Springer Advanced Microelectronics

VLSI MOSFET Applications

By: Howard Huff (Editor), David Gilmer (Editor)

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Paperback | 21 October 2010

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736 Pages

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23.39 x 15.6 x 3.73

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Classical Regime for SiO.- Brief Notes on the History of Gate Dielectrics in MOS Devices.- SiO2 Based MOSFETS: Film Growth and Si-SiO2 Interface Properties.- Oxide Reliability Issues.- The Economic Implications of Moore's Law.- Transition to Silicon Oxynitrides.- Gate Dielectric Scaling to 2.0-1.0 nm: SiO2 and Silicon Oxynitride.- Optimal Scaling Methodologies and Transistor Performance.- Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation.- Transition to High-k Gate Dielectrics.- Alternative Dielectrics for Silicon-Based Transistors: Selection Via Multiple Criteria.- Materials Issues for High-k Gate Dielectric Selection and Integration.- Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks.- Electronic Structure of Alternative High-k Dielectrics.- Physicochemical Properties of Selected 4d, 5d, and Rare Earth Metals in Silicon.- High-k Gate Dielectric Deposition Technologies.- Issues in Metal Gate Electrode Selection for Bulk CMOS Devices.- CMOS IC Fabrication Issues for High-k Gate Dielectric and Alternate Electrode Materials.- Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films.- Electrical Measurement Issues for Alternative Gate Stack Systems.- High-k Gate Dielectric Materials Integrated Circuit Device Design Issues.- Future Directions for Ultimate Scaling Technology Generations.- High-k Crystalline Gate Dielectrics: A Research Perspective.- High-k Crystalline Gate Dielectrics: An IC Manufacturer's Perspective.- Advanced MOS-Devices.

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