| Fundamentals of Noise in Optoelectronics | p. 1 |
| Introduction | p. 1 |
| Quantization of Electromagnetic Radiation, Electrical Charge, and Energy States in Bound Systems | p. 2 |
| Basic Properties of the Poisson Distribution | p. 3 |
| Interaction of Radiation and Matter | p. 5 |
| Noise Properties of Light Sources | p. 6 |
| Coherent Light (Single-Mode Lasers) | p. 6 |
| Thermal (Incandescent) Light Sources | p. 6 |
| Partially Coherent Light (Discharge Lamps) | p. 7 |
| Light Emitting Diodes | p. 8 |
| The Meaning of "Single-Photon Imaging" | p. 9 |
| Energy Band Model of Solid State Matter | p. 11 |
| Detection of Electromagnetic Radiation with Semiconductors | p. 12 |
| Quantum Efficiency and Band Structure | p. 12 |
| Thermal Equilibrium and Nonequilibrium Carrier Concentrations | p. 13 |
| Dark Current | p. 14 |
| Avalanche Effect and Excess Noise Factor | p. 15 |
| Electronic Detection of Charge | p. 16 |
| Basic Components of Electronics and their Noise Properties | p. 17 |
| Basic Circuits for Electronic Charge Detection | p. 20 |
| Conclusions for Single-Electron Charge Detection | p. 21 |
| Summary: Physical Limits of the Detection of Light | p. 23 |
| Sensitive Wavelength Range | p. 23 |
| Dark Current and Quantum Efficiency | p. 24 |
| Electronic Charge Detection | p. 24 |
| References | p. 25 |
| Image Sensor Technology | p. 27 |
| Program and a Brief History of Solid-State Image Sensors | p. 27 |
| Anatomy of an Image Sensor | p. 28 |
| Operation | p. 33 |
| Image Sensor Devices | p. 35 |
| Image Sensor Process Technology | p. 39 |
| Outlook for a Single Photon Process Technology | p. 46 |
| References | p. 47 |
| Hybrid Avalanche Photodiode Array Imaging | p. 49 |
| Introduction | p. 49 |
| Principle of Hybrid APD Operation | p. 50 |
| Single-pixel Large Format Hybrid APD | p. 51 |
| Device Description | p. 51 |
| Performance | p. 53 |
| Application | p. 55 |
| Multipixel Hybrid APD Array | p. 56 |
| Device Description | p. 56 |
| Performance | p. 60 |
| Application | p. 61 |
| Conclusions and Remaining Issues | p. 62 |
| References | p. 52 |
| Electron Bombarded Semiconductor Image Sensors | p. 63 |
| Introduction | p. 53 |
| Electron Bombarded Semiconductor Gain Process | p. 65 |
| Hybrid Photomultiplier EBS Image Sensors | p. 66 |
| Hybrid Photomultiplier Gain and Noise Analysis | p. 66 |
| Hybrid Photomultiplier Time Response | p. 67 |
| Hybrid Photomultiplier Imagers | p. 67 |
| EBCCD and EBCMOS EBS Image Sensors | p. 69 |
| References | p. 71 |
| Single-Photon Imaging Using Electron Multiplication in Vacuum | p. 73 |
| Introduction | p. 73 |
| The Photocathode | p. 75 |
| The Working Principle of Photocathodes | p. 75 |
| Multialkali Photocathodes | p. 77 |
| III-V Photocathodes | p. 79 |
| Image Intensifiers | p. 80 |
| Working Principle | p. 80 |
| Applications | p. 82 |
| The Components of an Image Intensifier | p. 83 |
| Performance Characteristics | p. 87 |
| Special Image Intensifiers | p. 94 |
| Photomultiplier Tube | p. 95 |
| Working Principle | p. 95 |
| Applications | p. 95 |
| The Components of a PMT | p. 97 |
| Performance Characteristics | p. 99 |
| Conclusions and Outlook | p. 102 |
| References | p. 102 |
| Electron-Multiplying Charge Coupled Devices - EMCCDs | p. 103 |
| Introduction | p. 103 |
| Harnessing Impact Ionisation for Ultra Sensitive CCD Imaging | p. 104 |
