| Nonclassical Light | p. 1 |
| Classical Description of Light | p. 1 |
| Quantum Description of Light | p. 2 |
| Coherent State, Squeezed State and Number-Phase Squeezed State | p. 3 |
| Quantum Theory of Photodetection and Sub-Poisson Photon Distribution | p. 4 |
| Quantum Theory of Second-Order Coherence and Photon Antibunching | p. 6 |
| Quantum Theory of Photocurrent Fluctuation and Squeezing | p. 9 |
| Noise of p-n Junction Light Emitters | p. 13 |
| Introduction | p. 13 |
| Junction Voltage Dynamics: the Poisson Equation | p. 14 |
| Semiclassical Langevin Equation for Junction Voltage Dynamics | p. 17 |
| Mesoscopic Case (r ≫ 1) | p. 18 |
| Macroscopic Case (r ≪ 1) | p. 18 |
| Noise Analysis of an LED | p. 20 |
| Steady-State Conditions | p. 22 |
| Linearization | p. 22 |
| Photon-Number Noise | p. 23 |
| Noise in the External Circuit Current | p. 27 |
| Correlation Between Carrier Number and Junction Voltage | p. 28 |
| Correlation Between Photon Flux and Junction Voltage | p. 29 |
| Summary | p. 30 |
| Sub-Poissonian Light Generation in Light-Emitting Diodes | p. 31 |
| Introduction | p. 31 |
| Physical Mechanism of Pump-Noise Suppression | p. 31 |
| Measurement of the Squeezing Bandwidth | p. 33 |
| Summary | p. 39 |
| Amplitude-Squeezed Light Generation in Semiconductor Lasers | p. 41 |
| Introduction | p. 41 |
| Interferometric Measurement of Longitudinal-Mode-Partition Noise | p. 43 |
| Principle | p. 43 |
| Experimental Setup | p. 43 |
| Grating-Feedback External-Cavity Semiconductor Laser | p. 45 |
| Experimental Setup and Procedure | p. 45 |
| Experimental Results | p. 45 |
| Discussion | p. 48 |
| Injection-Locked Semiconductor Laser | p. 48 |
| Experimental Setup and Procedure | p. 48 |
| Experimental Results | p. 49 |
| Discussion | p. 51 |
| Modeling of the Noise of an Injection-Locked Laser | p. 52 |
| Summary | p. 55 |
| Excess Intensity Noise of a Semiconductor Laser with Nonlinear Gain and Loss | p. 57 |
| Introduction | p. 57 |
| Physical Models for Nonlinearity | p. 58 |
| Nonlinear Gain | p. 58 |
| Nonlinear Loss | p. 60 |
| Noise Analysis Using Langevin Rate Equations | p. 61 |
| Numerical Results | p. 63 |
| Numerical Parameters | p. 63 |
| Results | p. 63 |
| Discussion: Effect of Saturable Loss | p. 65 |
| Comparison of Two Laser Structures with Respect to Saturable Loss | p. 69 |
| Estimate of the Loss by Si DX Centers | p. 69 |
| Experimental Verification of the Saturable Loss | p. 71 |
| Explanation for the Excess Noise in QW Lasers | p. 74 |
| Summary | p. 74 |
| Transverse-Junction-Stripe Lasers for Squeezed Light Generation | p. 77 |
| Introduction | p. 77 |
| Fabrication | p. 78 |
| Si Diffusion and Intermixing | p. 78 |
| High V/III Ratio for Sharper Interfaces | p. 79 |
| P Doping by Zn Diffusion | p. 79 |
| Devices | p. 80 |
| DC Characterization: Threshold, Loss and Quantum Efficiency | p. 80 |
| Intensity Noise | p. 81 |
| Influence of High V/III Ratio | p. 81 |
| Optimization of External Coupling Efficiency | p. 83 |
| Polarization-Partition Noise | p. 84 |
| Longitudinal-Mode-Partition Noise | p. 85 |
| Suppressed 1/f Noise | p. 86 |
| Summary | p. 87 |
| Sub-Shot-Noise FM Spectroscopy | p. 89 |
| Introduction | p. 89 |
| Advantages of Semiconductor Lasers | p. 89 |
| Signal to Noise Ratio (SNR) | p. 90 |
| Realization of Sub-Shot-Noise FM Spectroscopy | p. 92 |
| Frequency and Noise Control by Injection Locking | p. 93 |
| Effect of Injection Locking on Intensity Noise | p. 95 |
| Suppression of Residual AM by Injection-Locking | p. 96 |
| Suppression of Residual AM by Dual Pump Current Modulation | p. 98 |
| Expected Lineshape | p. 101 |
| Spectroscopic Setup | p. 103 |
| Experimental Results | p. 104 |
| Future Prospects | p. 105 |
| Sub-Shot-Noise FM Noise Spectroscopy | p. 107 |
| Introduction | p. 107 |
| Principle of FM Noise Spectroscopy | p. 109 |
| Signal-to-Noise Ratio and the Advantage of Amplitude Squeezing | p. 109 |
| Sub-Shot-Noise Spectroscopy | p. 110 |
| Experimental Setup | p. 110 |
