RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors

Preface; Chapter 1 - Introduction; 1.1 Overview of III-V Compound Semiconductor Devices; 1.2 RF/Microwave Device and Circuit CAD; 1.3 Organization of This Book; Chapter 2 - Representation of Microwave Two-Port Network; 2.1 Signal Parameters; 2.2 S- and T-parameters; 2.3 Representation of Noisy Two-Port Network; 2.4 Interconnections of Two-Port Network; 2.5 Relationship between Three-Port and Two-Port; 2.6 PI- and T-type Networks; 2.7 Summary; Chapter 3 - Microwave and RF Measurement Techniques; 3.1 S-parameters Measurement; 3.2 Noise Measurement Technique; 3.3 Power Measurement System; 3.4 Summary; Chapter 4 - FET Small Signal Modeling and Parameter Extraction; 4.1 HEMT Device; 4.2 Small Signal Modeling; 4.3 PHEMT Device Structure; 4.4 Extraction Method of Pad Capacitances; 4.5 Extraction Method of Extrinsic Inductances; 4.6 Extraction Method of Extrinsic Resistance; 4.7 Intrinsic Parameters; 4.8 Scalable Small Signal Model; 4.9 Semi-Analysis Method; 4.10 Modeling up to 110 GHz; 4.11 Summary; Chapter 5 - FET Nonlinear Modeling and Parameter Extraction; 5.1 Introduction; 5.2 Example of Compact Modeling Technique; 5.3 Summary; Chapter 6 - Microwave Noise Modeling and Parameter Extraction Technique for FETs; 6.1 Overview of Noise Model; 6.2 Scalable Noise Model; 6.3 Noise Parameters Extraction Method; 6.4 Relationships among CS, CG, and CD FETs; 6.5 Summary; Chapter 7 - Artificial Neural Network Modeling Technique for FET; 7.1 Overview of ANN Modeling Technique; 7.2 ANN-Based Linear Modeling; 7.3 ANN-Based Nonlinear Modeling; 7.4 ANN-Based Noise Modeling; 7.5 ANN Integration and Differential Technique.