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Reducing the size of a coherently grown semiconductor cluster in all three directions of space to a value below the de Broglie wavelength of a charge carrier leads to complete quantization of the energy levels, density of states, etc. Such "quantum dots" are more similar to giant atoms in a dielectric cage than to classical solids or semiconductors showing a dispersion of energy as a function of wavevector. Their electronic and optical properties depend strongly on their size and shape, i.e. on their geometry. By designing the geometry by controlling the growth of QDs, absolutely novel possibilities for material design leading to novel devices are opened.
This multiauthor book written by world-wide recognized leaders of their particular fields and edited by the recipient of the Max-Born Award and Medal 2006 Professor Dieter Bimberg reports on the state of the art of the growing of quantum dots, the theory of self-organised growth, the theory of electronic and excitonic states, optical properties and transport in a variety of materials. It covers the subject from the early work beginning of the 1990s up to 2006. The topics addressed in the book are the focus of research in all leading semiconductor and optoelectronic device laboratories of the world.
Industry Reviews
From the reviews:
"This book focuses on the physics of quantum dots. It offers a very broad perspective, including growth of dots ... and various applications such as dots for electronic memory and single-photon generation. ... It is an overview where every chapter is ... self-contained entry written by a different set of authors. ... The editor ... has done an outstanding work in selecting the most important works on nanostructures coming from this center of excellence, and presenting them in a compact, well-illustrated and readable volume." (Jacques Tempere, Belgian Physical Society Magazine, Issue 2, June, 2009)
| Preface | p. v |
| List of Contributors | p. xvii |
| Thermodynamics and Kinetics of Quantum Dot Growth | p. 1 |
| Introduction | p. 2 |
| Length and Time Scales | p. 3 |
| Multiscale Approach to the Modeling of Nanostructures | p. 4 |
| Atomistic Aspects of Growth | p. 5 |
| Diffusion of Ga Atoms on GaAs(001) | p. 5 |
| Energetics of As2 Incorporation During Growth | p. 5 |
| Kinetic Monte Carlo Simulation of GaAs Homoepitaxy | p. 6 |
| Wetting Layer Evolution | p. 9 |
| Size and Shapes of Individual Quantum Dots | p. 11 |
| Hybrid Approach to Calculation of the Equilibrium Shape of Individual Quantum Dots | p. 11 |
| Role of High-Index Facets in the Shape of Quantum Dots | p. 13 |
| Shape Transition During Quantum Dot Growth | p. 14 |
| Constraint Equilibrium of Quantum Dots with a Wetting Layer | p. 15 |
| Thermodynamics and Kinetics of Quantum Dot Ensembles | p. 19 |
| Equilibrium Volumeof Strained Islands versus Ostwald Ripening | p. 19 |
| Crossover from Kinetically Controlled to Thermodynamically Controlled Growth of Quantum Dots | p. 22 |
| Tunable Metastability of Quantum Dot Arrays | p. 25 |
| Evolution Mechanisms in Dense Arrays of Elastically Interacting Quantum Dots | p. 27 |
| Quantum Dot Stacks | p. 29 |
| Transition between Vertically Correlated and Vertically Anticorrelated Quantum Dot Growth | p. 29 |
