Infrared Characterization For Microelectronics

By: Wai Shing Lau

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Hardcover | 4 October 1999

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172 Pages

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22.86 x 15.88 x 1.91

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The focus of this text is on practical applications useful to the production line and to the research and development of microelectronics. The background knowledge and significance of doing a particular type of infrared measurement is discussed in detail. The principal purpose of the book is to serve as a useful handbook for practising engineers and scientists in the field of microelectronics.

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Preface	p. v
Introduction to Infrared Spectroscopy	p. 1
Vibrational spectroscopy	p. 1
Infrared spectroscopy and Raman spectroscopy	p. 2
Limitations of selection rules	p. 3
Overtones and combinations	p. 3
Conventional instrumentation for infrared spectroscopy	p. 4
Fourier Transform Infrared (FTIR) Spectrometer	p. 4
Advantages of FTIR over conventional DIR	p. 5
Definitions of common terms in infrared spectroscopy	p. 6
Elementary methods of quantitative analysis for infrared spectroscopy	p. 7
Reflectance infrared measurement	p. 7
Attenuated total reflection (ATR) infrared measurement	p. 9
Reflection absorption infrared measurement	p. 11
References	p. 13
The Properties of Infrared Transparent Substrates	p. 15
The significance of substrates in infrared spectroscopy	p. 15
Different types of infrared transparent substrates	p. 15
Factors that affect the infrared transparency of silicon	p. 16
Recommendations to reduce substrate effects	p. 22
References	p. 23
The Measurement of Oxygen and Carbon and Other Impurities in Silicon	p. 25
Introduction	p. 25
Oxygen in silicon wafers	p. 25
Carbon in silicon wafers	p. 26
The measurement of interstitial oxygen in silicon	p. 27
The measurement of substitutional carbon in silicon	p. 28
The determination of the absorption coefficient [alpha] for oxygen and carbon in silicon	p. 28
Limitations of the infrared method	p. 30
The infrared characterization of oxygen precipitates and thermal donors	p. 31
Carbon-oxygen complexes in silicon	p. 32
Nitrogen in silicon	p. 35
Shallow impurities in silicon	p. 36
Hydrogen in silicon	p. 36
The application of infrared spectroscopy to polysilicon	p. 38
Carbon and oxygen in gallium arsenide	p. 41
Summary	p. 41
References	p. 41
The Measurement of Epitaxial Layer Thickness	p. 45
Introduction	p. 45
Optical interference in epitaxial layers	p. 47
Algorithm to measure the thickness of silicon epitaxial layers for a dispersive infrared spectrometer	p. 47
Measurement of epitaxial layer thickness by a reflectance FTIR spectrometer	p. 48
Emission FTIR for insitu measurement of epilayer thicker during the epitaxy process	p. 50
References	p. 53
The Characterization of Silicon Dioxide and Silicon Nitride Thin Films	p. 55
Introduction	p. 55
The application of infrared spectroscopy to silicon dioxide films	p. 56
Silicon dioxide films grown by thermal oxidation	p. 56
Nitrided silicon dioxide films	p. 61
PECVD silicon dioxide films	p. 63
Silicon dioxide films deposited by the O[subscript 3]/TEOS CVD technique	p. 65
Fluorine-doped silicon dioxide films	p. 66
The application of infrared spectroscopy to silicon nitride films	p. 72
Hydrogen in PECVD silicon nitride	p. 72
The application of infrared spectroscopy to silicon-rich and nitrogen-rich PECVD silicon nitride	p. 76
The application of infrared spectroscopy to ECR PECVD silicon nitride films	p. 77
CVD silicon nitride	p. 78
The application of infrared spectroscopy to silicon oxynitride films	p. 80
Summary	p. 80
References	p. 82
The Characterization of PSG, BPSG, SOG and Other Glasses	p. 87
Introduction	p. 87
Phosphorus content in PSG	p. 88
Boron content and phosphorus content in BPSG	p. 90
Stabilization of PSG and BPSG by annealing	p. 94
The detection of moisture penetration through silicon oxynitride passivation by infrared spectroscopy on PSG below passivation	p. 94
The application of infrared spectroscopy to spin-on-glass (SOG)	p. 97
The application of infrared spectroscopy to other glasses used in microelectronics	p. 101
Summary	p. 102
References	p. 102
The Characterization of Amorphous Silicon and Related Materials	p. 105
Introduction	p. 105
Hydrogen content and bonding in hydrogenated amorphous silicon	p. 106
The application of infrared spectroscopy to hydrogenated amorphous silicon-germanium	p. 109
The application of infrared spectroscopy to hydrogenated amorphous silicon-carbide	p. 112
The application of infrared spectroscopy to diamond like carbon films	p. 115
Diamond films	p. 118
Boron nitride films	p. 118
Porous silicon films	p. 120
Microcrystalline silicon and related materials	p. 121
References	p. 122
Miscellaneous Applications of Infrared Spectroscopy to Microelectronics	p. 125
Introduction	p. 125
The application of infrared spectroscopy to polyimides	p. 125
The application of infrared spectroscopy to silicon-on-insulator (SOI) and bonded silicon wafers	p. 127
Simox	p. 128
The bonding of Si wafers	p. 129
The application of infrared spectroscopy to study the surface physics of silicon	p. 130
The application of infrared spectroscopy to study the cleaning of silicon	p. 133
The measurement of carbon, oxygen and other impurities in gallium arsenide	p. 133
The measurement of EL2 in semi-insulating gallium arsenide	p. 138
Hydrogen passivation in III-V semiconductors	p. 141
Hydrogen passivation in II-VI semiconductors	p. 143
Detection of crystalline defects by infrared light scattering tomography	p. 145
The application of infrared spectroscopy to microelectronics processing	p. 149
Conclusion of the book	p. 150
References	p. 150
Appendix A	p. 155
Index	p. 159
Table of Contents provided by Syndetics. All Rights Reserved.

Infrared Characterization For Microelectronics

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