Software Engineering; 4

Modeling, Simulation, and Parameter Extraction

By: Juin Jei Liou, Adelmo Ortiz-Conde, Francisco Garcia-Sanchez

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Hardcover | 30 September 1998

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372 Pages

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24.77 x 16.51 x 2.54

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Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers.
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

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Preface
MOSFET physics and modeling	p. 1
MOSFET simulation using device simulators	p. 109
Extraction of the threshold voltage of MOSFETs	p. 163
Methods for extracting the effective channel length of MOSFETs	p. 203
Extraction of the source and drain series resistances of MOSFETs	p. 257
Parameter extraction of lightly-doped drain (LDD) MOSFETs	p. 291
Physical constants and unit conversions	p. 327
Properties of germanium, silicon, and gallium arsenide (at 300 K)	p. 329
Properties of SiO[subscript 2] and Si[subscript 3]N[subscript 4] (at 300 K)	p. 331
Derivation of the integral function and its applications to parameter extraction	p. 333
Subject index	p. 341
About the authors	p. 347
Table of Contents provided by Blackwell. All Rights Reserved.

Software Engineering; 4

Modeling, Simulation, and Parameter Extraction

At a Glance

Hardcover

Shipping

How to return your order

Defective items

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