Springer Surface Sciences

By: Winfried Mönch

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Hardcover | 10 April 2001 | Edition Number 3

At a Glance

Hardcover
572 Pages

Edition Type
Revised

Dimensions(cm)
24.77 x 16.51 x 2.54

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Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-induced surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts. Where available, results of more refined calculations are considered. This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.

Industry Reviews

From the reviews of the third edition:

"The monograph covers comprehensively experimental and theoretical methods to study semiconductor surfaces and interfaces. These research topics include aspects of physics, chemistry as well as of electronic devices, and are a very rapidly developing scientific area. The book includes more than 1500 references and is divided into nineteen chapters. The book is the third revised edition ... ." (I. A. Parinov, Zentralblatt MATH, Vol. 994 (19), 2002)

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You Can Find This Book In

Non-Fiction Engineering & Technology Electronics & Communications Engineering Electronics Engineering Electronic Devices & Materials Semi-Conductors & Super-Conductors Science Physics Materials & States of Matter Medicine Medicine in General Chemistry

Physical Chemistry Surface Chemistry & Adsorption Electricity Mechanical Engineering & Materials Materials Science Testing of Materials

Introduction	p. 1
Historical Remarks	p. 1
Surface Space-Charge and Surface States: Some Preliminary Remarks	p. 13
Surface Space-Charge Region in Thermal Equilibrium	p. 21
Solutions of Poisson's Equation	p. 21
Surface Space-Charge	p. 25
Shape of Surface Barriers	p. 27
Comparison of Space-Charge Layers at Semiconductor and Metal Surfaces	p. 28
Quantum Size-Effects in Space-Charge Layers	p. 28
Surface States	p. 33
Virtual Gap States of the Complex Band Structure	p. 33
Intrinsic Surface States: Nearly Free Electron Model	p. 36
Intrinsic Surface States: Tight-Binding Approximation	p. 44
Dangling Bonds	p. 47
Adatom-Induced Surface States: Tight-Binding Approach	p. 51
Adatom-Induced Surface Dipoles: Electronegativity Concept	p. 53
Adatom-Induced Surface States and Dipoles: ViGS Model	p. 56
Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium	p. 59
Surface Space-Charge Region in Non-Equilibrium	p. 67
Surface Photovoltage	p. 67
Dember Effect	p. 73
Surface Transport	p. 74
Surface Excess of Carriers	p. 74
Surface Conductance	p. 76
Surface Mobility	p. 76
Field Effect of Surface Conductance	p. 78
Interface States	p. 81
Metal-Semiconductor Contacts: Metal-Induced Gap States	p. 81
MIGS-and-Electronegativity Model of Metal-Semiconductor Contacts	p. 86
Slope Parameters of Barrier Heights in Schottky Contacts	p. 91
Defects at Metal-Semiconductor Interfaces	p. 93
Band Lineup in Semiconductor Heterostructures: IFIGS-and-Electronegativity Model	p. 96
Band Lineup at Semiconductor Heterostructures: Tight-Binding Approach	p. 98
Historical Notes	p. 100
Cleaved {110} Surfaces of III-V and II-VI Compound Semiconductors	p. 105
Ionicity and Core-Level Spectroscopy of Compound Semiconductors	p. 105
Layer Model of Photoemitted Electrons	p. 105
Charge Transfer in the Bulk of Compound Semiconductors	p. 109
Surface Core-Level Shifts	p. 112
Geometrical Surface Structure	p. 114
Surface Phonons	p. 122
