| Preface | p. v |
| Table of Content | p. ix |
| Contributors | p. xv |
| The SOI MOSFET: from Single Gate to Multigate | p. 1 |
| MOSFET scaling and Moore's law | p. 1 |
| Short-Channel Effects | p. 2 |
| Gate Geometry and Electrostatic Integrity | p. 4 |
| A Brief History of Multiple-Gate MOSFETs | p. 8 |
| Single-gate SOI MOSFETs | p. 9 |
| Double-gate SOI MOSFETs | p. 11 |
| Triple-gate SOI MOSFETs | p. 12 |
| Surrounding-gate (quadruple-gate) SOI MOSFETs | p. 13 |
| Other multigate MOSFET structures | p. 14 |
| Multigate MOSFET memory devices | p. 16 |
| Multigate MOSFET Physics | p. 17 |
| Classical physics | p. 17 |
| Natural length and short-channel effects | p. 17 |
| Current drive | p. 23 |
| Corner effect | p. 26 |
| Quantum effects | p. 28 |
| Volume inversion | p. 28 |
| Mobility effects | p. 31 |
| Threshold voltage | p. 31 |
| Inter-subband scattering | p. 35 |
| References | p. 37 |
| Multigate MOSFET Technology | p. 49 |
| Introduction | p. 49 |
| Active Area: Fins | p. 52 |
| Fin Width | p. 52 |
| Fin Height and Fin Pitch | p. 57 |
| Fin Surface Crystal Orientation | p. 61 |
| Fin Surface Preparation | p. 64 |
| Fins on Bulk Silicon | p. 65 |
| Nano-wires and Self-Assembled Wires | p. 66 |
| Gate Stack | p. 70 |
| Gate Patterning | p. 70 |
| Threshold Voltage and Gate Workfunction Requirements | p. 71 |
| Polysilicon Gate | p. 74 |
| Metal Gate | p. 75 |
| Tunable Workfunction Metal Gate | p. 75 |
| Gate EWF and Gate Induced Drain Leakage (GIDL) | p. 79 |
| Independently Controlled Gates | p. 82 |
| Source/Drain Resistance and Capacitance | p. 85 |
| Doping the Thin Fins | p. 85 |
| Junction Depth | p. 87 |
| Parasitic Resistance/Capacitance and Raised Source and Drain Structure | p. 87 |
| Mobility and Strain Engineering | p. 91 |
| Introduction | p. 91 |
| Wafer Bending Experiment | p. 92 |
| Nitride Stress Liners | p. 93 |
| Embedded SiGe and SiC Source and Drain | p. 94 |
| Local Strain from Gate Electrode | p. 95 |
| Substrate Strain: Strained Silicon on Insulator | p. 97 |
| Contacts to the Fins | p. 98 |
| Dumbbell source and drain contact | p. 99 |
| Saddle contact | p. 99 |
| Contact to merged fins | p. 100 |
| Acknowledgments | p. 100 |
| References | p. 101 |
| BSIM-CMG: A Compact Model for Multi-Gate Transistors | p. 113 |
| Introduction | p. 113 |
| Framework for Multigate FET Modeling | p. 114 |
| Multigate Models: BSIM-CMG and BSIM-IMG | p. 115 |
| The BSIM-CMG Model | p. 116 |
| The BSIM-IMG Model | p. 116 |
| BSIM-CMG | p. 117 |
| Core Model | p. 117 |
| Surface Potential Model | p. 117 |
| I-V Model | p. 123 |
| C-V Model | p. 126 |
| Modeling Physical Effects of Real Devices | p. 130 |
| Quantum Mechanical Effects (QME) | p. 131 |
| Short-channel Effects (SCE) | p. 137 |
| Experimental Verification | p. 144 |
| The BSIM-IMG Model | p. 147 |
| Surface Potential of independent DG-FET | p. 147 |
| BSIM-IMG features | p. 150 |
| Summary | p. 151 |
| References | p. 151 |
| Physics of the Multigate MOS System | p. 155 |
| Device electrostatics | p. 155 |
| Double gate MOS system | p. 163 |
| Modeling assumptions | p. 163 |
| Gate voltage effect | p. 167 |
