NATO Science Series E

By: S. Coffa (Editor), F. Priolo (Editor), Emanuele Rimini (Editor)

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Hardcover | 31 October 1992

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564 Pages

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23.39 x 15.6 x 3.18

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Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.

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Preface
List of Contributors
Defect Aspects of Advanced Device Technologies	p. 3
Field Effect Analysis in Low Voltage Operation a-Si:H Thin Film Transistors with Very Thin PECVD a-SiO[subscript 2] Gate Dielectric	p. 27
Silicon and Silicon: Germanium Alloy Growth; Means and Applications	p. 33
Preparation and Characterization of Silicon Ribbons	p. 49
Rapid Thermal Chemical Vapor Deposition of Si[subscript x]Ge[subscript 1-x] Alloys on Si and SiO[subscript 2] and New Applications of Si[subscript x]Ge[subscript 1-x] Alloys in Advanced MOSFET Processes	p. 55
Kinetics and Dynamics of MBE Growth	p. 61
Effects of Near-Interface Defects on the Optical Properties of MBE Grown GaAs/AlGaAs Layers	p. 79
Optoelectric Materials	p. 83
Electrical Characteristics of PECVD Silicon Nitride/Compound Semiconductor Interfaces for Optoelectronic Device Passivation	p. 103
Fundamentals of Semiconductor Processing	p. 111
Optical Analysis of Oxygen in Epitaxial Silicon	p. 119
Electrical Properties of "Clean" and Fe-Decorated Stacking Faults in p-type Si	p. 129
On the Dirty Contacts on n-type Silicon	p. 135
Mossbauer Study of the DX-Center in Te-Implanted Al[subscript x]Ga[subscript 1-x]As	p. 141
Surface Science and Semiconductor Processing	p. 147
Lithography for Manufacturing at 0.25 Micrometer and Below	p. 153
Basic Aspects of Ion Implantation	p. 167
Trends in Ion Implantation for Semiconductor and Optical Materials Research	p. 195
Orientation Phenomena in MeV Implants of P in Si	p. 207
Deep Implants by Means of Channeling: Ion Distribution and Radiation Damage in Angle Controlled N[superscript +] Implantation in Silicon	p. 213
Dislocation Formation in Si Implanted at Elevated Temperature	p. 219
Preparation and Characterization of Thin Film Simox Materials	p. 225
The Effect of Electronic Energy Loss on Epitaxial [actual symbol not reproducible] Thin Films After Heavy Ion Irradiation and Annealing up to Room Temperature	p. 233
Structural Study of The Epitaxial Realignment of Polycrystalline Si Films onto Si Substrates	p. 239
Plasma Immersion Ion Implantation: A Perspective	p. 245
A Sheet Stress Measurement Technique Using Thin Films to Measure Stresses in Inert-Gas Implanted Silicon	p. 251
Plasma Etching Processes	p. 257
Charge Trapping, Degradation and Wearout of Thin Dielectric Layers During Electrical Stressing	p. 279
Minority Carrier Lifetime Measurements After High Temperature Pretreatment	p. 299
Copper-Based Metallization	p. 305
Thermal Stability of Ti-Mo and Ti-Cu Bilayer Thin Films on Alumina	p. 321
Hyperfine Fields in Epitaxially Grown Co on GaAs	p. 327
Titanium Nitride Process Development	p. 331
Materials Aspects and Implementation of Silicides for ULSI	p. 337
Ion Beam Synthesis of Buried Iron Disilicide	p. 363
Diffusion in Cobalt Silicide During Silicide Formation	p. 369
Formation of Germanides by Rapid Thermal Annealing and Their Applications in Advanced MOSFET Processes	p. 375
Diffusion in Crystalline Silicon and Germanium - The State of the Art in Brief	p. 383
Symmetry Methods in Diffusion	p. 403
Diffusion of Gold in Sputtered Amorphous Silicon	p. 409
Dopant Diffusion and Point Defects in Silicon During Silicidation	p. 415
Lateral Diffusion Couples and Their Contribution to Understanding Thin Film Reactions	p. 421
Diffusion and Defects in Amorphous Silicon	p. 427
EPR Study of Defects Produced by MeV Ion Implantation into Silicon	p. 445
Vacancy Character of Damage Zones in Ion-Irradiated Silicon	p. 451
Multiple Amorphous States in Ion Implanted Semiconductors (Si and InP)	p. 459
The Mechanism of Solid Phase Epitaxy	p. 465
The Amorphous Side of Solid Phase Epitaxy	p. 477
Metal-Enhanced Growth of Silicon	p. 483
Ion-Assisted Phase Transitions in Silicon	p. 501
Ion-Assisted Nucleation in Amorphous Silicon	p. 523
List of Participants	p. 529
Index	p. 535
Table of Contents provided by Blackwell. All Rights Reserved.

NATO Science Series E

At a Glance

Hardcover

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