Springer Materials Science

1. UV LEDs-Michael Shur (RPI, email shurm@rpi.edu) 2. Non-Polar GaN Growth-Jung Han (Yale, email jung.han@yale.edu) 3. High Quality AlGaN Alloys-Hongxing Jiang and Jingyu Lin (Texas Tech, email hx.jiang@ttu.edu and jingyu.lin@ttu.edu) 4. Bulk AlN for UV LEDs -L.J. Schowalter (Crystal IS, email Leo@crystal-IS.com) 5. Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes-Jihyun Kim (Korea University, Seoul 136-701, Korea, email: hyunhyun7@.korea.ac.kr ) 6. GaN-Based Sensors-F. Ren (Univ. Florida, email ren@che.ufl.edu) 7. III-N Alloys for Solar Power Conversion-Wladek Walukievicz (LBL, email W_Walukiewicz@lbl.gov) 8. GaN HEMT Technology-Wayne Johnson (Kopin, email Wayne_Johnson@kopin.com) 9. GaN Power Devices-John Shen (Univ.Central Florida, email johnshen@mail.ucf.edu)- 10. Nitride Nanostructures-Li-Chyong Chen (National Taiwan University, email chenlc@ntu.edu.tw) 11. Radiation-Induced Defects in GaN-Alexander Polyakov (IRM, Russia, email aypolyakov@gmail.com) 12. Electron Injection Effects in GaN-L. Chernyak (Univ. Central Florida, email chernyak@physics.ucf.edu) 13. Progress and Prospect of Rare-Earth Nitrides- R. Palai ( Department of Physics, University of Puerto Rico, San Juan, PR, 00931, USA, email: r.palai@uprrp.edu)- 14. Advances in PLD of ZnO and related compounds-Ashutosh Tiwari, (Dept. of Materials Science & Engineering, University of Utah, E-mail: tiwari@eng.utah.edu) 15. ZnO nanowires and p-type doping-Deli Wang (UCSD, Electrical and Computer Engineering, email dwang@ece.ucsd.edu) 16. Multifunctional ZnO Structures-Yicheng Lu (Rutgers, email ylu@ece.rutgers.edu)- 17. ZnO/MgZnO Quantum Wells-C. Jagadish (ANU, Australia, email cxj109@rsphysse.anu.edu.au) 18. GZO TFTs-E.Fortunato(CENIMAT, FCT-UNL, Campus de Caparica, 2829-516 Caparica, Portugal, email elvira-fortunato@fct.unl.pt )