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Nonvolatile Memory Design : Magnetic, Resistive, and Phase Change - Hai Li

Nonvolatile Memory Design

Magnetic, Resistive, and Phase Change

By: Hai Li, Yiran Chen

eText | 19 December 2017 | Edition Number 1

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The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

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Non-FictionComputing & I.T.Computer ScienceSystems Analysis & DesignEngineering & TechnologyElectronics & Communications EngineeringElectronics EngineeringCircuits & ComponentsEnergy Technology & EngineeringElectrical EngineeringEnvironmental ScienceInformation Technology General Issue

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Paperback

Published: 29th March 2017

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