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Engineering Materials and Processes

Structure, Thermodynamics and Diffusion

By: Edmund G. Seebauer, Meredith C. Kratzer

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Hardcover | 1 December 2008

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Hardcover
310 Pages

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24.13 x 15.88 x 2.54

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Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of "defect engineering". For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

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Introduction	p. 1
References	p. 3
Fundamentals of Defect Ionization and Transport	p. 5
Introduction	p. 5
Thermodynamics of Defect Charging	p. 5
Free Energies, Ionization Levels, and Charged Defect Concentrations	p. 7
Ionization Entropy	p. 13
Energetics of Defect Clustering	p. 15
Effects of Gas Pressure on Defect Concentration	p. 17
Thermal Diffusion	p. 19
Drift in Electric Fields	p. 24
Defect Kinetics	p. 25
Reactions	p. 25
Charging	p. 29
Direct Surface-Bulk Coupling	p. 31
Non-Thermally Stimulated Defect Charging and Formation	p. 32
Photostimulation	p. 32
Ion-Defect Interactions	p. 33
References	p. 34
Experimental and Computational Characterization	p. 39
Experimental Characterization	p. 39
Direct Detection of Bulk Defects	p. 39
Indirect Detection of Bulk Defects	p. 43
Diffusion in the Bulk	p. 44
Direct Detection of Surface Defects	p. 45
Diffusion on the Surface	p. 46
Computational Prediction	p. 47
Density Functional Theory	p. 47
Other Atomistic Methods	p. 50
Maximum Likelihood Estimation	p. 51
Surfaces and Interfaces	p. 56
References	p. 56
Trends in Charged Defect Behavior	p. 63
Defect Formation	p. 63
Effects of Crystal Structure and Atomic Properties	p. 63
Effects of Stoichiometry	p. 66
Defect Geometry	p. 68
Defect Charging	p. 69
Bulk vs. Surface	p. 70
Point Defects vs. Defect Aggregates	p. 71
Defect Diffusion	p. 71
References	p. 72
Intrinsic Defects: Structure	p. 73
Bulk Defects	p. 73
Silicon	p. 76
Germanium	p. 84
Gallium Arsenide	p. 86
Other III-V Semiconductors	p. 92
Titanium Dioxide	p. 95
Other Oxide Semiconductors	p. 100
Surface Defects	p. 105
Silicon	p. 106
Germanium	p. 111
Gallium Arsenide	p. 112
Other III-V Semiconductors	p. 116
Titanium Dioxide	p. 120
Other Oxide Semiconductors	p. 122
References	p. 123
Intrinsic Defects: Ionization Thermodynamics	p. 131
Bulk Defects	p. 131
Silicon	p. 131
Germanium	p. 144
Gallium Arsenide	p. 148
Other III-V Semiconductors	p. 156
Titanium Dioxide	p. 160
Other Oxide Semiconductors	p. 166
Surface Defects	p. 173
Silicon	p. 173
Germanium	p. 176
Gallium Arsenide	p. 178
Other III-V Semiconductors	p. 181
Titanium Dioxide	p. 183
Other Oxide Semiconductors	p. 185
References	p. 187
Intrinsic Defects: Diffusion	p. 195
Bulk Defects	p. 195
Point Defects	p. 196
Associates and Clusters	p. 212
Surface Defects	p. 215
Point Defects	p. 215
Associates and Clusters	p. 222
Photostimulated Diffusion	p. 222
Photostimulated Diffusion in the Bulk	p. 223
Photostimulated Diffusion on the Surface	p. 225
References	p. 226
Extrinsic Defects	p. 233
Bulk Defects	p. 233
Silicon	p. 234
Germanium	p. 249
Gallium Arsenide	p. 255
Other III-V Semiconductors	p. 260
Titanium Dioxide	p. 265
Other Oxide Semiconductors	p. 271
Surface Defects	p. 277
Silicon	p. 278
Gallium Arsenide	p. 280
Titanium Dioxide	p. 281
References	p. 281
Index	p. 291
Table of Contents provided by Ingram. All Rights Reserved.

Engineering Materials and Processes

Structure, Thermodynamics and Diffusion

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Hardcover

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