MOSFETs

Properties, Preparations & Performance

By: Lucas M Simon, Noah T Andre

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Hardcover | 1 December 2008

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Hardcover
454 Pages

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25.9 x 18.8 x 3.3

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The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material, and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET. The width of the channel, which determines how well the device conducts, is controlled by an electrode called the gate, separated from channel by a thin layer of oxide insulation. The insulation keeps current from flowing between the gate and channel. MOSFETs are useful for high-speed switching applications and also on integrated circuits in computers.

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Non-Fiction Engineering & Technology Electronics & Communications Engineering Electronics Engineering Electronic Devices & Materials Semi-Conductors & Super-Conductors Science Chemistry

Preface
Novel Device Concepts to Overcome MOSFET Limits
Efficient Parallel Monte Carlo Simulations Using Finite Element Tetrahedral Meshes for Novel Thin-Body MOSFET Architectures
Cryogenic Operation of Power MOSFETs
Redesign and Optimisation of Semiconductor Devices and Circuits
Thin and Ultra-Thin SiO2 Gate Oxide in Metal-Oxide-Semiconductor Structors Under Electrical Stresses: Reliability Predictions and Degradation Mechanism Models
Some Medical Applications of MOSFETs in Radiation Therapy: Surface Dose and Electron Backscatter Measurements with Monte Carlo Simulations
Surrounding-Gate MOSFETs for Transistor Scaling: Devices, Fabrication and Modelling
Quantum, Self Heating and Hot Electron Effects of Si-Based Double-Gate MOSFET and GaN-Based MOS-HFET
Bulk FinFETs: Fabrication and Threshold Voltage
Discussion on 1/f Noise in CMOS Transistors: Modelling- Simulation and Measurement Techniques
A Rigorous Analysis of the Parameters Which Govern the Silc in MOSFET's with Oxide Thickness in the 1-2 Nanometer Range
Analog and Digital Circuit Functionality Under the Influence of Gate Oxide Degradation and Breakdown
MOSFET's Programmable Conductance: The Way of VLSI Implementation for Emerging Applications from Biologically Plausible Neuromorphic Devices to Mobile Communications
Index
Table of Contents provided by Publisher. All Rights Reserved.

MOSFETs

Properties, Preparations & Performance

At a Glance

Hardcover

Shipping

How to return your order

Defective items

You Can Find This Book In

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