| Materials Research Society Symposium Proceedings | |
| Bulk Material and Characterization | |
| Bulk Growth of SiC | p. 3 |
| Alternative Routes to Porous Silicon Carbide | p. 15 |
| Influence of Crystal Growth Conditions on Nitrogen Incorporation During PVT Growth of SiC | p. 23 |
| High-Resolution Photoinduced Transient Spectroscopy of Defect Centers in Undoped Semi-Insulating 6H-SiC | p. 33 |
| Studies of c-Axis Threading Screw Dislocations in Hexagonal SiC | p. 45 |
| Links Between Etching Grooves of Partial Dislocations and Their Characteristics Determined by TEM in 4H SiC | p. 53 |
| Point Defects in SiC | p. 65 |
| Determination of the Core-Structure of Shockley Partial Dislocations in 4H-SiC | p. 77 |
| Propagation and Density Reduction of Threading Dislocations in SiC Crystals During Sublimation Growth | p. 83 |
| Deep-Level Defects in Nitrogen-Doped 6H-SiC Grown by PVT Method | p. 89 |
| Stress Mapping of SiC Wafers by Synchrotron White Beam X-ray Reticulography | p. 95 |
| Effect of Annealing Temperature on SiC Wafer Bow and Warp | p. 101 |
| Epitaxial Material and Characterization | |
| Residual Stress in CVD-Grown 3C-SiC Films on Si Substrates | p. 109 |
| Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices | p. 115 |
| Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-Loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy | p. 123 |
| Suitability of 4H-SiC Homoepitaxy for the Production and Development of Power Devices | p. 129 |
| Improved SiC Epitaxial Material for Bipolar Applications | p. 141 |
| Lateral/Vertical Homoepitaxial Growth on 4H-SiC Surfaces Controlled by Dislocations | p. 151 |
| Factors Influencing the Growth Rate, Doping, and Surface Morphology of the Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H SiC with HCl Additive | p. 157 |
| Observation of Asymmetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates | p. 163 |
| Epitaxial Growth on 2[degrees] Off-axis 4H SiC Substrates with Addition of HCl | p. 169 |
| High-Frequency Electron Paramagnetic Resonance Study of the As-Deposited and Annealed Carbon-Rich Hydrogenated Amorphous Silicon-Carbon Films | p. 175 |
| Characterization and Growth Mechanism of B[subscript 12]As[subscript 2] Epitaxial Layers Grown on (1-100) 15R-SiC | p. 181 |
| Device Processing and Characterization | |
| Simultaneous Formation of n- and p-Type Ohmic Contacts to 4H-SiC Using the Binary Ni/Al System | p. 189 |
| Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS Diodes | p. 195 |
| Performance of SiC Microwave Transistors in Power Amplifiers | p. 203 |
| Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500[degrees]C | p. 209 |
| Effect of SiC Power DMOSFET Threshold-Voltage Instability | p. 215 |
| SiC-Based Power Converters | p. 221 |
| 3D Thermal Stress Models for Single Chip SiC Power Sub-Modules | p. 233 |
| MOS Capacitor Characteristics of 3C-SiC Films Deposited on Si Substrates at 1270[degrees]C | p. 239 |
| Impact Ionization in Ion Implanted 4H-SiC Photodiodes | p. 245 |
| Degradation of Majority Carrier Conductions and Blocking Capabilities in 4H-SiC High Voltage Devices Due to Basal Plane Dislocations | p. 251 |
| Effective Channel Mobility in Epitaxial and Implanted 4H-SiC Lateral MOSFETs | p. 257 |
| Spontaneous and Piezoelectric Polarization Effects on the Frequency Response of Wurtzite Aluminium Gallium Nitride/Silicon Carbide Heterojunction Bipolar Transistors | p. 263 |
| Effect of Base Impurity Concentration on DC Characteristics of Double Ion Implanted 4H-SiC BJTs | p. 269 |
| Correlation Between the V-I Characteristics of (0001) 4H-SiC PN Junctions Having Different Structural Features and Synchrotron X-ray Topography | p. 273 |
| Author Index | p. 279 |
| Subject Index | p. 283 |
| Table of Contents provided by Blackwell. All Rights Reserved. |