| Finite Size Effect: Abrupt Transitions between Correlated and Anticorrelated Growth | p. 31 |
| Reduction of a Size of a Critical Nucleus in the Second Quantum Dot Layer | p. 32 |
| Summary and Outlook | p. 34 |
| References | p. 35 |
| Control of Self-Organized In(Ga)As/GaAs Quantum Dot Growth | p. 41 |
| Introduction | p. 41 |
| Evolution and Strain Engineering of InGaAs/GaAs Quantum Dots | p. 42 |
| Evolution of InGaAs Dots | p. 42 |
| Engineering of Single and Stacked InGaAs QD Layers | p. 46 |
| Growth Control of Equally Shaped InAs/GaAs Quantum Dots | p. 50 |
| Formation of Self-Similar Dots with a Multimodal Size Distribution | p. 51 |
| Kinetic Description of Multimodal Dot-Ensemble Formation | p. 54 |
| Epitaxy of GaSb/GaAs Quantum Dots | p. 56 |
| Onset and Dynamics of GaSb/GaAs Quantum-Dot Formation | p. 56 |
| Structure of GaSb/GaAs Quantum Dots | p. 58 |
| Device Applications of InGaAs Quantum Dots | p. 60 |
| Edge-Emitting Lasers | p. 60 |
| Surface-Emitting Lasers | p. 61 |
| Conclusion | p. 62 |
| References | p. 63 |
| In-Situ Monitoring for Nano-Structure Growth in MOVPE | p. 67 |
| Introduction | p. 67 |
| Reflectance | p. 69 |
| Reflectance Anisotropy Spectroscopy (RAS) | p. 71 |
| RAS Spectra and Surface Reconstruction | p. 72 |
| Monolayer Oscillations | p. 74 |
| Monitoring of Carrier Concentration | p. 79 |
| Scanning Tunneling Microscopy (STM) | p. 82 |
| Conclusion | p. 84 |
| References | p. 85 |
| Bottom-up Approach to the Nanopatterning of Si(001) | p. 87 |
| Quantum Dot Growth on Semiconductor Templates | p. 87 |
| (2 × n) Reconstruction of Si(001) | p. 88 |
| Monte Carlo Simulations on the (2 × n) Formation | p. 90 |
| Scanning Tunneling Microscopy Results | p. 92 |
| Summary and Outlook | p. 94 |
| References | p. 95 |
| Structural Characterisation of Quantum Dots by X-Ray Diffraction and TEM | p. 97 |
| Introduction | p. 97 |
| Liquid Phase Epitaxy of SiGe/Si: A Model System for the Stranski-Krastanow Process | p. 99 |
| Dot Evolution in a Close-to-Equilibrium Regime | p. 99 |
| (In,Ga)As Quantum Dots on GaAs | p. 103 |
| Shape, Size, Strain and Composition Gradient in InGaAs QD Arrays | p. 103 |
| Chemical Composition of (In,Ga)As QDs Determined by TEM | p. 107 |
| Controlling 3D Ordering in (In,Ga)As QD Arrays through GaAs Surface Orientation | p. 109 |
| Ga(Sb,As) Quantum Dots on GaAs | p. 113 |
| Structural Characterisation of Ga(Sb,As) QDs by High-Resolution TEM Imaging | p. 117 |
| Chemical Characterisation of Ga(Sb,As) QDs by HAADF STEM Imaging | p. 118 |
| References | p. 119 |
| The Atomic Structure of Quantum Dots | p. 123 |
| Introduction | p. 123 |
| Experimental Details | p. 124 |
| STM Studies of InAs Quantum Dots on the Growth Surface | p. 124 |
| XSTM Studies of Buried Nanostructures | p. 127 |
| InAs Quantum Dots | p. 127 |
| InGaAs Quantum Dots | p. 131 |
| GaSb Quantum Dots | p. 134 |
| Conclusion | p. 135 |
| References | p. 136 |
| Theory of Excitons in InGaAs/GaAs Quantum Dots | p. 139 |
| Introduction | p. 139 |
| Interrelation of QD-Structure, Strain and Piezoelectricity, and Coulomb Interaction | p. 140 |
| The Binding Energies of the Few Particle Complexes | p. 140 |
| Method of Calculation | p. 143 |
| Calculation of Strain | p. 144 |
| Piezoelectricity and the Reduction of Lateral Symmetry | p. 145 |
| Single Particle States | p. 147 |
