| Numerical Modelling and Materials Characterisation for Integrated Micro Electro Mechanical Systems | p. 1 |
| Fast and Accurate Aerial Imaging Simulation for Layout Printability Optimization | p. 10 |
| Efficient and Rigorous 3D Model for Optical Lithography Simulation | p. 14 |
| Application of the Two-dimensional Numerical Simulation for the Description of Semiconductor Gas Sensors | p. 18 |
| Analysis of Piezoresistive Effects in Silicon Structures Using Multidimensional Process and Device Simulation | p. 22 |
| Modeling of Magnetic-Field-Sensitive GaAs Devices Using 3D Monte Carlo Simulation | p. 26 |
| Quasi Three-Dimensional Simulation of Heat Transport in Thermal Based Microsensors | p. 30 |
| Simulating Deep Sub-Micron Technologies: An Industrial Perspective | p. 34 |
| An Improved Calibration Methodology for Modeling Advanced Isolation Technologies | p. 42 |
| Algorithms for the Reduction of Surface Evolution Discretization Error | p. 46 |
| Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation | p. 50 |
| A Data-Model for a Technology and Simulation Archive | p. 54 |
| A Programmable Tool for Interactive Wafer-State Level Data Processing | p. 58 |
| Layout Design Rule Generation with TCAD Tools for Manufacturing | p. 62 |
| ALAMODE: A Layered Model Development Environment | p. 66 |
| TCAD Optimization Based on Task-Level Framework Services | p. 70 |
| Cellular Automata Simulation of GaAS-IMPATT-Diodes | p. 74 |
| Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface States | p. 78 |
| An Efficient Numerical Method to Solve the Time-Dependent Semiconductor Equations Including Trapped Charge | p. 82 |
| Advances in Numerical Methods for Convective Hydrodynamic Model of Semiconductor Devices | p. 86 |
| An Advanced Cellular Automaton Method with Interpolated Flux Scheme and its Application to Modeling of Gate Currents in Si MOSFETs | p. 90 |
| Piezoresistance and the Drift-Diffusion Model in Strained Silicon | p. 94 |
| A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors | p. 98 |
| Ge Profile for Minimum Neutral Base Transit Time in [actual symbol not reproducible] Heterojunction Bipolar Transistors | p. 102 |
| Performance Optimization in Si/SiGe Heterostructure FETs | p. 106 |
| On the Integral Representations of Electrical Characteristics in Si Devices | p. 110 |
| Large Signal Frequency Domain Device Analysis Via the Harmonic Balance Technique | p. 114 |
| A Method for Extracting the Threshold Voltage of MOSFETs Based on Current Components | p. 118 |
| 2-D MOSFET Simulation by Self-Consistent Solution of the Boltzmann and Poisson Equations Using a Generalized Spherical Harmonic Expansion | p. 122 |
| Ultra High Performance, Low Power 0.2 [mu]m CMOS Microprocessor Technology and TCAD Requirements | p. 126 |
| Viscoelastic Modeling of Titanium Silicidation | p. 135 |
| Multidimensional Nonlinear Viscoelastic Oxidation Modeling | p. 139 |
| Three-Dimensional Integrated Process Simulator: 3D- MIPS | p. 143 |
| Effect of Process-Induced Mechanical Stress on Circuit Layout | p. 147 |
| The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI | p. 151 |
| Numerical and Analytical Modelling of Head Resistances of Diffused Resistors | p. 155 |
| New Spreading Resistance Effect for Sub-0.50[mu]m MOSFETs: Model and Simulation | p. 159 |
| The Role of SEMATECH in Enabling Global TCAD Collaboration | p. 163 |
| Three Dimensional Simulation for Sputter Deposition Equipment and Processes | p. 166 |
| Comprehensive Reactor, Plasma, and Profile Simulator for Plasma Etch Processes | p. 170 |
| Modeling the Wafer Temperature in a LPCVD Furnace | p. 174 |
| Determination of Electronic States in Low Dimensional Heterostructure and Quantum Wire Devices | p. 178 |
| An Exponentially Fitted Finite Element Scheme for Diffusion Process Simulation on Coarse Grids | p. 182 |
