| Preface | p. ix |
| Single Spin Coherence in Semiconductors | p. 1 |
| Introduction | p. 2 |
| Single Electron Spins in Quantum Dots | p. 3 |
| Few Magnetic Spins in Quantum Wells | p. 18 |
| Single Spins in Diamond | p. 27 |
| References | p. 41 |
| Theory of Spin-Orbit Effects in Semiconductors | p. 45 |
| Introduction | p. 46 |
| The Relativistic Origins of Spin-Orbit Coupling | p. 48 |
| Band Structure of Semiconductors: Effective k - p Hamiltonians | p. 51 |
| SHE and AHE | p. 61 |
| Topological Berry's Phases in Spin-Orbit Coupled Systems: ACE | p. 79 |
| References | p. 85 |
| Fermi Level Effects on Mn Incorporation in III-Mn-V Ferromagnetic Semiconductors | p. 89 |
| Introduction | p. 90 |
| Sample Preparation and Characterization | p. 93 |
| Effects of Mn Location on the Electronic and Magnetic Properties | p. 98 |
| Concluding Remarks | p. 125 |
| Acknowledgments | p. 130 |
| References | p. 130 |
| Transport Properties of Ferromagnetic Semiconductors | p. 135 |
| Introduction | p. 135 |
| Basic Transport Characteristics | p. 138 |
| Extraordinary Magnetotransport | p. 167 |
| Summary | p. 199 |
| Acknowledgments | p. 200 |
| References | p. 200 |
| Spintronic Properties of Ferromagnetic Semiconductors | p. 207 |
| Introduction | p. 207 |
| Spin-Injection and Detection of Spin-Polarization | p. 209 |
| Magnetic Tunnel Junction | p. 212 |
| Magnetic DW | p. 218 |
| Electric-Field Control of Ferromagnetism | p. 228 |
| Optical Control of Ferromagnetism | p. 231 |
| Summary | p. 234 |
| Acknowledgments | p. 235 |
| References | p. 235 |
| Spintronic Nanodevices | p. 241 |
| Introduction | p. 241 |
| Tunneling Anisotropic Magnetoresistance | p. 244 |
| Multi-TAMR Structures | p. 248 |
| Volatile and Nonvolatile Operation | p. 250 |
| Correlated Effects | p. 252 |
| Portability | p. 259 |
| Nanodevices | p. 260 |
| Lateral Nanoconstrictions | p. 260 |
| Current-Assisted Manipulation | p. 264 |
| Local Lithographic Anisotropy Control | p. 268 |
| Magnetic Characterization of Nanobars | p. 269 |
| Transport Characterization of Nanobars | p. 271 |
| Anisotropic Strain Relaxation | p. 274 |
| Memory Device Using Local Anisotropy Control | p. 277 |
| Device Operation | p. 278 |
| Magnetic States | p. 279 |
| Origin of the Resistance Signal | p. 280 |
| Conclusion and Outlook | p. 283 |
| Acknowledgments | p. 284 |
| References | p. 284 |
| Quantum Structures of II-VI Diluted Magnetic Semiconductors | p. 287 |
| Magnetic and Electric Impurities in II-VI Nanostructures | p. 287 |
| Carrier-Induced Ferromagnetism in 2D DMSs | p. 291 |
| 0D Systems | p. 298 |
| Transport in Quantum II-VI DMS Structures | p. 316 |
| Summary | p. 320 |
| References | p. 320 |
| Magnetic Impurities in Wide Band-gap III-V Semiconductors | p. 325 |
| Introduction | p. 326 |
| Diluted Magnetic Semiconductors | p. 330 |
| Nature of Mn Impurity in III-V Semiconductors | p. 334 |
| Magnetic Interactions in III-V DMSs with Mn | p. 352 |
| GaN-Based DMSs | p. 357 |
| Internal Reference Rule for Transition Metal Ions-Case of GaN | p. 361 |
| Summary and Conclusions | p. 362 |
| Acknowledgments | p. 364 |
| References | p. 364 |
| Exchange Interactions and Nanoscale Phase Separations in Magnetically Doped Semiconductors | p. 371 |
| Introduction | p. 372 |
| Substitutional Transition Metal Impurities in Semiconductors | p. 375 |
| Origin of Exchange Interactions between Carriers and Localized Spins | p. 381 |
| Effects of sp-d(f) Exchange Interactions | p. 382 |
| Exchange Interactions between Effective Mass Carriers | p. 392 |
| Models of Ferromagnetic Spin-Spin Interactions in Semiconductors | p. 397 |
| p-d Zener Model of Carrier-Mediated Ferromagnetism | p. 399 |
| Effects of Disorder and Localization on Carrier-Mediated Ferromagnetism | p. 407 |
| Effects of Nonrandom Distribution of Magnetic ions | p. 416 |
| Is Ferromagnetism Possible in Semiconductors with no Magnetic Elements? | p. 422 |
| Summary | p. 423 |
| Acknowledgments | p. 425 |
| References | p. 425 |
| Computational Nano-Materials Design for the Wide Band-Gap and High-T[subscript C] Semiconductor Spintronics | p. 433 |
| Introduction | p. 433 |
| Magnetic Mechanism, T[subscript c], and Unified Physical Picture | p. 436 |
| Spinodal Nano-Decomposition and Nano-Spintronics Applications | p. 444 |
| New Class of Oxide Spintronics without a 3d TM | p. 450 |
| Conclusion | p. 452 |
| Acknowledgments | p. 452 |
| References | p. 452 |
| Properties and Functionalities of MnAs/III-V Hybrid and Composite Structures | p. 455 |
| Introduction | p. 455 |
| Fabrication and Structure of GaAs:MnAs Nano-Particles | p. 456 |
| Large Magnetoresistance at Room Temperature | p. 458 |
| Spin Dependent Tunneling Transport Properties in III-V Based Heterostructures Containing GaAs:MnAs | p. 463 |
| Properties of Zinc-Blende Type and NiAs-Type MnAs Nano-particles | p. 471 |
| Magneto-Optical Device Applications | p. 478 |
| Acknowledgments | p. 483 |
| References | p. 484 |
| Index | p. 487 |
| Contents of Volumes in This Series | p. 499 |
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