| Many-Particle States | p. 148 |
| The Configuration Interaction Model | p. 148 |
| Interband Spectra | p. 150 |
| The Investigated Structures: Variation of Size, Shape and Composition | p. 150 |
| The Impact of QD Size | p. 151 |
| The Role of the Piezoelectric Field | p. 153 |
| The Aspect Ratio | p. 155 |
| Vertical Aspect Ratio | p. 155 |
| Lateral Aspect Ratio | p. 157 |
| Different Composition Profiles | p. 157 |
| Inverted Cone-Like Composition Profile | p. 157 |
| Annealed QDs | p. 159 |
| InGaAs QDs with Uniform Composition | p. 159 |
| Correlation vs. QD Size, Shape and Particle Type | p. 159 |
| Conclusions | p. 162 |
| References | p. 163 |
| Phonons in Quantum Dots and Their Role in Exciton Dephasing | p. 165 |
| Introduction | p. 165 |
| Structural Properties of Semiconductor Nanostructures | p. 166 |
| Theory of Acoustic Phonons in Quantum Dots | p. 166 |
| Continuum Elasticity Model of Phonons | p. 167 |
| Phonons in Quantum Dots | p. 170 |
| Exciton-Acoustic Phonon Coupling in Quantum Dots | p. 171 |
| Dephasing of the Exciton Polarization in Quantum Dots | p. 173 |
| Single Exciton Level: Independent Boson Model | p. 174 |
| Multilevel System: Real and Virtual Phonon-Assisted Transitions | p. 176 |
| Application to Coupled Quantum Dots | p. 182 |
| Summary | p. 184 |
| References | p. 185 |
| Theory of the Optical Response of Single and Coupled Semiconductor Quantum Dots | p. 189 |
| Introduction | p. 189 |
| Theory | p. 190 |
| Quantum Dot Model | p. 190 |
| Hamiltonian | p. 191 |
| Mathematical Formalisms | p. 193 |
| Single Quantum Dot Response | p. 196 |
| Linear Absorption Spectra and Quantum Optics | p. 196 |
| Semiclassical Nonlinear Dynamics | p. 199 |
| Two Coupled Quantum Dots | p. 201 |
| Absorption Spectra | p. 202 |
| Excitation Transfer | p. 202 |
| Rabi Oscillations | p. 203 |
| Pump-Probe/Differential Transmission Spectra | p. 204 |
| Multiple Quantum Dots | p. 205 |
| Four-Wave-Mixing: Photon Echo in Quantum Dot Ensembles | p. 205 |
| Absorption of Multiple Coupled Quantum Dots | p. 205 |
| Energy Transfer of Multiple Coupled Quantum Dots | p. 206 |
| Conclusion | p. 206 |
| References | p. 207 |
| Theory of Nonlinear Transport for Ensembles of Quantum Dots | p. 211 |
| Introduction | p. 211 |
| Coulomb Interaction within a Quantum Dot Layer | p. 211 |
| Transport in Quantum Dot Stacks | p. 213 |
| Current Fluctuations and Shot Noise | p. 214 |
| Full Counting Statistics and Decoherence in Coupled Quantum Dots | p. 216 |
| Conclusion | p. 218 |
| References | p. 219 |
| Quantum Dots for Memories | p. 221 |
| Introduction | p. 221 |
| Semiconductor Memories | p. 222 |
| Dynamic Random Access Memory (DRAM) | p. 222 |
| Nonvolatile Semiconductor Memories (Flash) | p. 223 |
| A QD-based Memory Cell | p. 224 |
| Charge Carrier Storage in Quantum Dots | p. 226 |
| Experimental Technique | p. 226 |
| Carrier Storage in InGaAs/GaAs Quantum Dots | p. 228 |
| Hole Storage in GaSb/GaAs Quantum Dots | p. 229 |
| InGaAs/GaAs Quantum Dots with Additional AlGaAs Barrier | p. 230 |
| Conclusion and Outlook | p. 233 |
| References | p. 235 |
| Visible-Bandgap II-VI Quantum Dot Heterostructures | p. 237 |
| Introduction | p. 237 |
| Epitaxial Growth | p. 238 |
| Few-Particles States and Their Fine Structure | p. 241 |
| Excitons and Biexcitons | p. 241 |
