| Electron transport in curved low dimensional electron systems | p. 1 |
| Fabrication and characterization of InAs mesoscopic devices | p. 7 |
| Nonlinear effects on quantum interference in electron billiards | p. 11 |
| Prediction of entanglement detection by I-V characteristics | p. 15 |
| Simulation of entanglement creation for carrier-impurity scattering in a 2D system | p. 19 |
| Super-poissonian current fluctuations in tunnelling through coupled quantum dots | p. 23 |
| Ultrafast formation of coupled phonon-plasmon modes in InP observed with femtosecond terahertz spectroscopy | p. 29 |
| Optical coherent control of polariton modes in ZnSe single-quantum wells | p. 33 |
| Optical properties of coupled quantum disk-waveguide structure | p. 37 |
| Picosecond spin-preserving carrier capture in InGaAs/GaAs quantum dots | p. 41 |
| Influence of surfaces on the pure dephasing of quantum dots | p. 45 |
| Exploiting the non-Markovian nature of carrier-phonon dynamics : multi-pulse control of decoherence in quantum dots | p. 49 |
| Numerical study of weak localization effects in disordered cavities | p. 55 |
| Carrier scattering by optical phonons, two-phonon processes in photon absorption, and spontaneous polarization in wurtzites | p. 59 |
| Terahertz plasma oscillations in nanotransistors | p. 63 |
| High-intensity THz radiation from a large interdigitated array photo-conductive emitter | p. 73 |
| Broadband terahertz emission from ion-implanted semicondcutors | p. 77 |
| THz collective real-space oscillations of ballistic electrons in wide parabolic potential wells : an exotic transport regime | p. 81 |
| Effect of injector doping on non-equilibrium electron dynamics in mid-infrared GaAs/AlGaS quantum cascade lasers | p. 85 |
| Experimental investigation of hot carriers in THz and mid-IR quantum cascade lasers | p. 89 |
| Time- and spectrally-resolved THz photoconductivity in quantum hall devices | p. 95 |
| Transport properties and terahertz emission in narrow minigap GaAs-GaAlAs superlattices | p. 99 |
| Investigation of antenna-coupled MOM diodes for infrared sensor applications | p. 105 |
| Transport and noise in ultrafast unipolar nanodiodes and nanotransistors | p. 109 |
| Monte Carlo study of coupled SO phonon-plasmon scattering in Si MOSFETs with high [kappa]-dielectric gate stacks : hot electron and disorder effects | p. 115 |
| Implementation of separable scattering mechanisms in three-dimensional quantum mechanical simulations of devices | p. 121 |
| A 2D-NEGF quantum transport study of unintentional charges in a double gate nanotransistor | p. 125 |
| Wigner function RTD simulations with DMS barriers | p. 129 |
| High field transport in GaN and AlGaN/GaN heterojunction field effect transistors | p. 133 |
| Impact ionization and high-field electron transport in GaN | p. 139 |
| Studies of high field transport in a high-quality InN film by ultrafast Raman spectroscopy | p. 143 |
| Monte Carlo investigation of dynamic transport in nitrides | p. 147 |
| High-field transport in nitride channels : a hot-phonon bottleneck | p. 151 |
| Quantum transport and spin polarization in strongly biased semiconductor superlattices with Rashba spin-orbig coupling | p. 155 |
| Temperature dependent transport in spin valve transistor structures | p. 159 |
| Spin filtering effects in a quantum point contact | p. 163 |
| Exchange effects in the Wigner-function approach | p. 167 |
| Few-particle quantum transmitting boundary method : scattering resonances through a charged ID quantum dot | p. 171 |
| The R-[Sigma] approach to tunnelling in nanoscale devices | p. 175 |
| Monte Carlo simulation of solid-state thermionic energy conversion devices based on non-planar heterostructure interfaces | p. 179 |
| Simulations of inelastic tunnelling in molecular bridges | p. 183 |
| Phonon effects in nanotubes : phase space reduction and electron conductance | p. 187 |
