| List of contributors | p. xii |
| Preface | p. xiii |
| Epitaxial Growth of Semiconductors | p. 1 |
| Introduction | p. 1 |
| Epitaxial Growth Techniques | p. 3 |
| Molecular-beam Epitaxy | p. 3 |
| Vapour-phase Epitaxy | p. 6 |
| Molecular-beam Epitaxy with Heteroatomic Precursors | p. 7 |
| Epitaxial Growth Modes | p. 8 |
| In Situ Observation of Growth Kinetics and Surface Morphology | p. 10 |
| Reflection High-energy Electron Diffraction | p. 11 |
| Scanning Tunnelling Microscopy | p. 12 |
| Atomic Force Microscopy | p. 13 |
| Atomistic Processes during Homoepitaxy | p. 16 |
| Growth Kinetics on Vicinal GaAs(001) | p. 16 |
| Anisotropic Growth and Surface Reconstructions | p. 19 |
| Vicinal GaAs(001) | p. 19 |
| Vicinal Si(001) | p. 21 |
| Models of Homoepitaxial Kinetics | p. 23 |
| The Theory of Burton, Cabrera and Frank | p. 23 |
| Homogeneous Rate Equations | p. 24 |
| Multilayer Growth on Singular Surfaces | p. 27 |
| Mechanisms of Heteroepitaxial Growth | p. 29 |
| Kinetics and Equilibrium with Misfit Strain | p. 29 |
| The Frenkel-Kontorova Model | p. 30 |
| Direct Growth of Quantum Heterostructures | p. 32 |
| Quantum Wells and Quantum-well Superlattices | p. 33 |
| Quantum Wire Superlattices | p. 34 |
| Self-organized Quantum Dots | p. 37 |
| Stranski-Krastanov Growth of InAs on GaAs(001) | p. 38 |
| Controlled Positioning of Quantum Dots | p. 40 |
| Ge 'Hut' Clusters on Si(001) | p. 40 |
| Growth on Patterned Substrates | p. 42 |
| Selective Area Growth | p. 43 |
| Quantum Wires on 'V-Grooved' Surfaces | p. 43 |
| Stranski--Krastanov Growth on Patterned Substrates | p. 44 |
| Future Directions | p. 46 |
| Exercises | p. 47 |
| References | p. 51 |
| Electrons in Quantum Semiconductor Structures: An Introduction | p. 56 |
| Introduction | p. 56 |
| Ideal Low-dimensional Systems | p. 57 |
| Free Electrons in Three Dimensions: A Review | p. 57 |
| Ideal Two-dimensional Electron Gas | p. 58 |
| Ideal Zero- and One-dimensional Electron Gases | p. 60 |
| Quantum Wells, Wires, and Dots | p. 61 |
| Real Electron Gases: Single Particle Models | p. 61 |
| Ideal Square Well | p. 62 |
| Some Generalizations | p. 65 |
| Holes in Quantum Wells | p. 65 |
| Non-parabolicity | p. 65 |
| Finite Quantum Wells and Real Systems | p. 66 |
| Interface Effects | p. 70 |
| Effective Mass for Parallel Transport | p. 70 |
| Effective-mass Correction to Conduction-band Discontinuities | p. 71 |
| Quantum Wires | p. 73 |
| Quantum Point Contacts | p. 74 |
| Quantum Dots | p. 75 |
| Exercises | p. 76 |
| References | p. 77 |
| Electrons in Quantum Semiconductors Structures: More Advanced Systems and Methods | p. 79 |
| Introduction | p. 79 |
| Many-body Effects | p. 79 |
| The Hartree Approximation | p. 79 |
| Beyond the Hartree Approximation | p. 81 |
| The 2DEG at a Heterojunction Interface | p. 82 |
| The Ideal Heterojunction | p. 85 |
| Some Calculational Methods | p. 86 |
| The WKB Approximation | p. 87 |
| The 2DEG in Doping Wells | p. 90 |
| The Delta Well (Spike Doping) | p. 93 |
| The Thomas--Fermi Approximation for Two-dimensional Systems | p. 95 |
| The Thomas--Fermi Approximation for Heterojunctions and Delta Wells | p. 96 |
| Quantum Wires and Quantum Dots | p. 97 |