Electronic Surface States	p. 128
Intrinsic Versus Extrinsic Surface States	p. 128
Cleavage-Induced Surface States: InAs(110) as an Example	p. 131
Intrinsic Surface States	p. 133
Temperature Dependence of the Ionization Energy	p. 137
Chemical Trends of the Ionization Energy	p. 140
{100} Surfaces of III-V, II-VI, and I-VII Compound Semiconductors with Zincblende Structure	p. 145
Reconstructions and Trends in Chemical Compositions	p. 145
Dimerization	p. 150
Missing Dimer Structures	p. 153
Dimerization, Occupation of Dangling Bonds, and Electron Counting	p. 161
Intrinsic Surface Band Structure	p. 166
Fermi-Level Pinning by Extrinsic Surface States	p. 167
Ionization Energy	p. 168
{100} Surfaces of Diamond, Silicon, Germanium, and Cubic Silicon Carbide	p. 169
Atomic Arrangement	p. 169
Strain Effects on Si(001) Surfaces	p. 175
Electronic Surface Properties	p. 177
Surface Core-Level Shifts	p. 181
Reversible <$>2 \times 1 \rightleftharpoons {\rm c} (4 \times 2)<$> Surface Phase Transition	p. 183
ß-SiC(001) Surfaces	p. 186
Diamond, Silicon, and Germanium {111}-2 × 1 Surfaces	p. 193
Cleaved Silicon and Germanium Surfaces	p. 194
Early Models of (111)-2 × 1 Reconstructions and Core-Level Shifts	p. 194
Band Structure of Dangling-Bond Surface States: Experimental Data	p. 197
Surface Band Gap	p. 202
Tilted Chains	p. 206
Band Structure of Dangling-Bond Surface States: Theoretical Results	p. 213
Clean Diamond {111} Surfaces	p. 213
Atomic Arrangement	p. 213
Electronic Properties	p. 215
Clean Diamond and Cleaved Silicon and Germanium {111} Surfaces in Comparison	p. 217
Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces	p. 219
Preparation of Clean Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces	p. 219
Si(111)-7 × 7: Atomic Arrangement	p. 221
Elements of the 7 × 7 Reconstruction on Si(111) Surfaces	p. 221
Dimer-Adatom-Stacking Fault Model	p. 225
Ge(111)-c(2 × 8): Atomic Arrangement	p. 229
Electronic Structure of Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces	p. 232
Electronic Band Structure	p. 232
Core-Level Spectroscopy	p. 234
Energetics of Reconstructions on {111} Surfaces of Si and Ge: 7 × 7 Versus c(2 × 8)	p. 237
Phase Transitions on Silicon and Germanium {111} Surfaces	p. 241
<$>{\rm Si}(111)-7 \times 7 \rightleftharpoons "1 \times 1"<$> and <$>{\rm Ge}(111)-{\rm c}(2 \times 8) \rightleftharpoons "1 \times 1"<$> Phase Transitions	p. 241
Ge(111)-"1 × 1" High-Temperature Phase Transition	p. 246
Irreversible Conversion of 2 × 1 Reconstructions on Cleaved Si and Ge Surfaces	p. 247
{111} Surfaces of Compounds with Zincblende Structure	p. 255
[111]-Oriented Surfaces	p. 255
<$>\overline {[111]}<$>-Oriented Surfaces	p. 257
Monovalent Adatoms	p. 263
Adsorption of Halogens	p. 263
Dissociative Adsorption	p. 263
Bond Lengths and Adsorption Sites	p. 269
Adsorption of Hydrogen	p. 272
Si(001):H Surfaces	p. 272
Si(111):H-¿(7 × 7) Surfaces	p. 275
Si(111)- and Ge(111):H-1 × 1 Surfaces	p. 276
Alkali and Silver Adatoms on Si{100} Surfaces	p. 280
Monovalent Metal Adatoms on Si and Ge {111} Surfaces	p. 283
Alkali Adatoms on Si(111)-7 × 7 Surfaces	p. 283
Si(111):Ag- and Ge(111):<$>{\rm Ag}-(\sqrt {3} \times \sqrt {3})<$>R30° Structures	p. 284
Si(111):Au- and Ge(111):<$>{\rm Au}-(\sqrt {3} \times \sqrt {3})<$>R30° Structures	p. 287
3 × 1 Reconstructions Induced by Alkali and Silver Adatoms on Si (111) Surfaces	p. 288
Growth Kinetics of Metals on Cleaved GaAs(110) Surfaces	p. 291
