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POWER MICROELECTRONICS

Device and Process Technologies

By: LIANG YUNG C

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Hardcover | 22 May 2009

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Hardcover
430 Pages

Dimensions(cm)
22.86 x 15.24 x 2.39

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Published: 15th March 2017

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This descriptive textbook provides an in-depth look at the theories and process technologies necessary for understanding modern power semiconductor devices, i.e. from the fundamentals of junction electrostatics, p-n junction devices, unipolar MOSFET, bipolar IGBT, and superjunction devices to their associated silicon wafer process technology. State-of-the-art devices based on current research and development are included in the book to widen the scope for future device generation. The detailed structure and performance merit of the devices are also presented, together with laboratory measurements and SEM photographs. Examples used in the book are based mainly on actual fabricated devices, with the process steps described in clear detail. This book is useful for senior-year undergraduate courses on power semiconductor or power electronic devices, as well as for graduate-level courses, especially those focusing on advanced device development and design aspects. Device designers and researchers will also find this book a good reference in their work.

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Non-Fiction Engineering & Technology Technology in General Electronics & Communications Engineering Electronics Engineering Electronic Devices & Materials Semi-Conductors & Super-Conductors Energy Technology & Engineering Electrical Engineering Booktopia Publisher Services World Scientific Publishing

Acknowledgement	p. V
Introduction	p. 1
Carrier Physics and Junction Electrostatics	p. 3
Introduction	p. 3
Crystal Structure and Energy Bands	p. 3
Carrier Concentration and Fermi Level	p. 10
Intrinsic Semiconductor	p. 13
Extrinsic Semiconductor	p. 15
Carrier Transport	p. 17
Carrier Drift	p. 18
Carrier Diffusion	p. 23
Resistivity	p. 24
Bandgap Reduction	p. 25
Carrier Recombination	p. 29
Carrier Lifetime	p. 34
Carrier Lifetime Control	p. 36
Auger Recombination	p. 44
Basic Equations in Semiconductor	p. 45
p-n Junction Electrostatics	p. 47
Junction Breakdown Phenomena	p. 51
Abrupt p+-n Junction	p. 55
Linearly Graded Junction	p. 57
Punchthrough Phenomenon	p. 59
Junction Termination	p. 62
Cylindrical Junction	p. 63
Spherical Junction	p. 65
Floating Field Ring	p. 66
Etched Contour Termination	p. 68
Bevelled Edge Termination	p. 69
Field Plate	p. 72
Junction Termination Extension	p. 72
SIPOS (Semi-insulating Polycrystalline Silicon) Termination	p. 73
Summary	p. 74
Bipolar Junction Diode	p. 78
Introduction	p. 78
Basic Junction Diode Theory	p. 81
Forward Conduction	p. 81
Short-base Diode	p. 83
Junction Capacitance	p. 85
High-Voltage p+-n--n+ Diode	p. 87
Forward Conduction	p. 88
Reverse Blocking	p. 95
Temperature Effect	p. 96
Schottky Barrier Diode	p. 103
Forward Conduction	p. 106
Reverse Blocking	p. 109
Ohmic Contact	p. 111
GaAs and SiC Power Diodes	p. 114
Switching Characteristics	p. 119
Turn-on Transient	p. 120
Turn-off Transient	p. 123
MPS (Merged p-i-n/Schottky) Diode	p. 127
Smart-Power Integrated Synchronous Rectifier	p. 128
Summary	p. 136
Power Metal-Oxide-Semiconductor Field-Effect Transistor	p. 141
Introduction	p. 141
Basic MOS Physics	p. 142
Flat-band State	p. 144
Accumulation State	p. 144
Depletion State	p. 144
Inversion State	p. 146
MOS Capacitance	p. 147
Threshold Voltage	p. 149