| Quantum Point Contacts and Quantized Conductance Steps | p. 97 |
| A Closer Look at Quantum Dots | p. 101 |
| The Coulomb Blockade and Single-electron Transistors | p. 104 |
| Superlattices | p. 106 |
| Superlattices and Multi-quantum-wells | p. 107 |
| Miniband Properties: The WKB Approximation | p. 109 |
| Doping Superlattices | p. 112 |
| Delta-Doped n-i-p-is | p. 114 |
| Compositional and Doping Superlattices | p. 115 |
| Other Types of Superlattices | p. 116 |
| Exercises | p. 118 |
| References | p. 122 |
| Phonons in Low-dimensional Semiconductor Structures | p. 123 |
| Introduction | p. 123 |
| Phonons in Heterostructures | p. 124 |
| Superlattices | p. 125 |
| Mesoscopic Phonon Phenomena | p. 131 |
| Electron--Phonon Interactions in Heterostructures | p. 135 |
| Conclusion | p. 144 |
| Exercises | p. 145 |
| References | p. 147 |
| Localization and Quantum Transport | p. 149 |
| Introduction | p. 149 |
| Localization | p. 151 |
| Percolation | p. 151 |
| The Anderson Transition and the Mobility Edge | p. 151 |
| Variable Range Hopping | p. 154 |
| Minimum Metallic Conductivity | p. 154 |
| Scaling Theory and Quantum Interference | p. 155 |
| The Gang of Four | p. 155 |
| Experiments on Weak Localization | p. 157 |
| Quantum Interference | p. 158 |
| Negative Magnetoresistance | p. 159 |
| Single Rings and Non-local Transport | p. 160 |
| Spin--orbit Coupling, Magnetic Impurities, etc. | p. 163 |
| Universal Conductance Fluctuations | p. 163 |
| Ballistic Transport | p. 163 |
| Interaction Effects | p. 164 |
| The In T Correction | p. 164 |
| Wigner Crystallization | p. 164 |
| The Quantum Hall Effect | p. 165 |
| General | p. 165 |
| The Quantum Hall Effect Measurements | p. 168 |
| The Semiclassical Theory | p. 170 |
| The Fractional Quantum Hall Effect | p. 172 |
| Exercises | p. 175 |
| References | p. 178 |
| Electronic States and Optical Properties of Quantum Wells | p. 180 |
| Introduction | p. 180 |
| The Envelope Function Scheme | p. 183 |
| The Parabolic Band Model | p. 187 |
| Effects of Band Mixing | p. 192 |
| Light Particle Band Non-parabolicity | p. 192 |
| Valence Band Non-parabolicity | p. 193 |
| Multiple Well Effects | p. 194 |
| Effects of the Coulomb Interaction | p. 197 |
| Excitons in Bulk Semiconductors | p. 197 |
| Excitons in Quantum Wells | p. 198 |
| Effects of Applied Bias | p. 201 |
| Optical Absorption in a Quantum Well | p. 205 |
| Optical Characterization | p. 209 |
| Measurement of Absorption | p. 209 |
| Features of Optical Spectra | p. 211 |
| Band Non-parabolicity | p. 211 |
| Valence Band Mixing | p. 212 |
| Interwell Coupling | p. 214 |
| Electric Field | p. 214 |
| Quantum-well Solar Cells | p. 215 |
| Photoconversion | p. 215 |
| Basic Principles | p. 217 |
| Photocurrent | p. 217 |
| Recombination Current | p. 221 |
| Carrier Escape | p. 221 |
| Concluding Remarks | p. 222 |
| Exercises | p. 222 |
| References | p. 225 |
| Non-Linear Optics in Low-dimensional Semiconductors | p. 227 |
| Introduction | p. 227 |
| Non-dissipative NLO Processes | p. 229 |
| Dissipative NLO Effects | p. 231 |
| Potential Applications of NLO | p. 232 |
| Serial Channel Applications | p. 232 |
| Multi-channel Applications: Optical Computing | p. 233 |
| Excitonic Optical Saturation in MQWs | p. 234 |
