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New Developments in Semiconductor Physics : Proceedings of the International Summer School Held in Szeged, Hungary, July 1 6, 1979 - F. Beleznay

New Developments in Semiconductor Physics

Proceedings of the International Summer School Held in Szeged, Hungary, July 1 6, 1979

By: F. Beleznay (Editor), G. Ferenczi (Editor), J. Giber (Editor)

Paperback | 1 May 1980

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Low temperature photo- and magneto-transport involving impurity-phonon resonances in semiconductors.- Optically detected magnetic resonance studies of semiconductors.- Deep level spectroscopy in semicounductors by optical excitation.- Depleted layer spectroscopy.- Luminescence of chromium in gallium arsenide.- Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K.- Properties of an extended defect in GaAs.62P.38.- Large defect-lattice relaxation phenomena in solids.- Temperature dependent decay of a metastable state of systems with large impurity-lattice relaxation (CdF2 : In).- Electron-phonon interaction: Polaron transport.- Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb.- Photoluminescence in amorphous semiconductors.- Man-made semiconductor superlattices.- The localized states of interfaces and their physical models.- Cyclic cluster model (CCM) in the CNDO approximation for deep levels in covalent solids.- Is there a minimum linewidth in integrated circuits?.

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