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Springer Materials Science

By: Hadis Morkoc, Hadis Morkoa

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Hardcover | 28 September 1999

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Hardcover
516 Pages

Dimensions(cm)
23.39 x 15.6 x 2.87

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Under the umbrella of nitride semiconductors and devices, the book treats semiconductor fundamentals, technology and nanotechnology with a clarity and depth not found elsewhere. The book is a combination of graduate level text book with all the necessary basis and derivations involving semiconductor and device physics and engineering. It covers both theory and practice, and the major developments in light-emitting Nitride semiconductors. It includes extensive tabular compilation of properties. The depth and scope of the book and the easily understandable treatment of its subject matter are certain to lift any a-priori cloud present.

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Non-Fiction Engineering & Technology Electronics & Communications Engineering Electronics Engineering Electronic Devices & Materials Semi-Conductors & Super-Conductors Science Chemistry Physics Materials & States of Matter Electricity Mechanical Engineering & Materials

Materials Science

Foreword. A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove	p. XV
Introduction	p. 1
General Properties of Nitrides	p. 8
Crystal Structure of Nitrides	p. 8
Gallium Nitride	p. 11
Chemical Properties of GaN	p. 13
Thermal and Mechanical Properties of GaN	p. 14
Aluminum Nitride	p. 17
Thermal and Chemical Properties of AlN	p. 17
Mechanical Properties of AlN	p. 19
Electrical Properties of AlN	p. 20
Optical Propertiesof AlN	p. 21
Indium Nitride	p. 23
Crystal Structureof InN	p. 24
Mechanical and Thermal Properties of InN	p. 25
Electrical Properties of InN	p. 25
Optical Properties of InN	p. 26
Ternary and Quaternary Alloys	p. 26
Al GaN Alloy	p. 27
In GaN Alloy	p. 29
In AlN Alloy	p. 31
Substrates for Nitride Epitaxy	p. 31
A Appendix Fundamental Data for Nitride Systems	p. 39
Electronic Band Structure of Bulk and QW Nitrides	p. 45
Band-Structure Calculations	p. 45
Effectof Strainonthe Band Structureof GaN	p. 51
kċp Theory and the Quasi-Cubic Model	p. 52
Quasi-Cubic Approximation	p. 54
Confined States	p. 57
Conduction Band	p. 61
Valence Band	p. 63
Exciton Binding Energy in Quantum Wells	p. 66
Polarization Effects	p. 68
A Appendix	p. 80
Growth of Nitride Semiconductors	p. 83
Bulk Growth	p. 84
Substrates Used	p. 87
Conventional Substrates	p. 88
Compliant Substrates	p. 88
Van der Waals Substrates	p. 89
Substrate Preparation	p. 89
Substrate Temperature	p. 94
Epitaxial Relationship to Sapphire	p. 95
Growth by Hydride Vapor Phase Epitaxy (HVPE)	p. 98
Growth by OMVPE (MOCVD)	p. 99
Sources	p. 100
Buffer Layers	p. 102
Lateral Growth	p. 109
Growth on Spinel (MgAl₂O₄)	p. 112
Molecular Beam Epitaxy	p. 112
MBE Growth Systems	p. 113
Plasma-Enhanced MBE	p. 114
Reactive-Ion MBE	p. 117
Reactive MBE	p. 118
Modeling of the MBE-Like Growth	p. 125
Growth on 6H-SiC (0001)	p. 127
Growthon ZnO	p. 129
Growthon GaN	p. 136
Growthofp-Type GaN	p. 137
Growthofn-Type InN	p. 139
Growthofn-Type Ternaryand Quaternary Alloys	p. 139
Growthofp-Type Ternaryand Quaternary Alloys	p. 140
Critical Thickness	p. 141
Defects and Doping	p. 149
Dislocations	p. 150
Stacking-Fault Defects	p. 151
Point Defects and Autodoping	p. 153
Vacancies, Antisites and Interstitials	p. 154
Role of Impurities and Hydrogen	p. 160
Optical Signatureof Defectsin GaN	p. 163
Intentional Doping	p. 165
n-Type Dopingwith Silicon, Germanium and Selenium	p. 165
p-Type Doping	p. 167
Dopingwith Mg	p. 168
Optical Manifestation of Group-II Dopant-Induced Defects in GaN	p. 179
Doping with Beryllium	p. 182
Dopingwith Mercury	p. 182
Dopingwith Carbon	p. 183
Dopingwith Zinc	p. 184
Dopingwith Caicium	p. 184
Dopingwith Rare Earths	p. 184
Ion Implantationand Diffusion	p. 185
Defect Analysis by Deep-Level Transient Spectroscopy	p. 186
Summary	p. 190
Metal Contacts to GaN	p. 191
A Primer for Semiconductor-Metal Contacts	p. 192
Current Flowin Metal-Semiconductor Junctions	p. 196
The Regime Dominated by Thermionic Emission	p. 197
Thermionic Field-Emission Regime	p. 198
Direct Tunneling Regime	p. 199
Leakage Current	p. 200
The Case of a Forward-Biasedp-n Junction	p. 200