Static Characteristics	p. 151
Linear Region Operation	p. 154
Saturation Region Operation	p. 157
Mobility Degradation	p. 158
Forward Blocking	p. 159
Switching Characteristics	p. 159
Turn-on Transient	p. 159
Turn-off Transient	p. 162
Gate Charge	p. 165
High-frequency Operation	p. 166
Parasitic Body Diode	p. 167
dv/dt Limit	p. 167
Dummy-Gated Structure	p. 169
Folded Gate Structure	p. 171
Lateral Radio Frequency (RF) Power MOSFET	p. 172
Graded Gate	p. 173
Stepped Lateral Double Diffusion	p. 174
Partial Silicon-on-Insulator Platform	p. 175
Partial SOI Platform Formation	p. 177
Parallel and Series Operations	p. 180
Gate Drive Circuits	p. 183
Insulated-Gate Bipolar Transistor	p. 189
Introduction	p. 189
Device Structure and Current-Voltage Characteristics	p. 191
Forward Conduction Characteristics	p. 193
Output Resistance	p. 197
Switching Characteristics	p. 198
Latch-up	p. 200
Temperature Effects	p. 203
Series and Parallel Operations	p. 204
Device Operations under Soft-switching	p. 205
Dual-Gate IGBT for ZV Soft-Switching	p. 207
Lateral IGBT Structure	p. 209
Integrated Current Sensor	p. 211
Fabrication Aspects	p. 215
Performances	p. 216
Safe Operating Area	p. 221
Overcurrent Protection	p. 222
Vertical IGBT Fabrication Process	p. 229
Related MOS-Bipolar Structures	p. 230
Emitter Switched Thyristor (EST)	p. 230
Base-Resistance-Controlled Thyristor (BRT)	p. 238
Injection-Enhanced Insulated-Gate Bipolar Transistor (IEGT)	p. 243
MOS-Controlled Thyristor (MCT)	p. 243
Superjunction Structures	p. 248
Introduction	p. 248
The Unipolar Ideal Silicon Limit	p. 249
The Superjunction Structure	p. 252
SJ Electric Field Profiles	p. 257
Charge Imbalance	p. 259
Fabrication Technologies	p. 259
Practical SJ Performance	p. 263
The Practical Concentration Equation	p. 274
Practical SJ Performance Equation	p. 276
Polysilicon Flanked VDMOS (PF VDMOS)	p. 277
Oxide Bypassed (OB)SJ MOSFET	p. 280
Graded Doping in Drift Region	p. 288
Tunable Oxide Bypassed MOSFETs	p. 290
Gradient Oxide Bypassed (GOB) Structure	p. 297
Lateral Superjunction Power MOSFET	p. 301
Device Process Technology	p. 304
Fabrication and Modeling of Power Devices	p. 310
Unit Process Steps	p. 310
Lithography	p. 310
Etching	p. 313
Deposition	p. 314
Oxidation	p. 315
Ion Implantation	p. 318
Epitaxy	p. 323
Diffusion	p. 323
Basic Models for the Simulation of Unit Process Steps	p. 326
Thermal Oxidation Models	p. 326
Diffusion Models	p. 328
Ion Implantation Models	p. 329
Optical Lithography	p. 330
Etching	p. 332
Deposition	p. 333
Advances in the Processes for Power Devices	p. 333
Modifications to Improve Gate Oxide Reliability and Breakdown Performance	p. 333
Use of Selective Epitaxial Growth for Performance Enhancement	p. 336
Practical Case Studies in Power Devices	p. 340
Case Study I	p. 340
Process Integration to Implement PFVDMOS Device	p. 341
Simulation and Process Parameter Determination of PFVDMOS Device	p. 344
Experimental Results	p. 358
Case Study 2	p. 373
100 V TOBUMOS Fabrication	p. 374
Simulation on 100V TOBUMOS	p. 375
Process Flow and Cross-Sections	p. 377
Key Precautions in TOBUMOS Fabrication	p. 386
Device Structure and Mask Layout Design	p. 390
Mask Floorplan and Splits for 100V TOBUMOS Fabrication	p. 394
100V TOBUMOS Measurement Results and Discussions	p. 396
Investigations for Off-State Failure	p. 403
Measurement Results on New Modified TOBUMOS Fabrication	p. 407
Index	p. 411
Table of Contents provided by Ingram. All Rights Reserved.

POWER MICROELECTRONICS

Device and Process Technologies

At a Glance

New Edition

Hardcover

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You Can Find This Book In

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