| Laser Trapping and Cooling of Rb | p. 111 |
| Expected Optical Transitions in a Magneto-Optic Trap | p. 112 |
| Sample Probing | p. 113 |
| Experimental Result | p. 114 |
| Phase-Sensitive FM Noise Spectroscopy | p. 116 |
| Experimental Setup | p. 116 |
| Experimental Results | p. 118 |
| Summary | p. 121 |
| Sub-Shot-Noise Interferometry | p. 123 |
| Introduction | p. 123 |
| Sensitivity Limit of an Optical Interferometer | p. 124 |
| Amplitude-Squeezed Light Injection in a Dual-Input Mach-Zehnder Interferometer | p. 125 |
| Sub-Shot-Noise Phase Measurement | p. 127 |
| Experimental Procedure | p. 127 |
| Experimental Result | p. 128 |
| Dual-Input Michelson Interferometer | p. 131 |
| Operation Principle | p. 131 |
| Sensitivity of a Dual-Input Michelson Interferometer | p. 133 |
| Sub-Shot-Noise Interferometry | p. 134 |
| Summary and Future Prospects | p. 136 |
| Coulomb Blockade Effect in Mesoscopic p-n Junctions | p. 137 |
| Introduction | p. 137 |
| Calculation of Resonant Tunneling Rates | p. 138 |
| Transmittance of the Barrier | p. 139 |
| Tunneling Matrix Element | p. 140 |
| Electron Tunneling Current Density into the Central QW | p. 142 |
| Effect of Inhomogeneous Broadening | p. 143 |
| Coulomb Blockade Effect on Resonant Tunneling | p. 144 |
| Coulomb Staircase | p. 146 |
| DC Voltage Bias Condition | p. 146 |
| DC + AC Voltage Bias Condition | p. 148 |
| Turnstile Operation | p. 150 |
| Monte-Carlo Simulations | p. 154 |
| Summary | p. 154 |
| Single-Photon Generation in a Single-Photon Turnstile Device | p. 155 |
| Introduction | p. 155 |
| Device Fabrication | p. 155 |
| Wafer Design and Growth | p. 156 |
| Ohmic Contact Formation | p. 157 |
| Device Definition: Electron-Beam Lithography | p. 158 |
| Metal Evaporation and Liftoff | p. 158 |
| Device Isolation: ECR-RIE | p. 160 |
| Surface Passivation | p. 162 |
| Planarization and Top-Contact Evaporation | p. 165 |
| Observation of the Coulomb Staircase | p. 167 |
| Single-Photon Turnstile Device | p. 168 |
| Preliminary Characterization | p. 168 |
| Experimental Setup | p. 170 |
| Electrical Characterization | p. 172 |
| Optical Characterization | p. 174 |
| Summary | p. 177 |
| Single-Photon Detection with Visible-Light Photon Counter | p. 179 |
| Introduction | p. 179 |
| Comparison of Single-Photon Detectors | p. 180 |
| Photomultiplier Tubes (PMTs) | p. 180 |
| Avalanche Photodiodes (APDs) | p. 181 |
| Superconducting Tunnel Junctions (STJs) | p. 182 |
| Solid-State Photomultipliers (SSPMs) and Visible-Light Photon Counters (VLPCs) | p. 183 |
| Operation Principle of a VLPC | p. 183 |
| Single-Photon Detection System Based on a VLPC | p. 184 |
| Quantum Efficiency of a VLPC | p. 186 |
| Theory of Noise in Avalanche Multiplication | p. 191 |
| Excess Noise Factor (ENF) | p. 191 |
| Noise Power Spectral Density of the Multiplied Photocurrent | p. 192 |
| Effect of ENF in the Pulse-Height Distribution | p. 193 |
| Excess Noise Factor of a VLPC | p. 194 |
| Digital Measurement of the Pulse-Height Distribution | p. 195 |
| Analog Noise Power Spectral Density Measurement | p. 196 |
| Two-Photon Detection with a VLPC | p. 198 |
| Twin Photon Generation in Optical Parametric Downconversion | p. 199 |
| Characterization of Two-Photon Detection with VLPC | p. 201 |
| Summary | p. 204 |
| Future Prospects | p. 207 |
| Introduction | p. 207 |
| Regulated and Entangled Photons from a Single Quantum Dot | p. 208 |
| Single-Mode Spontaneous Emission from a Single Quantum Dot in a Three-Dimensional Microcavity | p. 212 |
| Lasing and Squeezing of Exciton-Polaritons in a Semiconductor Microcavity | p. 217 |
| Appendix: Noise and Correlation Spectra for Light-Emitting Diode | p. 221 |
| Linearization | p. 221 |
| LED Photon Noise Spectral Density | p. 222 |
| External Current Noise Spectral Density | p. 223 |
| Junction-Voltage-Carrier-Number Correlation | p. 223 |
| Photon-Flux-Junction-Voltage Correlation | p. 224 |
| References | p. 225 |
| Subject Index | p. 241 |
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