| The Electron Multiplying CCD Concept | p. 104 |
| Output Amplifier Noise | p. 104 |
| The Use of Multiplication Gain | p. 106 |
| Noise and Signal-to-Noise Ratio | p. 109 |
| Output Signal Distributions | p. 110 |
| Photon Counting with the EMCCD | p. 112 |
| Background Signal Generation | p. 114 |
| Dark Signal | p. 114 |
| Statistics of Dark Signal Generation | p. 117 |
| Spurious Charge Generation | p. 117 |
| Improving the Efficiency of Signal Generation | p. 118 |
| Concluding Comments | p. 119 |
| References | p. 120 |
| Monolithic Single-Photon Avalanche Diodes: SPADs | p. 123 |
| A Brief Historical Perspective | p. 123 |
| Fundamental Mechanisms | p. 124 |
| SPAD Structure and Operation | p. 124 |
| Idle State and Avalanche Buildup | p. 126 |
| Quench, Spread, and Recharge | p. 129 |
| Example Waveforms | p. 131 |
| Pulse-Shaping | p. 134 |
| Uncorrelated Noise: Dark Counts | p. 135 |
| Correlated Noise: Afterpulsing and Other Time Uncertainties | p. 136 |
| Sensitivity: Photon Detection Probability | p. 138 |
| Wavelength Discrimination | p. 141 |
| Fabricating Monolithic SPADs | p. 141 |
| Vertical Versus Planar SPADs | p. 141 |
| Implementation in Planar Processes | p. 142 |
| SPAD Nonidealities | p. 146 |
| SPAD Array Nonidealities | p. 146 |
| Architecting SPAD Arrays | p. 148 |
| Basic Architectures | p. 148 |
| On-Chip Architecture | p. 149 |
| In-Column Architecture | p. 150 |
| In-Pixel Architecture | p. 151 |
| Trends in Monolithic Array Designs | p. 153 |
| Conclusions | p. 154 |
| References | p. 154 |
| Single Photon CMOS Imaging Through Noise Minimization | p. 159 |
| Introduction | p. 159 |
| Theory | p. 161 |
| QE and MTF | p. 161 |
| Photo-carrier Detection Probability | p. 167 |
| Additive Temporal Noise Systems | p. 168 |
| Uncorrelated Temporal Noise Sources | p. 170 |
| Correlated Temporal Noise Sources | p. 174 |
| Amplification and Bandwidth Control | p. 175 |
| Amplification | p. 175 |
| Bandwidth Control | p. 179 |
| Architectures | p. 181 |
| 4T Pixel with Pinned Photodiode Column Level Amplification and CDS | p. 181 |
| 4T CTIA Pixel with Pinned Photo Diode Column Level Amplification and CDS | p. 184 |
| Architecture Comparison | p. 188 |
| Low-Noise CMOS Image Sensor Optimization | p. 189 |
| Electrical | p. 189 |
| Optical | p. 192 |
| Conclusion | p. 193 |
| References | p. 194 |
| Architectures for Low-noise CMOS Electronic Imaging | p. 197 |
| Introduction | p. 197 |
| Signal Readout Architectures | p. 198 |
| Correlated Samplings and their Noise Responses | p. 201 |
| Correlated Double Sampling and Correlated Multiple Sampling | p. 201 |
| Response of CDS and CMS to Thermal and 1/f Noises | p. 203 |
| Noise in Active-pixel CMOS Image Sensors Using Column CMS Circuits | p. 207 |
| Possibility of Single Photon Detection | p. 211 |
| Single Photon Detection Using Quantization | p. 211 |
| Condition for Single Photon Detection | p. 214 |
| References | p. 216 |
| Low-Noise Electronic Imaging with Double-Gate FETs and Charge-Modulation Devices | p. 219 |
| Introduction | p. 219 |
| Double-Gate FET Charge Detector | p. 220 |
| Floating Well Type | p. 220 |
| Floating Surface Type | p. 226 |
| CCD Image Sensor with Double-Gate FET Charge Detector | p. 233 |
| Sensor Construction | p. 233 |
| Feedback Charge Detector | p. 234 |
