Springer Electronics and Photonics

I Ion Implanters.- Physical Limitations of Ion Implantation Equipment (With 16 Figures).- A New Ion Implanter for Solar-Cell Fabrication (With 7 Figures).- SURIM - A Westinghouse Surface Implantation Machine (With 8 Figures).- A New Research Implanter at the University of Surrey (With 4 Figures).- Radio Frequency Ion Accelerator (With 6 Figures).- II Ion Sources.- Performance of the Bethge-Baumann Ion Source with Radio Frequency Operation (With 1 Figures).- Emittance Measurements on an Indirectly Heated Heavy-Ion Source (With 3 Figures).- A High-Brightness Duoplasmatron Ion Source (With 2 Figures).- Optimization of a Single-Aperture Extraction System for High-Current Ion Sources (With 9 Figures).- Development of a High-Current Ion Source for Non-Volatile Elements (With 5 Figures).- The Use of Computers for Designing and Testing Ion Beam Systems (With 23 Figures).- Multipole Ion Source for Ion Implantation and Isotope Separation (With 5 Figures).- An Ion Source for Semiconductor Implantation (With 7 Figures).- III Implanter Subsystems.- High Throughput Wafer Handling System for Serial Process Ion Implantation (With 13 Figures).- Comparison of Beam Scanning Systems (With 16 Figures).- A Low-Internal-Resistance and High-Precision High-Voltage Power Supply (With 5 Figures).- Electrostatic Switch Used for 600 kV Ion Implanter (With 6 Figures).- Automatic Wafer Handling for a Mechanically Scanned Ion Implanter (With 3 Figures).- On-Line Control of Production Ion Implanters Using Standard Desk Computers (With 3 Figures).- A Forty-Channel Optical-Fiber Telecommunication System for Manipulation of High-Voltage Terminals in Ion Implanters (With 3 Figures).- Low-Cost Analog Signal Fiber Link with 300 kV Isolation (With 3 Figures).- Improvements in the Vacuum System of a VDG Accelerator Used for Clean Ion Implantation (With 3 Figures).- IV Special Implantation Techniques.- High Temperature Implantation of Powders Using a Horizontal Ion Beam (With 2 Figures).- A Technique for Implanting Dopant Distributions in Solids (With 5 Figures).- Wafer Cooling and Photoresist Masking Problems in Ion Implantation (With 18 Figures).- Electron-Beam-Induced Recoil Implantation in Semiconductors at 300 K (With 10 Figures).- Wafer Cooling in Ion Implantation (With 8 Figures).- A Rotating Attenuator for Concentration Profiling of Implanted Helium Ions (With 6 Figures).- V Ion Beam Lithography.- Ion-Beam Lithography (With 11 Figures).- Development Characteristics of Ga+ Exposed PMMA and Associated Lithographic Resolution Limits (With 5 Figures).- Simulation of the Lithographic Properties of Ion-Beam Resists (With 6 Figures).- Deposition of Masking Films by Ion-Beam Induced Polymerization (With 4 Figures).- VI Measuring Techniques.- Dosimetry and Beam Quality (With 21 Figures).- A New Facility for Ion Beam Surface Analysis (With 6 Figures).- Non-Destructive Techniques for Measuring the Parameters of Low-Energy Continuous Ion Beams (With 5 Figures).- Investigation of the Lifetime of Photocurrent Carriers in Si During Ion Implantation (With 5 Figures).- A Mossbauer Spectrometer for in situ Low Temperature Studies of Ion-Bombarded Metals (With 4 Figures).- Background in (n, p) and (n, ?) Spectrometry (With 6 Figures).- Monitoring of X-Y-Scan Quality by Amorphization Contrast on Silicon Wafers (With 4 Figures).- VII Implantation into Metals.- Techniques and Equipment for Implantation into Metals (With 7 Figures).- Nitriding of Steels: Conventional Processes and Ion Implantation (With 5 Figures).- Effect of Ion Mixing on the Wear Behaviour of Silver (With 4 Figures).- Methods to Control Target Heating During Ion Implantation (With 5 Figures).- VIII Implantation into Semiconductors.- New Applications of Ion Implantation in Silicon Processing (With 14 Figures).- Limitations of Ion Implantation in MOS Technology (With 13 Figures).- Implant Processes for Bipolar Product Manufacturing and Their Effects on Device Yield (With 16 Figures).- Buried Silicon-Nitride Layers Formed by Nitrogen-Ion Implantation and High-Temperature Annealing (With 5 Figures).- Combined Boron and Aluminum Implantation for High-Voltage Devices (With 4 Figures).- Deep Implanted Layers of Boron in Silicon (With 5 Figures).- Planar Channelling of Si Implants in GaAs (With 4 Figures).- Application of High-Current Ion-Implantation Systems in Semiconductor Device Technology (With 6 Figures).- Implantation Doping of Germanium with Be, Mg, Zn, and B Ions (With 7 Figures).- Low Energy Implantation of Nitrogen and Ammonia into Silicon (With 12 Figures).- Doping Behavior of Implanted Magnesium in Silicon (With 11 Figures).- IX Transient Annealing.- Beam Annealing of Ion-Implanted Silicon (With 16 Figures).- Radiation Annealing of Silicon-Implanted GaAs with a CW Xe Arc Lamp (With 7 Figures).- Pulse-Laser-Induced Epitaxial Regrowth of Ion-Implanted Semiconductors (With 15 Figures).- CO2 Laser Annealing of Ion-Implanted Silicon: Relaxation Characteristics of Metastable Concentrations (With 6 Figures).- Rapid Isothermal Annealing for Semiconductor Applications: Aspects of Equipment Design (With 5 Figures).- Investigation of Polysilicon Implantation Under Thermal and Laser Annealing (With 8 Figures).- CW-CO2-Laser Alloying of Au-Ge-Ni Ohmic Contacts on GaAs (With 7 Figures).- Photoluminescence of Ion-Implanted Gallium Arsenide After Laser Annealing (With 7 Figures).- Channeling and High-Resolution Backscattering Studies of Laser-Annealed Low-Energy Arsenic-Implanted Silicon (With 8 Figures).- Index of Contributors.