| Preface | p. v |
| Ion-Stimulated Processes | p. 1 |
| Interaction of Light Ions with Single-Crystalline Semiconductors | p. 1 |
| Elastic collisions | p. 4 |
| Inelastic collisions | p. 9 |
| Radiation defect formation in semiconductors under the influence of accelerated ions | p. 12 |
| Proton Enhanced Diffusion | p. 16 |
| Dopant redistribution in semiconductors under high temperature proton irradiation | p. 16 |
| Detecting of the proton-enhanced diffusion | p. 16 |
| Theoretical presentations about the influence of the proton irradiation on the impurity diffusion in semiconductors | p. 22 |
| Vacancy model of the enhanced impurity diffusion | p. 25 |
| Two flux model of proton-enhanced diffusion | p. 31 |
| Proton-enhanced diffusion of ionized impurities | p. 38 |
| Applied aspects of proton enhanced diffusion | p. 50 |
| Proton enhanced diffusion in the quantum-scale heterostructures | p. 51 |
| Near-surface proton enhanced diffusion | p. 53 |
| Long-distance effects by proton enhanced diffusion | p. 57 |
| Impurity diffusion into a preliminarily irradiated semiconductor crystal | p. 60 |
| Processes of Ion Beam Mixing | p. 72 |
| Theoretical concepts of the physics of radiation enhanced processes at the metal-semiconductor interface | p. 72 |
| Ion implantation-stimulated processes of the formation of chemical compounds | p. 76 |
| Quantum well and quantum dot proton irradiation-induced intermixing | p. 83 |
| Transmutation Doping of Semiconductors by Charged Particles | p. 86 |
| Nuclear Reactions Involving Charged Particles | p. 87 |
| Simulation of Transmutation Doping by Charged Particles | p. 88 |
| Experimental Investigation of Transmutation Doping by Charged Particles | p. 96 |
| Silicon | p. 97 |
| Semiconductor compounds A[superscript III] B[superscript V] | p. 100 |
| Other materials | p. 106 |
| Potential of the Method of Transmutation Doping with Charged Particles in the Technology of Semiconductor Devices | p. 109 |
| Doping of Semiconductors using Radiation Defects | p. 112 |
| Doping of Gallium Arsenide and Other III-V Semiconductors | p. 112 |
| Production of radiation defects in gallium arsenide | p. 113 |
| Radiation defect formation in indium phosphide | p. 122 |
| Effect of proton irradiation on the electrical properties of III-V compounds | p. 125 |
| Prospects of using proton irradiation for the development of semiconductor devices based on III-V compounds | p. 136 |
| Doping of Silicon with Radiation Defects | p. 143 |
| Radiation defects in silicon irradiated with protons and alpha particles | p. 143 |
| Energy levels of radiation defects in silicon irradiated with protons and alpha particles | p. 144 |
| Production rates and concentration profiles of radiation defects in silicon irradiated with protons and alpha particles | p. 151 |
| Implementation of radiation with protons and alpha particles in the technology of Si-based devices | p. 158 |
| Doping of Narrow Bandgap Semiconductors with Radiation Defects | p. 166 |
| Doping of Wide Bandgap Semiconductors with Radiation Defects | p. 170 |
| Radiation-induced defects in GaN and related compounds | p. 170 |
| Doping of SiC with radiation defects | p. 180 |
| Formation of Buried Porous and Damaged Layers | p. 188 |
| Formation of Buried Nanoscale Porous Layers in Semiconductors | p. 188 |
| Use of the Porous Layers in the Technology of Semiconductor Devices | p. 195 |
| "Smart-Cut "technology | p. 195 |
| Gettering of impurities by porous layers | p. 223 |
| Proton beam micromachining | p. 228 |
| References | p. 230 |
| Index | p. 252 |
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