| Excitonic Absorption at Low Intensities | p. 234 |
| Saturation of Excitonic Peaks at High Intensities | p. 237 |
| The Quantum Confined Stark Effect | p. 239 |
| Doping Superlattices ('n-i-p-i' Crystals) | p. 242 |
| Hetero--n-i-p-i Structures | p. 246 |
| Band Filling Effects in Hetero--n-i-p-is | p. 247 |
| The QCSE in Hetero--n-i-p-is | p. 249 |
| Concluding Remarks | p. 254 |
| Exercises | p. 255 |
| References | p. 257 |
| Semiconductor Lasers | p. 260 |
| Introduction | p. 260 |
| Basic Laser Theory | p. 262 |
| Laser Threshold | p. 265 |
| Threshold Current Density | p. 267 |
| Power Output | p. 270 |
| Fundamental Gain Calculations | p. 272 |
| Electronic Band Structure and Densities of States | p. 272 |
| Carrier Density and Inversion | p. 274 |
| Gain Expression | p. 276 |
| Optical Gain in 2D and 3D Active Regions | p. 277 |
| Strained Layers | p. 280 |
| Optical Interband Matrix Element | p. 284 |
| Some other Laser Geometries | p. 286 |
| Exercises | p. 292 |
| References | p. 294 |
| Mesoscopic Devices | p. 296 |
| Introduction | p. 296 |
| Quantum Interference Transistors | p. 297 |
| Quantum Interference and Negative Magnetoresistance | p. 297 |
| The Aharanov--Bohm Effect | p. 303 |
| Universal Conductance Fluctuations | p. 306 |
| Quantum Interference Transistors | p. 309 |
| The Gated Ring Interferometer | p. 310 |
| The Stub Tuner | p. 311 |
| Problems with Quantum Interference Transistors | p. 311 |
| Ballistic Electron Devices | p. 314 |
| Electron Transmission and the Landauer--Buttiker Formula | p. 315 |
| Quantized Conductance in Ballistic Point Contacts | p. 316 |
| Multi-terminal Devices | p. 318 |
| The Negative Bend Resistance | p. 318 |
| Quenching of the Hall Effect | p. 319 |
| Possible Applications of Ballistic Electron Devices | p. 320 |
| Boundary Scattering in Ballistic Structures | p. 323 |
| Quantum Dot Resonant Tunnelling Devices | p. 325 |
| Resonant Tunnelling through Quantum Wells | p. 326 |
| Resonant Tunnelling through Quantum Dots | p. 328 |
| Gated Resonant Tunnelling through Quantum Dots | p. 329 |
| Coulomb Blockade and Single-electron Transistors | p. 331 |
| Coulomb Blockade in the Current-biassed Single Junction | p. 332 |
| Coulomb Blockade in Double Junctions | p. 334 |
| Necessary Conditions for Efficient Coulomb Blockade | p. 335 |
| Single-electron Transistors | p. 335 |
| Co-tunnelling and Multiple Tunnel Junctions | p. 339 |
| Possible Applications of Single-electron Transistors | p. 340 |
| The Future of Mesoscopic Devices | p. 342 |
| Exercises | p. 343 |
| References | p. 345 |
| High-speed Heterostructure Devices | p. 348 |
| Introduction | p. 348 |
| Field-effect Transistors | p. 349 |
| The Si MOSFET | p. 349 |
| GaAs/AlGaAs High-electron-mobility Transistor | p. 355 |
| InGaAs HEMTs | p. 358 |
| Delta-doped FETs | p. 361 |
| Vertical Transport Devices | p. 363 |
| Unipolar Diodes | p. 364 |
| Hot-electron Devices | p. 365 |
| Resonant Tunnelling Structures | p. 367 |
| Superlattice Devices | p. 370 |
| Heterojunction Bipolar Transistors | p. 372 |
| Conclusions | p. 375 |
| Exercises | p. 375 |
| References | p. 377 |
| Solutions to Selected Exercises | p. 379 |
| Index | p. 387 |
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