| Preface | p. x |
| History of light-emitting diodes | p. 1 |
| History of SiC LEDs | p. 1 |
| History of GaAs and AlGaAs infrared and red LEDs | p. 4 |
| History of GaAsP LEDs | p. 8 |
| History of GaP and GaAsP LEDs doped with optically active impurities | p. 9 |
| History of GaN metal-semiconductor emitters | p. 15 |
| History of blue, green, and white LEDs based on GaInN p-n junctions | p. 17 |
| History of AlGaInP visible-spectrum LEDs | p. 19 |
| LEDs entering new fields of applications | p. 21 |
| References | p. 23 |
| Radiative and non-radiative recombination | p. 27 |
| Radiative electron-hole recombination | p. 27 |
| Radiative recombination for low-level excitation | p. 28 |
| Radiative recombination for high-level excitation | p. 32 |
| Bimolecular rate equations for quantum well structures | p. 33 |
| Luminescence decay | p. 33 |
| Non-radiative recombination in the bulk | p. 35 |
| Non-radiative recombination at surfaces | p. 41 |
| Competition between radiative and non-radiative recombination | p. 44 |
| References | p. 46 |
| Theory of radiative recombination | p. 48 |
| Quantum mechanical model of recombination | p. 48 |
| The van Roosbroeck-Shockley model | p. 50 |
| Temperature and doping dependence of recombination | p. 54 |
| The Einstein model | p. 56 |
| References | p. 57 |
| LED basics: Electrical properties | p. 59 |
| Diode current-voltage characteristic | p. 59 |
| Deviations from ideal I-V characteristic | p. 63 |
| Evaluation of diode parasitic resistances | p. 67 |
| Emission energy | p. 68 |
| Carrier distribution in p-n homojunctions | p. 69 |
| Carrier distribution in p-n heterojunctions | p. 70 |
| Effect of heterojunctions on device resistance | p. 71 |
| Carrier loss in double heterostructures | p. 75 |
| Carrier overflow in double heterostructures | p. 78 |
| Electron-blocking layers | p. 81 |
| Diode voltage | p. 83 |
| References | p. 84 |
| LED basics: Optical properties | p. 86 |
| Internal, extraction, external, and power efficiencies | p. 86 |
| Emission spectrum | p. 87 |
| The light escape cone | p. 91 |
| Radiation pattern | p. 93 |
| The lambertian emission pattern | p. 94 |
| Epoxy encapsulants | p. 97 |
| Temperature dependence of emission intensity | p. 98 |
| References | p. 100 |
| Junction and carrier temperatures | p. 101 |
| Carrier temperature and high-energy slope of spectrum | p. 101 |
| Junction temperature and peak emission wavelength | p. 103 |
| Theory of temperature dependence of diode forward voltage | p. 104 |
| Measurement of junction temperature using forward voltage | p. 108 |
| Constant-current and constant-voltage DC drive circuits | p. 110 |
| References | p. 112 |
| High internal efficiency designs | p. 113 |
| Double heterostructures | p. 113 |
| Doping of active region | p. 116 |
| p-n junction displacement | p. 118 |
| Doping of the confinement regions | p. 119 |
| Non-radiative recombination | p. 122 |
| Lattice matching | p. 123 |
| References | p. 126 |
| Design of current flow | p. 127 |
| Current-spreading layer | p. 127 |
| Theory of current spreading | p. 133 |
| Current crowding in LEDs on insulating substrates | p. 136 |
| Lateral injection schemes | p. 140 |
| Current-blocking layers | p. 142 |
| References | p. 143 |
| High extraction efficiency structures | p. 145 |
| Absorption of below-bandgap light in semiconductors | p. 145 |
| Double heterostructures | p. 149 |
| Shaping of LED dies | p. 150 |
| Textured semiconductor surfaces | p. 154 |
| Cross-shaped contacts and other contact geometries | p. 156 |
| Transparent substrate technology | p. 157 |
| Anti-reflection optical coatings | p. 159 |
| Flip-chip packaging | p. 160 |
| References | p. 161 |
| Reflectors | p. 163 |
| Metallic reflectors, reflective contacts, and transparent contacts | p. 164 |
| Total internal reflectors | p. 168 |
| Distributed Bragg reflectors | p. 170 |
| Omnidirectional reflectors | p. 181 |
| Specular and diffuse reflectors | p. 184 |
| References | p. 189 |
| Packaging | p. 191 |
| Low-power and high-power packages | p. 191 |
| Protection against electrostatic discharge (ESD) | p. 193 |
| Thermal resistance of packages | p. 195 |
| Chemistry of encapsulants | p. 196 |
| Advanced encapsulant structures | p. 198 |
| References | p. 199 |
| Visible-spectrum LEDs | p. 201 |
| The GaAsP, GaP, GaAsP:N, and GaP:N material systems | p. 201 |
| The AlGaAs/GaAs material system | p. 206 |
| The AlGaInP/GaAs material system | p. 209 |
| The GaInN material system | p. 211 |
| General characteristics of high-brightness LEDs | p. 213 |
| Optical characteristics of high-brightness LEDs | p. 216 |
| Electrical characteristics of high-brightness LEDs | p. 218 |
| References | p. 220 |
| The AlGaInN material system and ultraviolet emitters | p. 222 |
| The UV spectral range | p. 222 |
| The AlGaInN bandgap | p. 223 |
| Polarization effects in III-V nitrides | p. 224 |
| Doping activation in III-V nitrides | p. 226 |
| Dislocations in III-V nitrides | p. 227 |
| UV devices emitting at wavelengths longer than 360 nm | p. 231 |
| UV devices emitting at wavelengths shorter than 360 nm | p. 233 |
| References | p. 236 |
