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Technology CAD -- Computer Simulation of IC Processes and Devices : The Springer International Engineering and Computer Science - Robert W. Dutton

Technology CAD -- Computer Simulation of IC Processes and Devices

The Springer International Engineering and Computer Science

Hardcover Published: 31st July 1993
ISBN: 9780792393795
Number Of Pages: 373

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The rapid evolution and explosive growth of integrated circuit technology have impacted society more than any other technological development of the 20th century. Integrated circuits (ICs) are used universally and the expanding use of IC technology requires more accurate circuit analysis methods and tools, prompting the introduction of computers into the design process. The goal of this book is to build a firm foundation in the use of computer-assisted techniques for IC device and process design. Both practical and analytical viewpoints are stressed to give the reader the background necessary to appreciate CAD tools and to feel comfortable with their use.
Technology CAD - Computer Simulation of IC Processes and Devices presents a unified discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Chapter 1 focuses on the motivation for coupled process and device CAD. In Chapter 2 SUPREM III is introduced, and process CAD is discussed in terms of ion-implantation, impurity diffusion, and oxidation models. Chapter 3 introduces the Stanford device analysis program SEDAN III (SEmiconductor Device ANalysis). The next three chapters move into greater detail concerning device operating principles and analysis techniques. Chapter 4 reviews the classical formulation of pn junction theory and uses device analysis (SEDAN) both to evaluate some of the classical assumptions and to investigate the difficult problem of high level injection. Chapter 5 returns to MOS devices, reviews the first-order MOS theory, and introduces some important second-order effects. Chapter 6 considers the bipolar transistor. Chapter 7 considers the application of process simulation and device analysis to technology design. The BiCMOS process is selected as a useful design vehicle for two reasons. First, it allows the reader to pull together concepts from the entire book. Second, the inherent nature of BiCMOS technology offers real constraints and hence trade-offs which must be understood and accounted for.

Technology-Oriented CADp. 1
Process and Device CADp. 5
Process Simulation Techniquesp. 11
Interfaces in Process and Device CADp. 16
CMOS Technologyp. 21
Introduction to SUPREMp. 37
Ion Implantationp. 43
Oxidationp. 53
Impurity Diffusionp. 65
Device CADp. 87
Semiconductor Device Analysisp. 90
Field-Effect Structuresp. 98
Bipolar Junction Structuresp. 109
PN Junctionsp. 131
Carrier Densities: Equilibrium Casep. 132
Non-Equilibriump. 139
Carrier Transport and Conservationp. 144
The pn Junction - Equilibrium Conditionsp. 147
The pn Junction - Non-equilibriump. 155
SEDAN Analysisp. 166
MOS Structuresp. 197
The MOS Capacitorp. 198
Basic MOSFET I-V Characteristicsp. 208
Threshold Voltage in Nonuniform Substratep. 217
MOS Device Design by Simulationp. 224
Bipolar Transistorsp. 243
Lateral pnp Transistor Operationp. 245
Transport Current Analysisp. 252
Generalized Charge Storage Modelp. 260
Transistor Equivalent Circuitsp. 267
Second Order Effectsp. 274
Transit Time and Cutoff Frequencyp. 282
Application of Simulation Toolsp. 288
BiCMOS Technologyp. 295
Triple-Diffused BiCMOSp. 296
Buried-Epitaxial Layer BiCMOSp. 302
A. Numerical Analysisp. 317
Discretizationp. 319
Newton Method and Convergence Issuesp. 329
Device Parameter Computationp. 332
B. BiCMOS Technology Overviewp. 337
System Needs of the Technologyp. 337
Overview of the Stanford BiCMOS Processp. 340
Development of BiCMOS Processp. 341
Electrical Characteristicsp. 350
C. Templates for PISCES Simulationp. 355
1D BJTp. 356
MOS Capacitorsp. 365
Indexp. 370
Table of Contents provided by Blackwell. All Rights Reserved.

ISBN: 9780792393795
ISBN-10: 0792393791
Series: The Springer International Engineering and Computer Science
Audience: General
Format: Hardcover
Language: English
Number Of Pages: 373
Published: 31st July 1993
Country of Publication: US
Dimensions (cm): 23.39 x 15.6  x 2.24
Weight (kg): 0.73

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