Springer Advanced Microelectronics

Modeling and Simulation

By: Fabrizio Bonani, Giovanni Ghione

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Hardcover | 31 July 2001

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252 Pages

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23.5 x 15.88 x 1.91

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The design and optimization of electronic systems often requires appraisal an of the electrical noise generated by active devices, and, at a technological level, the ability to properly design active elements in order to minimize, when possible, their noise. Examples of critical applications are, of course, receiver front-ends in RF and optoelectronic transmission systems, but also front-end stages in sensors and, in a completely different context, nonlinear circuits such as oscillators, mixers, and frequency multipliers. The rapid de- velopment of silicon RF applications has recently fostered the interest toward low-noise silicon devices for the lower microwave band, such as low-noise MOS transistors; at the same time, the RF and microwave ranges are be- coming increasingly important in fast optical communication systems. Thus, high-frequency noise modeling and simulation of both silicon and compound- semiconductor based bipolar and field-effect transistors can be considered as an important and timely topic. This does not exclude, of course, low- frequency noise, which is relevant also in the RF and microwave ranges when- ever it is up-converted within a nonlinear system, either autonomous (as an oscillator) or non-autonomous (as a mixer or frequency multiplier). The aim of the present book is to provide a thorough introduction to the physics-based numerical modeling of semiconductor devices operating both in small-signal and in large-signal conditions. In the latter instance, only the non-autonomous case was considered, and thus the present treatment does not directly extend to oscillators.

Industry Reviews

From the reviews of the first edition:

"This book is devoted to the research and estimation of the electrical noise generated by active semiconductor devices. It provides a thorough introduction to the physics-based numerical modeling of these devices operating both in small-signal and in large-signal conditions. ... this comprehensive treatment of the numerical simulation of noise in semiconductor devices successfully combines a modern physical understanding with rigorous mathematics and numerical methods. This book should be recommended to scientists and engineers of corresponding specialties ... ." (I. A. Parinov, Zentralblatt MATH, Vol. 1044 (19), 2004)

"Bonani and Ghione have written an excellent source book for research engineers and scientists interested in the modelling of noise in semiconductor devices. ... Compact noise models are derived from analytic models and numerical methods are presented to solve for the complex and realistic models. ... There is a useful and reasonably comprehensive bibliography. I strongly recommend this book to specialists in the area." (B. D. Nener, The Physicist, Vol. 39 (2), 2002)

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Published: 26th December 2012

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List of Symbols
Noise in Semiconductor Devices	p. 1
Fluctuations in Semiconductors	p. 1
Microscopic Noise Sources in Semiconductors	p. 3
Back to Basics: the Fundamental Approach	p. 26
Equivalent Representation of Noisy Devices	p. 30
Noise Analysis Techniques	p. 39
Semiconductor Device Physical Models for Noise Modeling	p. 39
Langevin Approach to Noise Analysis	p. 45
Applications of the Green's Function Approach: Compact Device Noise Modeling	p. 58
Physics-Based Small-Signal Noise Simulation	p. 77
Numerical Treatment of Physics-Based Device Models: a Review	p. 77
Numerical Noise Simulation: Formulation	p. 88
Efficient Evaluation of the Green's Functions	p. 92
Results and Case Studies	p. 101
Resistors	p. 102
Semiconductor Diodes	p. 113
Field-Effect Transistors	p. 122
Bipolar Junction Transistors	p. 136
Noise in Large-Signal Operation	p. 143
A System-Oriented Introduction	p. 143
Circuit-Oriented Large-Signal Noise analysis	p. 149
Physics-Based Large-Signal and SSLS Device Analysis	p. 162
LS Physics-Based Noise Analysis	p. 168
Results	p. 172
Review of Probability Theory and Random Processes	p. 177
References	p. 201
Index	p. 209
Table of Contents provided by Blackwell. All Rights Reserved.

Springer Advanced Microelectronics

Modeling and Simulation

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Industry Reviews

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