Field-Effect Transistors Technology

From Sustainability to Next-Generation VLSI Design

By: Ashish Raman (Editor), Prabhat Singh (Editor), Naveen Kumar (Editor)

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Hardcover | 8 December 2025 | Edition Number 1

At a Glance

Hardcover
482 Pages

Dimensions(cm)
23.39 x 15.6 x 2.69

Hardcover

RRP $368.00

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The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.

Provides a comprehensive exploration of the transitions occurring in field-effect transistor technology, covering the historical evolution, current advancements, and future trends in field-effect transistors.
Highlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.
Discuss design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.
Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.
Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.

The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology.

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