Resistance of an Ohmic Contact	p. 202
Specific Contact Resistivity	p. 203
Semiconductor Resistance	p. 204
Determinationofthe Contact Resistivity	p. 206
Ohmic Contactsto GaN	p. 207
Non-Alloyed Ohmic Contacts	p. 208
Alloyed Ohmic Contacts	p. 209
Multi-Layer Ohmic Contacts	p. 209
Structural Analysis	p. 213
Observations	p. 215
Determination of Impurity and Carrier Concentrations	p. 216
Impurity Binding Energy	p. 216
Conductivity Type: Hot Probeand Hall Measurements	p. 217
Densityof States and Carrier Concentration	p. 219
Electronand Hole Concentrations	p. 223
Temperature Dependenceof the Hole Concentration	p. 224
Temperature Dependenceof the Electron Concentration	p. 227
Multiple Occupancyof the Valence Bands	p. 229
A Appendix Fermi Integral	p. 232
Carrier Transport	p. 233
Ionized Impurity Scattering	p. 235
Polar-Optical Phonon Scattering	p. 236
Piezoelectric Scattering	p. 239
Acoustic Phonon Scattering	p. 239
Alloy Scattering	p. 242
The Hall Factor	p. 248
Other Methods Used for Calculating the Mobility in n-GaN	p. 249
Measured vis.a vis.Calculated Mobilities in GaN	p. 251
Transport in 2D n-Type GaN	p. 257
Transportinp-Type Ga Nand Al GaN	p. 258
Carrier Transportin InN	p. 260
Carrier Transportin AlN	p. 262
Transport in Unintensionally-Doped and High-Resistivity GaN	p. 263
Observation	p. 266
The p-n Junction	p. 267
Heterojunctions	p. 267
Band Discontinuities	p. 268
GaN/AlN Heterostructures	p. 270
GaN/In Nand AlN/InN	p. 271
Electrostatic Characteristicsofp-n Heterojunctions	p. 275
Current-Voltage Characteristicsonp-n Junctions	p. 278
Generation-Recombination Current	p. 279
Surface Effects	p. 282
Diode Current Under Reverse Bias	p. 284
Effectof the Electric Field onthe Generation Current	p. 284
Diffusion Current	p. 285
Diode Current Under Forward Bias	p. 287
Calculation and Experimental I-V Characteristics of GaN Basedp-n Juctions	p. 288
Concluding Remarks	p. 294
Optical Processes in Nitride Semiconductors	p. 295
Absorption and Emission	p. 296
Band-to-Band Transitions	p. 300
Excitonuc Transitions	p. 302
Optical Transitionsin GaN	p. 303
Excitonic Transitions in GaN	p. 303
Free Excitons	p. 303
Bound Excitons	p. 317
Exciton Recombination Dynamics	p. 318
High Injection Levels	p. 322
Free-to-Bound Transitions	p. 322
Donor-Acceptor Transitions	p. 323
Defect-Related Transitions	p. 326
Yellow Luminescence	p. 326
Group-II Element Related Transitions	p. 329
Optical Properties of Nitride Heterostructures	p. 331
GaN/Al GaN Heterostructures	p. 332
In GaN/Ga Nand In GaN/In GaN Heterostructures	p. 336
Light-Emitting Diodes	p. 340
Current-Conduction Mechanism in LED-Like Structures	p. 341
Optical Output Power	p. 344
Losses and Efficiency	p. 345
Visible-Light Emitting Diodes	p. 350
Nitride LED Performance	p. 352
Onthe Natureof Light Emissionin Nitride-Based LEDs	p. 360
Pressure Dependence of Spectra	p. 360
Current and Temperature Dependence of Spectra	p. 363
I-V Characteristics of Nitride LEDs	p. 366
LED Degradation	p. 370
Luminescence Conversion and White- Light Generation With Nitride LEDs	p. 373
Organic LEDs	p. 376
Semiconductor Lasers	p. 379
A Primertothe Principlesof Lasers	p. 381
Fundamentals of Semiconductor Lasers	p. 382
Waveguiding	p. 389
Analytical Solution to the Waveguide Problem	p. 390
Numerical Solutionof the Waveguide Problem	p. 394
Far-Field Pattern	p. 402
Lossand Threshold	p. 405
Optical Gain	p. 406
Gainin Bulk Layers	p. 407
Gainin Quantum Wells	p. 410
Coulombic Effects	p. 413
Gain Calculationsfor GaN	p. 417
Optical Gainin Bulk GaN	p. 418
Gainin GaN Quantum Wells	p. 419
Gain Calculations in Wz GaN QW Without Strain	p. 419
Gain Calculations in WZ QW With Strain	p. 420
Gain in ZB QW Structures Without Strain	p. 423
Gain in ZB QW Structures with Strain	p. 424
Pathways Through Excitons and Localized States	p. 425
Measurement of Gain in Nitrides	p. 431
Gain Measurementvia Optical Pumping	p. 431
Gain Measurement via Electrical Injection (Pump)andan Optical Probe	p. 437
Threshold Current	p. 439
Analysis of Injection Lasers with Simplifying Assumptions	p. 440
Recombination Lifetime	p. 442
Quantum Efficiency	p. 448
Gain Spectraof In GaN Injection Lasers	p. 450
Observations	p. 456
A Succinct Reviewofthe Laser Evolutionin Nitrides	p. 457
References	p. 461
Subject Index	p. 485
Table of Contents provided by Publisher. All Rights Reserved.

Springer Materials Science

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