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GaAs MESFET Circuit Design

By: Robert Soares (Editor), Allen Podell (Foreword by)

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Hardcover | 1 March 1988 | Edition Number 2

At a Glance

Hardcover
604 Pages

Dimensions(cm)
24.13 x 16.51 x 3.81

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Authors' Biographies	p. ix
Foreword	p. xv
Acknowledgments	p. xvii
Fabrication and Operation of GaAs MESFETs	p. 1
Fabrication of GaAs MESFETs	p. 1
Principles of operation of GaAs MESFETs	p. 9
Low frequency characterization of MESFETs	p. 24
References	p. 31
GaAs MESFETs: S Parameter Measurements and their Use in Circuit Design	p. 33
Introduction	p. 33
Basic principles	p. 33
S parameter measurements--general concepts	p. 47
Measurement of the fixture S parameters	p. 55
On-wafer S parameter measurements	p. 63
Utilization of S parameters	p. 67
Conclusion	p. 88
Acknowledgments	p. 88
References	p. 88
Conversions between two-port parameters normalized to Z[superscript 0]	p. 91
Self-calibration procedure: error term determination	p. 94
Synthesis and Design of Small-signal and Low Noise GaAs MESFET Amplifiers	p. 101
Introduction	p. 101
Design considerations for small-signal MESFET amplifiers	p. 102
Bandpass amplifiers using the reactive matching principle	p. 108
Ultrabroadband matched amplifiers	p. 134
Distributed amplifiers	p. 147
Low noise MESFET amplifiers	p. 153
Conclusions	p. 175
Acknowledgments	p. 176
References	p. 176
Linear Simulation and Computer-aided Engineering	p. 183
The computer-aided engineering approach	p. 183
Modelling of circuit elements	p. 185
Linear circuit analysis	p. 193
Optimization	p. 201
Statistical methods	p. 208
Layout	p. 213
Data management	p. 218
Future developments	p. 222
References	p. 224
Nonlinear Analysis	p. 227
Introduction	p. 227
Volterra series	p. 228
The describing-function method	p. 233
Time-domain analysis	p. 236
The harmonic balance method	p. 239
Advantages and disadvantages of each method	p. 245
GaAs MESFET models	p. 246
Applications of the nonlinear MESFET model	p. 270
References	p. 283
Power GaAs MESFET Amplifiers	p. 287
Introduction	p. 287
Device considerations	p. 287
Large-signal characterization and modelling	p. 296
Power amplifier design	p. 314
Acknowledgments	p. 342
References	p. 342
Oscillators	p. 345
Introduction	p. 345
Concept of negative resistance	p. 347
Three-port S parameter characterization of transistors	p. 348
Oscillation and stability conditions	p. 350
Fixed-frequency oscillators	p. 355
Wideband tunable oscillators	p. 382
Oscillator measurements	p. 400
Acknowledgments	p. 410
References	p. 411
Conversion of two-port S parameters to three-port S parameters	p. 414
GaAs Digital Integrated Circuits	p. 417
Introduction	p. 417
Advantages and constraints of GaAs in integrated circuit implementations	p. 418
GaAs MESFET characteristics	p. 424
Main features of the principal GaAs logic families	p. 427
GaAs digital integrated circuit design	p. 434
Manufacture of GaAs digital integrated circuits	p. 438
Examples of GaAs digital integrated circuits	p. 438
GaAs analog integrated circuits	p. 457
Tests of GaAs digital integrated circuits	p. 462
Packaging of GaAs digital integrated circuits	p. 464
References	p. 465
Microwave Monolithic Integrated Circuits	p. 471
Introduction	p. 471
Technology	p. 473
Monolithic circuit components	p. 477
Amplifiers	p. 488
Switching and control functions	p. 497
Oscillators and frequency-processing functions	p. 516
Multifunction MMICs	p. 539
Future developments	p. 542
References	p. 544
An Aspect of GaAs MESFET Reliability: Surface-induced Degradation Mechanisms	p. 551
Introduction	p. 551
Power MESFETs	p. 552
MESFETs developed for digital integrated circuits	p. 567
Conclusion	p. 570
References	p. 571
Index	p. 573
Table of Contents provided by Syndetics. All Rights Reserved.

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