| Preface | p. v |
| Introduction to Infrared Spectroscopy | p. 1 |
| Vibrational spectroscopy | p. 1 |
| Infrared spectroscopy and Raman spectroscopy | p. 2 |
| Limitations of selection rules | p. 3 |
| Overtones and combinations | p. 3 |
| Conventional instrumentation for infrared spectroscopy | p. 4 |
| Fourier Transform Infrared (FTIR) Spectrometer | p. 4 |
| Advantages of FTIR over conventional DIR | p. 5 |
| Definitions of common terms in infrared spectroscopy | p. 6 |
| Elementary methods of quantitative analysis for infrared spectroscopy | p. 7 |
| Reflectance infrared measurement | p. 7 |
| Attenuated total reflection (ATR) infrared measurement | p. 9 |
| Reflection absorption infrared measurement | p. 11 |
| References | p. 13 |
| The Properties of Infrared Transparent Substrates | p. 15 |
| The significance of substrates in infrared spectroscopy | p. 15 |
| Different types of infrared transparent substrates | p. 15 |
| Factors that affect the infrared transparency of silicon | p. 16 |
| Recommendations to reduce substrate effects | p. 22 |
| References | p. 23 |
| The Measurement of Oxygen and Carbon and Other Impurities in Silicon | p. 25 |
| Introduction | p. 25 |
| Oxygen in silicon wafers | p. 25 |
| Carbon in silicon wafers | p. 26 |
| The measurement of interstitial oxygen in silicon | p. 27 |
| The measurement of substitutional carbon in silicon | p. 28 |
| The determination of the absorption coefficient [alpha] for oxygen and carbon in silicon | p. 28 |
| Limitations of the infrared method | p. 30 |
| The infrared characterization of oxygen precipitates and thermal donors | p. 31 |
| Carbon-oxygen complexes in silicon | p. 32 |
| Nitrogen in silicon | p. 35 |
| Shallow impurities in silicon | p. 36 |
| Hydrogen in silicon | p. 36 |
| The application of infrared spectroscopy to polysilicon | p. 38 |
| Carbon and oxygen in gallium arsenide | p. 41 |
| Summary | p. 41 |
| References | p. 41 |
| The Measurement of Epitaxial Layer Thickness | p. 45 |
| Introduction | p. 45 |
| Optical interference in epitaxial layers | p. 47 |
| Algorithm to measure the thickness of silicon epitaxial layers for a dispersive infrared spectrometer | p. 47 |
| Measurement of epitaxial layer thickness by a reflectance FTIR spectrometer | p. 48 |
| Emission FTIR for insitu measurement of epilayer thicker during the epitaxy process | p. 50 |
| References | p. 53 |
| The Characterization of Silicon Dioxide and Silicon Nitride Thin Films | p. 55 |
| Introduction | p. 55 |
| The application of infrared spectroscopy to silicon dioxide films | p. 56 |
| Silicon dioxide films grown by thermal oxidation | p. 56 |
| Nitrided silicon dioxide films | p. 61 |
| PECVD silicon dioxide films | p. 63 |
| Silicon dioxide films deposited by the O[subscript 3]/TEOS CVD technique | p. 65 |
| Fluorine-doped silicon dioxide films | p. 66 |
| The application of infrared spectroscopy to silicon nitride films | p. 72 |
| Hydrogen in PECVD silicon nitride | p. 72 |
| The application of infrared spectroscopy to silicon-rich and nitrogen-rich PECVD silicon nitride | p. 76 |
| The application of infrared spectroscopy to ECR PECVD silicon nitride films | p. 77 |
| CVD silicon nitride | p. 78 |
| The application of infrared spectroscopy to silicon oxynitride films | p. 80 |
| Summary | p. 80 |
| References | p. 82 |
| The Characterization of PSG, BPSG, SOG and Other Glasses | p. 87 |
| Introduction | p. 87 |
| Phosphorus content in PSG | p. 88 |
| Boron content and phosphorus content in BPSG | p. 90 |
| Stabilization of PSG and BPSG by annealing | p. 94 |
| The detection of moisture penetration through silicon oxynitride passivation by infrared spectroscopy on PSG below passivation | p. 94 |
| The application of infrared spectroscopy to spin-on-glass (SOG) | p. 97 |
| The application of infrared spectroscopy to other glasses used in microelectronics | p. 101 |
| Summary | p. 102 |
| References | p. 102 |
| The Characterization of Amorphous Silicon and Related Materials | p. 105 |
| Introduction | p. 105 |
| Hydrogen content and bonding in hydrogenated amorphous silicon | p. 106 |
| The application of infrared spectroscopy to hydrogenated amorphous silicon-germanium | p. 109 |
| The application of infrared spectroscopy to hydrogenated amorphous silicon-carbide | p. 112 |
| The application of infrared spectroscopy to diamond like carbon films | p. 115 |
| Diamond films | p. 118 |
| Boron nitride films | p. 118 |
| Porous silicon films | p. 120 |
| Microcrystalline silicon and related materials | p. 121 |
| References | p. 122 |
| Miscellaneous Applications of Infrared Spectroscopy to Microelectronics | p. 125 |
| Introduction | p. 125 |
| The application of infrared spectroscopy to polyimides | p. 125 |
| The application of infrared spectroscopy to silicon-on-insulator (SOI) and bonded silicon wafers | p. 127 |
| Simox | p. 128 |
| The bonding of Si wafers | p. 129 |
| The application of infrared spectroscopy to study the surface physics of silicon | p. 130 |
| The application of infrared spectroscopy to study the cleaning of silicon | p. 133 |
| The measurement of carbon, oxygen and other impurities in gallium arsenide | p. 133 |
| The measurement of EL2 in semi-insulating gallium arsenide | p. 138 |
| Hydrogen passivation in III-V semiconductors | p. 141 |
| Hydrogen passivation in II-VI semiconductors | p. 143 |
| Detection of crystalline defects by infrared light scattering tomography | p. 145 |
| The application of infrared spectroscopy to microelectronics processing | p. 149 |
| Conclusion of the book | p. 150 |
| References | p. 150 |
| Appendix A | p. 155 |
| Index | p. 159 |
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