Gan-based Materials And Devices

Growth, Fabrication, Characterization And Performance

By: Robert F Davis (Editor), Michael S Shur (Editor), Harry B Dietrich (Editor)

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Hardcover | 12 May 2004

At a Glance

Hardcover
300 Pages

Dimensions(cm)
24.13 x 17.15 x 1.91

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The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

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You Can Find This Book In

Non-Fiction Engineering & Technology Electronics & Communications Engineering Electronics Engineering Electronic Devices & Materials Semi-Conductors & Super-Conductors Science Physics Electricity Science in General Energy Technology & Engineering Electrical Engineering

Booktopia Publisher Services World Scientific Publishing Mechanical Engineering & Materials Materials Science

Materials properties of nitrides : summary	p. 1
Kinetics, microstructure and strain in GaN thin films grown via pendeo-epitaxy	p. 21
Strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers	p. 39
Growth of thick GaN films and seeds for bulk crystal growth	p. 51
Cracking of GaN films	p. 63
Direct bonding of GaN and SiC; a novel technique for electronic device fabrication	p. 83
Electronic properties of GaN(0001) - dielectric interfaces	p. 107
Quasi-ballistic and overshoot transport in group III-nitrides	p. 127
High field transport in AlN	p. 155
Generation-recombination noise in GaN-based devices	p. 175
Insulated gate III-N heterostructure field-effect transistors	p. 197
High voltage AlGaN/GaN heterojunction transistors	p. 225
Etched aperture GaN cavet through photoelectrochemical wet etching	p. 245
n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor : the first transistor formed via wafer fusion	p. 265
Table of Contents provided by Blackwell. All Rights Reserved.

Gan-based Materials And Devices

Growth, Fabrication, Characterization And Performance

At a Glance

Hardcover

Shipping

How to return your order

Defective items

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