Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures

By: Marco Fanciulli (Editor)

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Hardcover | 1 September 2009

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The spin degree-of-freedom is o?ering a wide range of intriguing oppor- nities both in fundamental as well as in applied solid-state physics. When combined with the rich and fertile physics of low-dimensional semicondu- ingstructuresandwiththepossibilitytochange,forexample,carrierdensity, electric ?elds or coupling to other quantum systems in a controlled way, an extremely exciting and interesting research ?eld is opened. Most comm- cial electronic devices are based on spin-independent charge transport. In the last two decades, however, scientists have been focusing on the ambitious objective of exploiting the spin degree-of-freedom of the electron to achieve novel functionalities. Ferromagnetic semiconductors, spin transistors, sing- spin manipulations or spin-torque MRAMs (magnetoresistive random access memories) are some of the hot topics. The importance of spin phenomena for new applications was recognized by the Royal Swedish Academy of S- ences by awarding the 2007 Nobel Prize in Physics jointly to Albert Fert and Peter Grun .. berg "for the discovery of giant magnetoresistance". This - fect originates from spin-dependent scattering phenomena in a two-terminal ferromagnetic-paramagnetic-ferromagnetic junction leading to a new type of magnetic memory. The Hall e?ect and its applications remain fertile - search areas. The spin Hall e?ect, in analogy with the conventional Hall e?ect, occurs in paramagnetic systems as a result of spin-orbit interaction.

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Non-Fiction Engineering & Technology Mechanical Engineering & Materials Materials Science Technology in General Nanotechnology Engineering in General Science Physics Materials & States of Matter Condensed Matter Physics including Liquid State & Solid State Physics

