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Plasma Charging Damage - Kin P. Cheung

Plasma Charging Damage

Hardcover Published: 4th October 2000
ISBN: 9781852331443
Number Of Pages: 346

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In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits.

Thin Gate-oxide Wear-out and Breakdownp. 1
Mechanism of Plasma Charging Damage Ip. 47
Mechanism of Plasma Charging Damage IIp. 99
Mechanism of Plasma Charging Damage IIIp. 169
Charging Damage Measurement I - Determination of Plasma's Ability to Cause Damagep. 205
Charging Damage Measurement II - Direct Measurement of Damagep. 245
Coping with Plasma Charging Damagep. 311
Indexp. 343
Table of Contents provided by Blackwell. All Rights Reserved.

ISBN: 9781852331443
ISBN-10: 1852331445
Audience: General
Format: Hardcover
Language: English
Number Of Pages: 346
Published: 4th October 2000
Publisher: Springer London Ltd
Country of Publication: GB
Dimensions (cm): 23.88 x 16.41  x 2.72
Weight (kg): 0.66

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