| Spontaneous emission from resonant cavities | p. 239 |
| Modification of spontaneous emission | p. 239 |
| Fabry-Perot resonators | p. 241 |
| Optical mode density in a one-dimensional resonator | p. 244 |
| Spectral emission enhancement | p. 248 |
| Integrated emission enhancement | p. 249 |
| Experimental emission enhancement and angular dependence | p. 251 |
| References | p. 253 |
| Resonant-cavity light-emitting diodes | p. 255 |
| Introduction and history | p. 255 |
| RCLED design rules | p. 256 |
| GaInAs/GaAs RCLEDs emitting at 930 nm | p. 260 |
| AlGaInP/GaAs RCLEDs emitting at 650 nm | p. 265 |
| Large-area photon recycling LEDs | p. 268 |
| Thresholdless lasers | p. 270 |
| Other RCLED devices | p. 271 |
| Other novel confined-photon emitters | p. 272 |
| References | p. 273 |
| Human eye sensitivity and photometric qualities | p. 275 |
| Light receptors of the human eye | p. 275 |
| Basic radiometric and photometric units | p. 277 |
| Eye sensitivity function | p. 280 |
| Colors of near-monochromatic emitters | p. 283 |
| Luminous efficacy and luminous efficiency | p. 284 |
| Brightness and linearity of human vision | p. 286 |
| Circadian rhythm and circadian sensitivity | p. 287 |
| References | p. 289 |
| Photopic eye sensitivity function | p. 290 |
| Scotopic eye sensitivity function | p. 291 |
| Colorimetry | p. 292 |
| Color-matching functions and chromaticity diagram | p. 292 |
| Color purity | p. 300 |
| LEDs in the chromaticity diagram | p. 301 |
| Relationship between chromaticity and color | p. 302 |
| References | p. 302 |
| Color-matching functions (CIE 1931) | p. 304 |
| Color-matching functions (CIE 1978) | p. 305 |
| Planckian sources and color temperature | p. 306 |
| The solar spectrum | p. 306 |
| The planckian spectrum | p. 307 |
| Color temperature and correlated color temperature | p. 309 |
| References | p. 311 |
| Planckian emitter | p. 312 |
| Color mixing and color rendering | p. 313 |
| Additive color mixing | p. 313 |
| Color rendering | p. 315 |
| Color-rendering index for planckian-locus illumination sources | p. 323 |
| Color-rendering index for non-planckian-locus illumination sources | p. 324 |
| References | p. 327 |
| Reflectivity of test-color samples | p. 328 |
| Reflectivity of test-color samples | p. 330 |
| White-light sources based on LEDs | p. 332 |
| Generation of white light with LEDs | p. 332 |
| Generation of white light by dichromatic sources | p. 333 |
| Generation of white light by trichromatic sources | p. 338 |
| Temperature dependence of trichromatic LED-based white-light source | p. 340 |
| Generation of white light by tetrachromatic and pentachromatic sources | p. 344 |
| References | p. 344 |
| White-light sources based on wavelength converters | p. 346 |
| Efficiency of wavelength-converter materials | p. 347 |
| Wavelength-converter materials | p. 349 |
| Phosphors | p. 351 |
| White LEDs based on phosphor converters | p. 353 |
| Spatial phosphor distributions | p. 355 |
| UV-pumped phosphor-based white LEDs | p. 357 |
| White LEDs based on semiconductor converters (PRS-LED) | p. 358 |
| Calculation of the power ratio of PRS-LED | p. 359 |
| Calculation of the luminous efficiency of PRS-LED | p. 361 |
| Spectrum of PRS-LED | p. 363 |
| White LEDs based on dye converters | p. 364 |
| References | p. 364 |
| Optical communication | p. 367 |
| Types of optical fibers | p. 367 |
| Attenuation in silica and plastic optical fibers | p. 369 |
| Modal dispersion in fibers | p. 371 |
| Material dispersion in fibers | p. 372 |
| Numerical aperture of fibers | p. 374 |
| Coupling with lenses | p. 376 |
| Free-space optical communication | p. 379 |
| References | p. 381 |
| Communication LEDs | p. 382 |
| LEDs for free-space communication | p. 382 |
| LEDs for fiber-optic communication | p. 382 |
| Surface-emitting Burrus-type communication LEDs emitting at 870 nm | p. 383 |
| Surface-emitting communication LEDs emitting at 1300 nm | p. 384 |
| Communication LEDs emitting at 650 nm | p. 386 |
| Edge-emitting superluminescent diodes (SLDs) | p. 388 |
| References | p. 391 |
| LED modulation characteristics | p. 393 |
| Rise and fall times, 3 dB frequency, and bandwidth in linear circuit theory | p. 393 |
| Rise and fall time in the limit of large diode capacitance | p. 395 |
| Rise and fall time in the limit of small diode capacitance | p. 396 |
| Voltage dependence of the rise and fall times | p. 397 |
| Carrier sweep-out of the active region | p. 399 |
| Current shaping | p. 400 |
| 3 dB frequency | p. 401 |
| Eye diagram | p. 401 |
| Carrier lifetime and 3 dB frequency | p. 402 |
| References | p. 403 |
| Frequently used symbols | p. 404 |
| Physical constants | p. 408 |
| Room temperature properties of III-V arsenides | p. 409 |
| Room temperature properties of III-V nitrides | p. 410 |
| Room temperature properties of III-V phosphides | p. 411 |
| Room temperature properties of Si and Ge | p. 412 |
| Periodic system of elements (basic version) | p. 413 |
| Periodic system of elements (detailed version) | p. 414 |
| Index | p. 415 |
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