Radiation Defect Engineering

By: Kozlovski Vitali, Abrosimova Vera

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Hardcover | 21 November 2005

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264 Pages

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25.4 x 16.7 x 2.2

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The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.

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Preface	p. v
Ion-Stimulated Processes	p. 1
Interaction of Light Ions with Single-Crystalline Semiconductors	p. 1
Elastic collisions	p. 4
Inelastic collisions	p. 9
Radiation defect formation in semiconductors under the influence of accelerated ions	p. 12
Proton Enhanced Diffusion	p. 16
Dopant redistribution in semiconductors under high temperature proton irradiation	p. 16
Detecting of the proton-enhanced diffusion	p. 16
Theoretical presentations about the influence of the proton irradiation on the impurity diffusion in semiconductors	p. 22
Vacancy model of the enhanced impurity diffusion	p. 25
Two flux model of proton-enhanced diffusion	p. 31
Proton-enhanced diffusion of ionized impurities	p. 38
Applied aspects of proton enhanced diffusion	p. 50
Proton enhanced diffusion in the quantum-scale heterostructures	p. 51
Near-surface proton enhanced diffusion	p. 53
Long-distance effects by proton enhanced diffusion	p. 57
Impurity diffusion into a preliminarily irradiated semiconductor crystal	p. 60
Processes of Ion Beam Mixing	p. 72
Theoretical concepts of the physics of radiation enhanced processes at the metal-semiconductor interface	p. 72
Ion implantation-stimulated processes of the formation of chemical compounds	p. 76
Quantum well and quantum dot proton irradiation-induced intermixing	p. 83
Transmutation Doping of Semiconductors by Charged Particles	p. 86
Nuclear Reactions Involving Charged Particles	p. 87
Simulation of Transmutation Doping by Charged Particles	p. 88
Experimental Investigation of Transmutation Doping by Charged Particles	p. 96
Silicon	p. 97
Semiconductor compounds A[superscript III] B[superscript V]	p. 100
Other materials	p. 106
Potential of the Method of Transmutation Doping with Charged Particles in the Technology of Semiconductor Devices	p. 109
Doping of Semiconductors using Radiation Defects	p. 112
Doping of Gallium Arsenide and Other III-V Semiconductors	p. 112
Production of radiation defects in gallium arsenide	p. 113
Radiation defect formation in indium phosphide	p. 122
Effect of proton irradiation on the electrical properties of III-V compounds	p. 125
Prospects of using proton irradiation for the development of semiconductor devices based on III-V compounds	p. 136
Doping of Silicon with Radiation Defects	p. 143
Radiation defects in silicon irradiated with protons and alpha particles	p. 143
Energy levels of radiation defects in silicon irradiated with protons and alpha particles	p. 144
Production rates and concentration profiles of radiation defects in silicon irradiated with protons and alpha particles	p. 151
Implementation of radiation with protons and alpha particles in the technology of Si-based devices	p. 158
Doping of Narrow Bandgap Semiconductors with Radiation Defects	p. 166
Doping of Wide Bandgap Semiconductors with Radiation Defects	p. 170
Radiation-induced defects in GaN and related compounds	p. 170
Doping of SiC with radiation defects	p. 180
Formation of Buried Porous and Damaged Layers	p. 188
Formation of Buried Nanoscale Porous Layers in Semiconductors	p. 188
Use of the Porous Layers in the Technology of Semiconductor Devices	p. 195
"Smart-Cut "technology	p. 195
Gettering of impurities by porous layers	p. 223
Proton beam micromachining	p. 228
References	p. 230
Index	p. 252
Table of Contents provided by Ingram. All Rights Reserved.

Radiation Defect Engineering

At a Glance

Hardcover

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Defective items

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