Springer Materials Science

By: M.R. Oliver (Editor)

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Hardcover | 26 January 2004 | Edition Number 3

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444 Pages

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24.13 x 15.88 x 1.91

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Chemical Mechanical Planarization (CMP) has emerged in the last two decades and grown rapidly as a basic technology widely used in semiconduc- tor device fabrication. As a semiconductor processing step, it was developed at IBM in the mid 1980s. From this beginning the technology has been widely adopted throughout the semiconductor industry. As basic CMP technology has been understood and accepted throughout the semiconductor industry, its uses in different parts of the semiconductor process have multiplied. This includes special steps for some special process- ing flows, such as for DRAM technology. In addition, the availability of CMP technology has enabled the implementation of new technologies, with the best example being copper interconnect technology. Copper could not be practi- cally implemented into semiconductor process flows until the advent of CMP. Unfortunately, the rapid acceptance and implementation of CMP technol- ogy in wafer fabrication has occurred without a corresponding rate of advance in the underlying science. Progress is being made in understanding the un- derlying CMP mechanisms, but, in general, it is slow and uneven. The most noteworthy exception to this trend is the science of metal CMP reactions, where the scientific understanding is actually driving much of the advance of the technology. There has been no corresponding progress in other CMP areas however.

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Published: 1st December 2010

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Introduction	p. 1
Original Motivation for CMP	p. 1
CMP Technology and Its Technical Understanding	p. 1
Applications of CMP to Semiconductor Processing	p. 2
Polishing Tools and Consumables of CMP Technology	p. 3
Post CMP Cleaning	p. 4
Integration of CMP Into the Semiconductor Fabrication Process	p. 5
Pattern Dependency Issues	p. 5
Other Issues	p. 6
References	p. 6
CMP Technology	p. 7
Background and Motivation for CMP	p. 7
Description ofthe CMP Process	p. 8
Polishing Equipment	p. 8
PolishProcess	p. 12
Planarization	p. 14
Polish Process Variables	p. 19
Scales and Random Polishing Effects	p. 26
Random Effects	p. 30
Slurries with Particles Other than Silica	p. 31
Non-ILD Non-Metal CMP	p. 33
Conclusion	p. 37
References	p. 38
Metal Polishing Processes	p. 41
Metal Polishing Processes	p. 41
Evolution of Damascene Surface Morphology During Polishing	p. 46
Specifics of Tungsten and Copper Polishing	p. 51
Metal Polishing Chemistry	p. 60
Acid-Base Equilibria	p. 62
Buffering	p. 63
Oxidation-Reduction Reactions	p. 66
Half Reactions	p. 67
Electrode Potentials	p. 67
Complexation	p. 71
Surfactants and Inhibitors	p. 74
The Future of Metal Polishing	p. 79
References	p. 80
Metal CMP Science	p. 85
Introduction	p. 85
Tungsten Experimental Data -Chemical and Electrochemical	p. 86
Tungsten Experimental Data -Role of Slurry Particle	p. 97
Conclusions on Mechanisms on W CMP	p. 103
Copper Experimental Data -Chemical and Electrochemical	p. 104
Copper Summary	p. 118
CMPRemovalModels	p. 119
TungstenModelofPaul	p. 120
TungstenModelofSteinetal	p. 124
Copper Model of Babu et al	p. 127
Model Summary	p. 129
Future Trends	p. 130
References	p. 131
Equipment Used in CMP Processes	p. 133
CMPToolRequirements	p. 133
RotaryCMPTools	p. 138
Rotary Kinematics	p. 139
Carousel Systems	p. 142
Orbital Systems	p. 143
Linear Systems	p. 146
Modified Grinding Systems	p. 148
Web Format Tools	p. 149
Electrochemical Mechanical Planarization	p. 151
Carrier Technology	p. 151
Pad Conditioning	p. 155
Endpointing	p. 158
Summary	p. 163
References	p. 163
CMP Polishing Pads	p. 167
Introduction	p. 167
Polymer Requirements for Polishing Pads	p. 167
Basics ofPolyurethanes	p. 170
Types of Commercially Available Polishing Pads and Their Manufacture	p. 172
ControlofPolyurethanePadProperties	p. 180
Control ofPadProperties Through PadGeometry	p. 189
Relationships Between Pad Properties and Polishing Performance	p. 197
Slurryless Pad Technology	p. 207
Future Trends in Polishing Pads	p. 208
Acknowledgements	p. 210
References	p. 210
Fundamentals of CMP Slurry	p. 215
Introduction: Basic Components of CMP Slurries	p. 215
Surface Science and Electrochemistry in CMP Slurry	p. 217
Slurry as a Suspension	p. 222
SolidsContent	p. 232
Slurry Handling	p. 241
Future Trends in Slurry	p. 245
Summary	p. 246
References	p. 247
CMP Cleaning	p. 251
Introduction	p. 251
PolishingandtheControlofCMP Defects	p. 259
Mechanical Brush Scrubbing for CMP Cleaning	p. 260
Non-Contact Processes for CMP Cleaning	p. 263
Other Cleaning Technologies	p. 264
Cleaning of Oxides, W, STI, Cu, and low k Materials	p. 265
Future Directions for CMP Cleaning	p. 276
Conclusion	p. 277
References	p. 277
Patterned Wafer Effects	p. 283
Introduction	p. 283
PlanarizationTerminologyandCharacterization	p. 283
PatternDependenciesinDielectricCMP	p. 299
Metal CMP Pattern Dependencies	p. 326
References	p. 344
Integration Issues of CMP	p. 351
Oxide CMP Integration	p. 351
Tungsten CMP	p. 373
STIIntegration	p. 384
Copper Damascene Integration	p. 396
Other Applications of CMP	p. 407
References	p. 412
Appendix: Pourbaix Diagrams	p. 419
References	p. 425
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Springer Materials Science

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