| Achievement of Quantitatively Accurate Simulation of Ion-Irradiated Bipolar Power Devices | p. 186 |
| Modeling of Substrate Bias Effect in Bulk and SOI SiGe-channel p-MOSFETs | p. 190 |
| A Very Fast Three-Dimensional Impurity Profile Simulation Incorporating An Accumulated Diffusion Length and its Application to the Design of Power MOSFETs | p. 191 |
| Recovery of Vectorial Fields and Currents in Multidimensional Simulation | p. 198 |
| An Efficient Approach to Solving The Boltzmann Transport Equation in Ultra-fast Transient Situations | p. 202 |
| Modeling of a Hot Electron Injection Laser | p. 206 |
| Scaling Considerations of Bipolar Transistors Using 3D Device Simulation | p. 210 |
| Three Dimensional Monte Carlo Simulation of Boron Implantation into [100] Single-Crystal Silicon Considering Mask Structure | p. 214 |
| A fully 2D, Analytical Model for the Geometry and Voltage Dependence of Threshold Voltage in Submicron MOSFETs | p. 218 |
| On the Influence of Band Structure and Scattering Rates on Hot Electron Modeling | p. 222 |
| Finite Element Monte Carlo Simulation of Recess Gate FETs | p. 226 |
| Coupled 2D-Microscopic/Macroscopic Simulation of Nanoelectronic Heterojunction Devices | p. 230 |
| On the Discretization of van Roosbroeck's Equations with Magnetic Field | p. 234 |
| Modeling of Impact Ionization in a Quasi Deterministic 3D Particle Dynamics Semiconductor Device Simulation Program | p. 238 |
| Accurate Modeling of Ti/TiN Thin Film Sputter Deposition Processes | p. 242 |
| Monte Carlo Simulation of InP/InGaAs HBT with a Buried Subcollector | p. 246 |
| Design and Optimization of Millimeter-Wave IMPATT Oscillators Using a Consistent Model for Active and Passive Circuit Parts | p. 250 |
| Generalised Drift-Diffusion Model of Bipolar Transport in Semiconductors | p. 254 |
| Efficient 3D Unstructured Grid Algorithms for Modelling of Chemical Vapour Deposition in Horizontal Reactors | p. 258 |
| Preventing Critical Conditions in IGBT Chopper Circuits by a Multi-Step Gate Drive Mode | p. 262 |
| Control of Plasma Dynamics within Double-Gate-Turn-Off Thyristors (D-GTO) | p. 266 |
| A Vector Level Control Function for Generalized Octree Mesh Generation | p. 270 |
| Comparison of Hydrodynamic Formulations for Non-Parabolic Semiconductor Device Simulations | p. 274 |
| Influence of Analytical MOSFET Model Quality on Analog Circuit Simulation | p. 278 |
| 2-D Adaptive Simulation of Dopant Implantation and Diffusion | p. 282 |
| Optimization of a Recessed LOCOS Using a Tuned 2-D Process Simulator | p. 286 |
| Simulation of Complex Planar Edge Termination Structures for Vertical IGBTs by Solving the Complete Semiconductor Device Equations | p. 290 |
| Numerical Analysis of Hot-Electron Effects in GaAs MESFETs | p. 294 |
| Capacitance Model of Microwave InP-Based Double Heterojunction Bipolar Transistors | p. 298 |
| Estimation of the Charge Collection for the Soft-Error Immunity by the 3D-Device Simulation and the Quantitative Investigation | p. 302 |
| D. C. Electrothermal Hybrid BJT Model for SPICE | p. 306 |
| Alpha-Particle Induced Soft Error Rate Evaluation Tool and User Interface | p. 310 |
| Hydrodynamic Modeling of Electronic Noise by the Transfer Impedance Method | p. 314 |
| Monte Carlo Simulation of S-Type Negative Differential Conductance in Semiconductor Heterostructures | p. 318 |
| Two Barrier Model for Description of Charge Carriers Transport Processes in Structures with Porous Silicon | p. 322 |
| Monte-Carlo Simulation of Inverted Hot Carrier Distribution Under Strong Carrier-Optical Phonon Scattering | p. 325 |
| Algorithms and Models for Simulation of MOCVD of III-V Layers in the Planetary Reactor | p. 328 |
| An Approach for Explaining Drift Phenomena in GTO Devices Using Numerical Device Simulation | p. 332 |