Adatom-Induced Surface Core-Level Shifts	p. 300
Adatom-Induced Surface Dipoles	p. 307
Mutual Interactions in Plane Arrays of Surface Dipoles	p. 307
Surface Dipoles Induced by Alkali Adatoms	p. 309
Hydrogen-Induced Surface Dipoles	p. 311
Adatom-Induced Surface States	p. 316
Cesium Adatoms on Cleaved Si Surfaces	p. 316
Metal Adatoms on GaAs(110) Surfaces	p. 317
Nonmetal Adatoms on GaAs(110) Surfaces	p. 324
Group-III Adatoms on Silicon Surfaces	p. 329
Si(111):III-(<$>\sqrt {3} \times \sqrt {3}<$>)R30° Reconstructions	p. 329
Al-, Ga-, and In-Induced (<$>\sqrt {3} \times \sqrt {3}<$>)R30° Reconstructions	p. 330
B-Induced <$>(\sqrt {3} \times \sqrt {3}<$>)R30° Reconstruction	p. 333
Reconstructions Induced by Group-III Adatoms on {100} Surfaces of Si and Ge	p. 334
Group-V Adatoms	p. 339
Si(111):As-1 × 1 and Si(001):As- and Si(001):Sb-2 × 1 Surfaces	p. 339
Sb- and Bi-induced (<$>\sqrt {3} \times \sqrt {3}<$>)R30° Structures on Si and Ge(111) Surfaces	p. 343
GaP-, GaAs-, and InP(110):Sb-1 × 1 Surfaces	p. 347
III-V(110):Bi-1 × 1 Surfaces	p. 350
Oxidation of Silicon and III-V Compound Semiconductors	p. 353
Si111 Surfaces	p. 353
Precursor-Mediated Chemisorption on Si(111)-7 × 7 Surfaces	p. 354
Oxygen-Induced Si(2p) Core-Level Shifts	p. 361
Field-Assisted Oxidation	p. 364
III-V Compound Semiconductors	p. 366
Oxidation Kinetics on GaAs(110) Surfaces	p. 367
Photon-Stimulated Oxidation	p. 371
Core-Level Spectroscopy: Growth Mode and Composition of Oxide Films	p. 372
Surface Passivation by Adsorbates and Surfactants	p. 377
Surface Passivation by Hydrogen	p. 377
Surfactant-Mediated Growth	p. 381
Semiconductor Interfaces	p. 385
Metal-Semiconductor Contacts	p. 386
Current Transport Across Metal-Semiconductor Contacts	p. 386
Image-Force Effect	p. 388
Determination of Barrier Heights: A Brief Comparison of Methods	p. 389
Barrier Heights of Real Schottky Contacts	p. 392
Laterally Inhomogeneous Schottky Contacts 1: Circular Patches	p. 400
Laterally Inhomogeneous Schottky Contacts 2: BEEM	p. 402
Laterally Inhomogeneous Schottky Contacts 3: I/V Characteristics	p. 407
The MIGS-and-Electronegativity Concept: Experiment and Theory	p. 411
Direct Observations of MIGS	p. 418
Extrinsic Interface Dipoles 1: Interface Doping	p. 420
Extrinsic Interface Dipoles 2: Metal/Si(111)-(7 × 7)ⁱ Contacts	p. 424
Extrinsic Interface Dipoles 3: Epitaxial Silicide/Silicon Interfaces	p. 427
Origin of Lateral Barrier-Height Inhomogeneities 1: Natural Nonuniformities	p. 434
Origin of Lateral Barrier-Height Inhomogeneities 2: Extrinsic Nonuniformities	p. 435
Slope Parameter	p. 437
Schottky Contacts on Ternary III-V Alloys	p. 439
Temperature and High-Pressure Effects	p. 444
Ohmic Contacts	p. 451
Semiconductor Heterostructures	p. 455
Band-Structure Lineup	p. 455
Interface Dipoles at Polar Interfaces	p. 457
Lattice-Matched Ternary and Quaternary III-V Alloys	p. 461
Pressure and Temperature Dependence of Valence-Band Offsets	p. 467
Pseudomorphic Interfaces	p. 468
Metamorphic Heterostructures	p. 471
Layered Semiconductors	p. 472
Insulator Interfaces	p. 476
Metal-Insulator Contacts	p. 476
Semiconductor-Insulator Interfaces	p. 479
Appendix	p. 483
References	p. 487
Index of Reconstructions and Adsorbates	p. 535
Subject Index	p. 539
Table of Contents provided by Publisher. All Rights Reserved.

Springer Surface Sciences

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Hardcover

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