| Trions in Charged Quantum Dots | p. 243 |
| Coherent Control of the Exciton-Biexciton System | p. 245 |
| Spin Relaxation of Excitons, Holes, and Electrons | p. 247 |
| Exciton Quantum Coherence | p. 247 |
| Hole Spin Lifetime | p. 248 |
| Spin Dynamics of the Resident Electron | p. 249 |
| Diluted Magnetic Quantum Dots | p. 251 |
| References | p. 253 |
| Narrow-Gap Nanostructures in Strong Magnetic Fields | p. 255 |
| Introduction | p. 255 |
| Materials: HgSe/HgSe: Fe | p. 256 |
| Fabrication of HgSe/HgSe: Fe Nanostructures | p. 256 |
| Quantum Wells | p. 257 |
| Roof-Ridge Quantum Wires | p. 258 |
| Quantum Dots | p. 259 |
| Electronic Characterization of the HgSe/HgSe: Fe Nano-Structures in Strong Magnetic Fields | p. 262 |
| High-Field Magneto Transport | p. 262 |
| Infrared Magneto-Resonance Spectroscopy | p. 263 |
| Summary | p. 267 |
| References | p. 267 |
| Optical Properties of III-V Quantum Dots | p. 269 |
| Introduction | p. 269 |
| Confined States and Many-Particle Effects | p. 270 |
| Renormalization | p. 270 |
| Phonon Interaction | p. 274 |
| Electronic Tuning by Strain Engineering | p. 276 |
| Multimodal InAs/GaAs Quantum Dots | p. 278 |
| Single InAs/GaAs Quantum Dots | p. 281 |
| Spectral Diffusion | p. 281 |
| Size-Dependent Anisotropic Exchange Interaction | p. 282 |
| Binding Energies of Excitonic Complexes | p. 285 |
| Data Storage Using Confined Trions | p. 286 |
| Electronic Tuning by Annealing | p. 287 |
| Optical Properties of InGaN/GaN Quantum Dots | p. 288 |
| Time-Resolved Studies on Quantum Dot Ensembles | p. 289 |
| Single-Dot Spectroscopy | p. 292 |
| Summary | p. 296 |
| References | p. 298 |
| Ultrafast Coherent Spectroscopy of Single Semiconductor Quantum Dots | p. 301 |
| Introduction | p. 301 |
| Interface Quantum Dots | p. 303 |
| Coherent Spectroscopy of Interface Quantum Dots: Experimental Technique | p. 305 |
| Coherent Control in Single Interface Quantum Dots | p. 308 |
| Ultrafast Optical Nonlinearities of Single Interface Quantum Dots | p. 308 |
| Rabi Oscillations in a Quantum Dot | p. 312 |
| Optical Stark Effect: Ultrafast Control of Single Exciton Polarizations | p. 315 |
| Coupling Two Quantum Dots via the Dipole-Dipole Interaction | p. 319 |
| Summary and Conclusions | p. 323 |
| References | p. 325 |
| Single-Photon Generation from Single Quantum Dots | p. 329 |
| Introduction | p. 329 |
| Single Quantum Dots as Single-Photon Emitters | p. 331 |
| Photon Statistics of Single-Photon Emitters | p. 331 |
| Micro-Photoluminescence | p. 332 |
| Single Photons from InP Quantum Dots | p. 333 |
| Multiphoton Emission from Single Quantum Dots | p. 334 |
| Realization of the Ultimate Limit of a Light Emitting Diode | p. 339 |
| Applications in Quantum Information Processing | p. 343 |
| Quantum Key Distribution | p. 343 |
| Quantum Computing | p. 344 |
| Outlook | p. 346 |
| References | p. 347 |
| Index | p. 351 |
| Table of Contents provided by Publisher. All Rights Reserved. |
ISBN: 9783540778981
ISBN-10: 3540778985
Series: NanoScience and Technology
Published: 18th June 2008
Format: Hardcover
Language: English
Number of Pages: 380
Audience: Professional and Scholarly
Publisher: Springer Nature B.V.
Country of Publication: GB
Dimensions (cm): 23.5 x 15.5 x 3.18
Weight (kg): 0.79
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