| Parallel 3D Finite Element Power Semiconductor Device Simulator Based on Topologically Rectangular Grid | p. 336 |
| Investigation of Silicon Carbide Diode Structures via Numerical Simulations Including Anisotropic Effects | p. 340 |
| A New Physical Compact Model of CLBTs for Circuit Simulation Including Two-Dimensional Calculations | p. 344 |
| Combining 2D and 3D Device Simulation with Circuit Simulation for Optimising High Efficiency Silicon Solar Cells | p. 348 |
| A New Quasi-two Dimensional HEMT Model | p. 352 |
| Simulations of the Forward Behaviour of Hybrid Schottky-/pn-Diodes | p. 356 |
| HFET Breakdown Study by 2D and Quasi 2D Simulations: Topology Influence | p. 360 |
| Investigation of GTO Turn-on in an Inverter Circuit at Low Temperatures Using 2D Electrothermal Simulation | p. 364 |
| Large Scale Thermal Mixed Mode Device and Circuit Simulation | p. 368 |
| Scaling of Conventional MOSFET's to the 0.1[mu]m Regime | p. 372 |
| Monte Carlo Simulation of Carrier Capture at Deep Centers for Silicon and Gallium Arsenide Devices | p. 380 |
| A New Statistical Enhancement Technique in Parallelized Monte Carlo Device Simulation | p. 384 |
| Stability Issues in Self-Consistent Monte-Carlo Poisson Simulations | p. 388 |
| The Path Integral Monte Carlo Method for Quantum Transport on a Parallel Computer | p. 392 |
| A Monte Carlo Transport Model Based on Spherical Harmonics Expansion of the Valence Bands | p. 396 |
| Full-Band Monte Carlo Transport Calculation in an Integrated Simulation Platform | p. 400 |
| On Particle-Mesh Coupling in Monte Carlo Semiconductor Device Simulation | p. 404 |
| T[superscript 2]CAD: Total Design for Sub-[mu]m Process and Device Optimization with Technology-CAD | p. 408 |
| Modelling Impact-Ionization in the Framework of the Spherical-Harmonics Expansion of the Boltzmann Transport Equation with Full-Band Structure Effects | p. 416 |
| Impact Ionization Model Using Second- and Fourth-Order Moments of Distribution Functions | p. 420 |
| An Accurate NMOS Mobility Model for 0.25[mu]m MOSFETs | p. 424 |
| A 2-D Modeling of Metal-Oxide-Polycrystalline Silicon-Silicon (MOPS) Structures for the Determination of Interface State and Grain Boundary State Distributions | p. 428 |
| Sensitivity Analysis of an Industrial CMOS Process Using RSM Techniques | p. 432 |
| Process- and Device-simulation of Very High Speed Vertical MOS Transistors | p. 436 |
| Two- Dimensional Transient Simulation of Charge- Coupled Devices Using MINIMOS NT | p. 440 |
| Determination of Vacancy Diffusivity in Silicon for Process Simulation | p. 444 |
| Precipitation Phenomena and Transient Diffusion/Activation During High Concentration Boron Annealing | p. 448 |
| Modelling of Silicon Interstitial Surface Recombination Velocity at Non-Oxidizing Interfaces | p. 452 |
| Efficient Hybrid Solution of Sparse Linear Systems | p. 456 |
| Mesh Generation for 3D Process Simulation and the Moving Boundary Problem | p. 460 |
| Three-Dimensional Grid Adaption Using a Mixed-Element Decomposition Method | p. 464 |
| Unified Grid Generation and Adaptation for Device Simulation | p. 468 |
| Platinum Diffusion at Low Temperatures | p. 472 |
| Lattice Monte-Carlo Simulations of Vacancy-Mediated Diffusion and Implications for Continuum Models of Coupled Diffusion | p. 476 |
| A New Hydrodynamic Equation for Ion-Implantation Simulation | p. 480 |
| Monte Carlo Simulation of Multiple-Species Ion Implantation and its Application to the Modeling of 0.1[mu] PMOS Devices | p. 484 |
| Analytical Model for Phosphorus Large Angle Tilted Implantation | p. 488 |
| Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation | p. 492 |
| Author Index | p. 496 |
| Table of Contents provided by Blackwell. All Rights Reserved. |
