Part I - Spin-Related Phenomena
Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well
W.R. Branford, A. M. Gilbertson, P. D. Buckle, L. Buckle, T. Ashley, F. Magnus, S.K. Clowes, J.J. Harris, and L. F. Cohen
Photogalvanic Effects in HgTe Quantum Wells
B. Wittmann, S. N. Danilov, Z. D. Kwon, N. N. Mikhailov, S.A. Dvoretsky, R. Ravash, W. Prettl, and S. D. Ganichev
Magnetic and Structural Properties of Ferromagnetic GeMnTe Layers
P. Dziawa, W. Knoff, V. Domukhovski, J. Domagala, R. Jakiela, E. Lusakowska, V. Osinniy, K. Swiatek, B. Taliashvili, and T. Story
Control and Probe of Carrier and Spin Relaxations in InSb Based Structures
G. A. Khodaparast, R. N. Kini, K. Nontapot, M. Frazier, E. C. Wade, J. J. Heremans, S. J. Chung , N. Goel , M. B. Santos , T. Wojtowicz, X. Liu, and J. K. Furdyna
Density and Well-Width Dependence of the Spin Relaxation in
n-InSb/AlInSb Quantum Wells
K. L. Litvinenko, B. N. Murdin, S. K. Clowes, L. Nikzad, J. Allam, C. R. Pidgeon, W. Branford, L. F. Cohen, T. Ashley, and L. Buckle
Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures
H. Nose, S. Sugahara, and H. Munekata
Temperature Dependence of the Electron Lande g-Factor in InSb
C.R. Pidgeon, K.L. Litvinenko, L. Nikzad, J. Allam, L.F. Cohen, T. Ashley, M. Emeny, and B.N. Murdin
Anomalous Spin Splitting of Electrons in InSb type-II Quantum Dots in an InAs Matrix
Ya.V. Terent'ev, O.G. Lyublinskaya, A.A. Toropov, B.Ya. Meltser, A.N. Semenov and S.V. Ivanov
Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling via Weak Anti-Localization in InSb Quantum Wells
A.R. Dedigama, D. Jayathilaka, S.H. Gunawardana, S.Q. Murphy, M. Edirisooriya, N. Goel, T.D. Mishima, and M.B. Santos
Part II - Growth, Fabrication,Characterisation and Theory
Picosecond Carrier Dynamics in Narrow-Gap Semiconductors Studied by Terahertz Radiation Pulses
R. Adomavicius, R. ?ustaviciute, and A. Krotkus
Band Structure of InSbN and GaSbN
A. Lindsay, A.D. Andreev, E. P. O'Reilly, and T. Ashley
Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applications
S. D. Coomber, L. Buckle, P. H. Jefferson, D. Walker, T. D. Veal, C. F. McConville, T. Ashley
Electron Interband Breakdown in a Kane Semiconductor with a Degenerate Hole Distribution
A. V. Dmitriev and A. B. Evlyukhin
InMnAs Quantum Dots: a Raman Spectroscopy Analysis
A. D. Rodrigues, J. C. Galzerani, E. Marega Jr., L. N. Coelho, R.. Magalhães-Paniago, and G. J. Salamo
Conduction Band States in AlP/GaP Quantum Wells
M. Goiran, M..P. Semtsiv, S. Dressler, W. T. Masselink, J. Galibert, G. Fedorov, D. Smirnov, V. V. Rylkov,, and J. Leotin
Growth of InAsSb Quantum Wells by Liquid Phase Epitaxy
M. Yin, A. Krier, and R. Jones
Diode Lasers for Free Space Optical Communications Based on InAsSb/InAsSbP Grown by LPE
M. Yin, A. Krier, P.J. Carrington, R. Jones, and S. E. Krier
Epitaxial Growth and Characterization of PbGeEuTe Layers
V. Osinniy, P. Dziawa, V. Domukhovski, K. Dybko, W. Knoff, T. Radzynski, A. Lusakowski, K. Swiatek, E. Lusakowska, B. Taliashvili, A. Boratynski, and T. Story Monte Carlo Simulation of Electron Transport in PbTe
V. Palankovski, M. Wagner, and W. Heiss
L-Band-Related Interband Transition in InSb/GaSb Self-Assembled
Quantum Dots
S. I. Rybchenko, R. Gupta, I. E. Itskevich, and S. K. Haywood
Antimony Distribution in the InSb/InAs QD Heterostructures
A.N. Semenov, O.G. Lyublinskaya, B.Ya. Meltser, V.A. Solov'ev, L.V. Delendik, and S.V. Ivanov
Transport