transistors and their isolation	p. 256
Design of DMOS transistors	p. 262
Design of bipolar transistors and their isolation	p. 264
Memory cells	p. 267
Design of static memory cells	p. 267
Design of dynamic memory cells	p. 269
Design of non-volatile memory cells	p. 272
Multilayer metallization	p. 276
Planarization of surfaces in integrated circuits	p. 277
Contacts in integrated circuits	p. 281
Metallization in integrated ciruits	p. 284
Passivation of integrated circuits	p. 285
Detailed process sequence ofselected technologies	p. 286
Digital CMOS process	p. 286
BICMOS process	p. 286
Microwave bipolar process	p. 286
DRAM process	p. 295
References	p. 323
Subject Index	p. 329
Table of Contents provided by Publisher. All Rights Reserved.

Technology of Integrated Circuits

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