| Semiconductor thickness effect | p. 169 |
| Asymmetry effects | p. 174 |
| Oxide thickness effect | p. 178 |
| Electron tunnel current | p. 180 |
| Two-dimensional confinement | p. 184 |
| References | p. 185 |
| Mobility in Multigate MOSFETs | p. 191 |
| Introduction | p. 191 |
| Double-Gate MOSFETs and FinFETs | p. 192 |
| Phonon-limited mobility | p. 197 |
| Confinement of acoustic phonons | p. 202 |
| Interface roughness scattering | p. 205 |
| Coulomb scattering | p. 209 |
| Temperature Dependence of Mobility | p. 212 |
| Symmetrical and Asymmetrical Operation of DGSOI FETs | p. 214 |
| Crystallographic orientation | p. 218 |
| High-k dielectrics | p. 224 |
| Strained DGSOI devices | p. 226 |
| Summary | p. 232 |
| Silicon multiple-gate nanowires | p. 233 |
| Introduction | p. 233 |
| Electrostatic description of Si nanowires | p. 235 |
| Electron transport in Si nanowires | p. 239 |
| Surface roughness | p. 245 |
| Experimental results and conclusions | p. 246 |
| References | p. 247 |
| Radiation Effects in Advanced Single- and Multi-Gate SOI MOSFETs | p. 257 |
| A brief history of radiation effects in SOI | p. 257 |
| Total Ionizing Dose Effects | p. 259 |
| A brief overview of Total Ionizing Dose effects | p. 259 |
| Advanced Single-Gate FDSOI devices | p. 260 |
| Description of Advanced FDSOI Devices | p. 261 |
| Front-gate threshold voltage shift | p. 261 |
| Single-transistor latch | p. 264 |
| Advanced Multi-Gate devices | p. 266 |
| Devices and process description | p. 267 |
| Front-gate threshold voltage shift | p. 269 |
| Single-Event Effects | p. 271 |
| Background | p. 271 |
| Effect of ion track diameter in nanoscale devices | p. 274 |
| Transient measurements on single-gate and FinFET SOI transistors | p. 279 |
| Scaling effects | p. 285 |
| References | p. 287 |
| Multi-Gate MOSFET Circuit Design | p. 293 |
| Introduction | p. 293 |
| Digital Circuit Design | p. 294 |
| Impact of device performance on digital circuit design | p. 294 |
| Large-scale digital circuits | p. 302 |
| Leakage-performance trade off and energy dissipation | p. 306 |
| Multi-V[subscript T] devices and mixed-V[subscript T] circuits | p. 311 |
| High-temperature circuit operation | p. 312 |
| SRAM design | p. 313 |
| Analog Circuit Design | p. 315 |
| Device figures of merit and technology related design issues | p. 315 |
| Transconductance | p. 315 |
| Intrinsic transistor gain | p. 316 |
| Matching behavior | p. 317 |
| Flicker noise | p. 318 |
| Transit and maximum oscillation frequency | p. 319 |
| Self-heating | p. 320 |
| Charge trapping in high-k dielectrics | p. 320 |
| Design of analog building blocks | p. 321 |
| V-[subscript T]-based current reference circuit | p. 321 |
| Bandgap voltage reference | p. 322 |
| Operational amplifier | p. 324 |
| Comparator | p. 325 |
| Mixed-signal aspects | p. 326 |
| Current steering DAC | p. 327 |
| Successive approximation ADC | p. 327 |
| RF circuit design | p. 329 |
| SoC Design and Technology Aspects | p. 331 |
| Acknowledgments | p. 332 |
| References | p. 333 |
| Index | p. 336 |
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