| Evaluation | p. 236 |
| Signal Processing | p. 237 |
| Charge-Modulation Image Pixel Application | p. 239 |
| Pixel Construction | p. 242 |
| Operation | p. 243 |
| Simulation | p. 245 |
| Results | p. 245 |
| Applications of Area Sensor | p. 246 |
| Conclusions | p. 248 |
| References | p. 248 |
| Energy-Sensitive Single-Photon X-ray and Particle Imaging | p. 249 |
| Introduction | p. 249 |
| Applications | p. 250 |
| Basic Topology | p. 251 |
| Particle Sensing Devices | p. 251 |
| Direct Conversion Sensing Devices | p. 252 |
| Scintillators Coupled to Sensing Devices for Visible Light | p. 253 |
| Asynchronous Charge Pulse Detecting Circuits | p. 254 |
| Charge Sensitive Amplifier | p. 255 |
| Charge Sensitive Amplifier with Shaper | p. 261 |
| Voltage Buffer with Shaper | p. 269 |
| Voltage Pulse Processing Circuits | p. 271 |
| Energy Discrimination Methods | p. 272 |
| Information Readout | p. 272 |
| References | p. 273 |
| Single-Photon Detectors for Time-of-Flight Range Imaging | p. 275 |
| Introduction | p. 275 |
| Time-of-Flight Measuring Techniques and Systems | p. 278 |
| Time-of-flight System | p. 278 |
| Direct and Indirect Time Measuring Techniques | p. 279 |
| Optical Power Budget | p. 281 |
| D-TOF and I-TOF Noise Considerations | p. 284 |
| Single-Photon Sensors for 3D-TOF Imaging | p. 286 |
| Single-photon Detectors | p. 286 |
| Pixel Architectures for Single-photon TOF Imaging | p. 288 |
| Circuit Implementations for I-TOF Pixels | p. 289 |
| Circuit Implementations for D-TOF Pixels | p. 291 |
| State-of-the-art Time-resolved CMOS SPAD Pixel-array | p. 293 |
| Challenges and Future Perspectives | p. 294 |
| Conclusions | p. 297 |
| References | p. 298 |
| Single-Photon Imaging for Astronomy and Aerospace Applications | p. 301 |
| Introduction | p. 301 |
| Scientific Detectors in Astronomy and Space Applications | p. 303 |
| Scientific CCDs | p. 303 |
| Imaging Through the Atmosphere | p. 309 |
| Lucky Imaging Technique | p. 311 |
| Adaptive Optics | p. 313 |
| Principles | p. 313 |
| Wavefront Sensor Requirements and Detector Implementations | p. 315 |
| Infrared Detectors for Wavefront Sensor | p. 319 |
| Space LIDAR Applications | p. 321 |
| Concluding Remarks | p. 324 |
| References | p. 325 |
| Exploiting Molecular Biology by Time-Resolved Fluorescence Imaging | p. 329 |
| Introduction: Time-Resolved Fluorescence as a Uniquely Sensitive Detection Method for the Analysis of Molecular Biology | p. 329 |
| Labeling of Specific Molecules by a Long- Lifetime Fluorophore | p. 330 |
| Integration of the Investigated Specimens in a Planar Array: Homogeneous and Heterogeneous Assays | p. 331 |
| Excitation of Multiple Specimens in the Array by Intense Light Pulses and Imaging of the Arrayed Specimens on an Image Sensor conceived for Time-Gated Readout of the Fluorescence Signal | p. 332 |
| Microarray Assays | p. 333 |
| Properties of the Ideal Fluorophore for Ultra-Sensitive Fluorescence Detection | p. 334 |
| Ruthenium Complexes | p. 336 |
| Applications in the Life Sciences | p. 338 |
| Assay for Drug Discovery | p. 338 |
| Assay for Point of Care Testing | p. 341 |
| Prospective Use of Ultra-Low-Noise CMOS Image Sensors for Time-Resolved Fluorescence Imaging | p. 342 |
| References | p. 344 |
| Index | p. 345 |
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