Springer Tracts in Modern Physics

Phonons, Plasmons, and Polaritons

By: Mathias Schubert

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Hardcover | 26 November 2004

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214 Pages

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23.5 x 15.88 x 1.27

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The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry examination. Special emphasis is given to free-charge-carrier properties, and magneto-optical effects.

A broad range of experimental examples are described, including multinary alloys of zincblende and wurtzite structure semiconductor materials, and future applications such as organic layer structures and highly correlated electron systems are proposed.

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Introduction	p. 1
References	p. 4
Ellipsometry	p. 7
Jones Matrix Presentation	p. 8
Mueller Matrix Presentation	p. 9
Standard Ellipsometry	p. 11
Generalized Ellipsometry	p. 12
Brewster and Interface-Mode Conditions	p. 13
Generalized Brewster Conditions	p. 13
Generalized Interface-Mode Conditions	p. 14
Anisotropic Dielectric Function Tensor	p. 14
General Description	p. 14
Orthogonal Rotations	p. 15
Bond Polarizability Model	p. 16
Light Propagation in Layered Anisotropic Media	p. 18
Ellipsometry Data Analysis	p. 20
Thickness and Dielectric Function	p. 20
Wavelength-by-Wavelength Fit	p. 21
Parameterized Model Fit	p. 21
Ellipsometry Test Functions	p. 22
Parameter Accessibility	p. 23
Infrared Ellipsometry	p. 23
References	p. 27
Infrared Model Dielectric Functions	p. 31
Polar Lattice Resonance Contributions	p. 31
Free-Charge-Carrier Contributions	p. 35
Low-Polarity Mode Contributions	p. 38
Free-Charge-Carrier Magneto-Optic Contributions	p. 39
References	p. 42
Polaritons in Semiconductor Layer Structures	p. 45
Bulk Polaritons	p. 45
Dispersion Relation	p. 45
Example: i-GaAs	p. 47
Surface Polaritons and Surface Guided Waves	p. 48
Dispersion Relation	p. 50
Example: i-GaAs Film on n-GaAs Substrate	p. 52
The Berreman Effect	p. 62
References	p. 64
Anisotropic Substrates	p. 67
Bands of Total Reflection	p. 68
Sapphire (Hexagonal)	p. 70
Stibnite (Orthorhombic)	p. 76
References	p. 79
Zincblende-Structure Materials (III-V)	p. 81
Free Charge Carriers (p-Type GaAs)	p. 81
Alloying (AlGaInP)	p. 85
Ordering (AlGaInP)	p. 90
Strain and Composition (GaNP, GaInAsN)	p. 96
GaNP/GaP	p. 96
InGaNAs/GaAs	p. 100
References	p. 104
Wurtzite-Structure Materials (Group-III Nitrides, ZnO)	p. 109
Crystal Quality: Bulk and Epilayer (ZnO)	p. 112
Total-Reflection-Bands and Dielectric Anisotropy (ZnO)	p. 116
Epitaxial Relationship (ZnO)	p. 117
Free Charge Carriers (p- and n-Type GaN)	p. 123
Strain and Alloying (InAlN)	p. 128
Device Heterostructures (Group-III Nitrides)	p. 133
References	p. 143
Magneto-Optic Ellipsometry	p. 147
Experimental Setups	p. 149
Polar MO Setup: Example	p. 150
Oblique MO Setup: Example	p. 152
Experiments	p. 153
i-GaAs(d)/n-GaAs	p. 154
n-B_0.03In_0.06Ga_0.91As(d)/ihyphen;GaAs	p. 159
n-GaAs(d)/n-Al_0.19Ga_0.33In_0.48P(d)/i-GaAs	p. 160
References	p. 163
4×4 Transfer Matrix T_p for Isotropic Films	p. 165
References	p. 167
4×4 Transfer Matrix T_pfor Dielectric Homogeneous Films	p. 169
References	p. 170
4×4 Transfer Matrix T_p for Magneto-optic Films	p. 171
References	p. 172
4×4 Transfer Matrix T_p for Dielectric Helical Films	p. 173
References	p. 178
TM Waves at the Interface Between Two Half-Infinite Media	p. 181
References	p. 183
TM Waves at Two Stratified Interfaces	p. 185
References	p. 190
Index	p. 191
Table of Contents provided by Publisher. All Rights Reserved.

Springer Tracts in Modern Physics

Phonons, Plasmons, and Polaritons

At a Glance

Hardcover

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Defective items

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