| Carbon nanotubes films for sensing applications : from piezoresistive sensor to gas sensing | p. 191 |
| Electro-thermal transport in silicon and carbon nanotube devices | p. 195 |
| Silicon-based ion channel platforms | p. 201 |
| Implicit water simulations of non-equilibrium charge transport in ion channels | p. 205 |
| An investigation of the dependence of ionic conduction on the dielectric properties of porin | p. 211 |
| Physical mechanisms for ion-current levelling off in the KcsA channel through combined Monte Carlo/molecular dynamics simulations | p. 217 |
| Simulations of the gramicidin A channel by using the TR-PNP model | p. 221 |
| Phonon emission and absorption by holes in the HOMO bands of duplex DNA | p. 225 |
| An impedance network model for the electrical properties of a single-protein nanodevice | p. 229 |
| Field effect transistor constructed of novel structure with short-period (GaAs)[subscript n]/(AlAs)[subscript m] superlattice | p. 233 |
| Predominance of geminate process of exciton formation in AlGaAs layers at low excitation | p. 237 |
| Electron-distribution function for the Boltzmann equation in semiconductors | p. 241 |
| Giant increase of electron saturated drift velocity in a MODFET channel | p. 245 |
| Technological crossroads : silicon or III-V for future generation nanotransistors | p. 249 |
| Optical phonon modes and electron-phonon interaction in a spheroidal quantum dot | p. 253 |
| Terahertz negative differential conductivity in heterostructures due to population inversion and bunching of ballistic electrons | p. 257 |
| Carrier dynamics of single ZnO nanowires | p. 261 |
| Tradition hot-electron MOS devices for novel optoelectronic applications | p. 265 |
| Investigation of self-heating effects in individual SOI devices and device-device interactions | p. 269 |
| Measurements of the electrical excitation of QH-devices in the real time domain | p. 273 |
| Impact ionization and avalanche multiplication in AlGaAs : a time-resolved study | p. 277 |
| Fermi-dirac statistics in Monte Carlo simulations of InGaAs MOSFETs | p. 281 |
| Monte Carlo study of the suppression of diffusion noise | p. 287 |
| TeraHertz emission from nanometric HEMTs analyzed by noise spectra | p. 291 |
| Electron transport in novel Sb-based quantum cascade lasers | p. 295 |
| Quantum phonon-limited high-field electron transport in semiconductors | p. 301 |
| Transit time and velocity distribution functions in decananometer gate-length SOI MOSFETs | p. 305 |
| Collision of fano resonances in a molecular ring | p. 309 |
| Simulation of domain formation in p-Si/SiGe quantum cascade structures | p. 313 |
| Calculation of optical gain and electron relaxation rates in single- and double-phonon resonant quantum cascade lasers in a magnetic field | p. 317 |
| Curvature-dependent conductance resonances in quantum cavities | p. 321 |
| Mid-infrared optical absorption in germanium under intense laser fields | p. 325 |
| Interface related radiative recombination on a type-II broken-gap single GaInAsSb/InAs heterojunction | p. 329 |
| Drift and diffusion in superlattices within the Wannier-Stark approach | p. 333 |
| Ballistic transport in arbitrary oriented nanowire MOSFETs | p. 337 |
| Scanning tunnelling microscopy of ultrathin silicon-on-insulator | p. 341 |
| Effect of regular and irregular potential perturbations in mesoscopic cavities | p. 345 |
| Simulation of electronic/ionic mixed conduction in solid ionic memories | p. 349 |
| Full-band modeling of magnetic semiconductors | p. 353 |
| Cellular Monte Carlo modeling of Al[subscript x]In[subscript 1-x]Sb/InSb quantum well transistors | p. 359 |
| Non-parabolic model for the solution of 2-D quantum transverse states applied to narrow conduction channel simulation | p. 365 |
| Self-consistent quantum transport theory of carrier capture in heterostructures | p. 369 |
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