Foreword	p. V
Preface	p. VII
Resistively Detected ESR and ENDOR Experiments in Narrow and Wide Quantum Wells: A Comparative Study	p. 1
Introduction	p. 1
Theory	p. 2
Experiment	p. 4
Results	p. 4
Conclusions	p. 11
References	p. 12
Index	p. 13
Electron-Spin Manipulation in Quantum Dot Systems	p. 15
Introduction	p. 15
Single-Spin Manipulation	p. 16
Oscillating Magnetic Field	p. 17
Slanting Zeeman Field	p. 19
Two-Spin Interaction	p. 23
Formulation	p. 23
Hybrid Double Dots	p. 27
Double QD with Slanting Zeeman Field	p. 30
Conclusion	p. 31
References	p. 31
Index	p. 34
Resistively Detected NMR in GaAs/AlGaAs	p. 35
Nuclear Magnetic Resonances with 'Too Few Spins'	p. 36
The 'Too Few Spins' Problem	p. 36
Electrons as an In-Situ Detector of the NMR	p. 37
Recent Advances in GaAs/AlGaAs Semiconductor Quantum Wells	p. 40
Resistively Detected NMR Lineshapes in GaAs/AlGaAs	p. 40
Spin-Lattice Relaxation-Time Measurements	p. 43
Towards a Complete NMR Probe of Quantum Structures	p. 46
NMR in Quantum Electronic Structures of GaAs/AlGaAs	p. 46
NMR on a Chip: Quantum Coherent Control of the Nuclear Spins at the Nanoscale	p. 47
Concluding Remarks	p. 48
References	p. 48
Index	p. 49
Electron-Spin Dynamics in Self-Assembled (In,Ga)As/GaAs Quantum Dots	p. 51
Introduction	p. 51
Experiment	p. 53
Electron g-Factor	p. 54
Creation of Spin Coherence by Spin Initialization	p. 56
Electron-Spin Coherence	p. 65
Summary	p. 77
References	p. 78
Index	p. 80
Single-Electron-Spin Measurements in Si-Based Semiconductor Nanostructures	p. 81
Introduction	p. 81
Measurements of a Single Spin in the SiO₂ of a Submicrometer Si Field Effect Transistor	p. 83
Statistical Measurements	p. 84
Detection of Electron-Spin Resonance (ESR) of a Single Spin	p. 88
Single-Shot Measurement	p. 91
Fabrication and Characterization of Electrostatically Confined Quantum-Dot Structures in Si/SiGe Heterostructures	p. 91
Demonstration of a One-Electron Quantum Dot	p. 92
Characterization of the Spin-Transition Sequence	p. 95
Single-Shot Measurement	p. 96
Concluding Remarks	p. 98
References	p. 98
Index	p. 100
Si/SiGe Quantum Devices, Quantum Wells, and Electron-Spin Coherence	p. 101
Introduction	p. 102
Silicon Quantum Devices	p. 103
Spins and Valleys	p. 106
ESR in Silicon Quantum Wells	p. 107
Samples	p. 109
ESR Measurements	p. 11O
Decoherence Analysis	p. 111
Results	p. 113
Conclusions	p. 115
References	p. 115
Index	p. 126
Electrical Detection of Electron-Spin Resonance in Two-Dimensional Systems	p. 129
Mechanism of Electrical Detection	p. 129
Determination of Spin-Relaxation Times	p. 133
References	p. 138
Index	p. 140
Quantitative Treatment of Decoherence	p. 141
Introduction	p. 141
Measures of Decoherence	p. 142
Relaxation Timescales	p. 142
Quantum Entropy	p. 143
Fidelity	p. 143
Norm of Deviation	p. 145
Arbitrary Initial States	p. 145
Decoherence of Double Quantum-Dot Charge Qubits	p. 146
Model	p. 147
Piezoelectric Interaction	p. 148
Deformation Interaction	p. 150
Error Estimates During Gate Functions	p. 151
Relaxation During the NOT Gate	p. 151
Dephasing During a Phase Gate	p. 154
Qubit Error Estimates	p. 155
Additivity of Decoherence Measures	p. 157
The Maximal Deviation Norm	p. 158
Upper Bound for Measure of Decoherence	p. 160
References	p. 162
Index	p. 167
Measuring the Charge and Spin States of Electrons on Individual Dopant Atoms in Silicon	p. 169
Quantum Computing with Phosphorus in Silicon	p. 170
Electronic Donor States of Phosphorus in Silicon	p. 171
Coupled Pairs of Phosphorus Donors as Charge Qubits	p. 171
Controlled Single-Ion Implantation	p. 173
Single-Ion Detection with Integrated p-i-n Diodes	p. 173
Charge Sensing with Superconducting RF-SETs	p. 174
Layout and Performance of RF-SET Measurements	p. 175
Initialization and Readout with Schottky Contacts	p. 177
Contacting Atomically Doped Devices	p. 177
Magnetic Resonance in Nanoscale Implanted Devices	p. 178
References	p. 181
Index	p. 182
Electron Spin as a Spectrometer of Nuclear-Spin Noise and Other Fluctuations	p. 183
Introduction	p. 183
Noise, Relaxation, and Decoherence	p. 186
The Bloch-Wangsness-Redfield Master Equation	p. 186
Finite Frequency Phase Fluctuations and Coherence Decay in the Semiclassical-Gaussian Approximation	p. 188
Single-Spin Measurement Versus Ensemble Experiments:Different Coherence Times?	p. 194
Electron-Spin Evolution Due to Nuclear Spins: Isotropic and Anisotropic Hyperfine Interactions, Internuclear Couplings and the Secular Approximation	p. 196
The Electron-Nuclear Spin Hamiltonian	p. 196
Electron-Nuclear-Spin Evolution in the Secular Approximation	p. 198
Beyond the Secular Approximation: Nuclear-Nuclear Interactions Mediated by the Electron Spin Hyperfine Interaction	p. 200
Microscopic Calculation of the Nuclear-Spin Noise Spectrum and Electron-Spin Decoherence	p. 202
Nuclear-Spin Noise	p. 203
Mean Field Theory of Noise Broadening: Quasiparticle Lifetimes	p. 206
Electron Spin-Echo Decay of a Phosphorus Impurity in Silicon: Comparison with Experiment	p. 209
Effective-Mass Model for a Phosphorus Impurity in Silicon	p. 209
Explicit Calculations of the Nuclear-Spin Noise Spectrum and Electron Spin-Echo Decay of a Phosphorus Impurity in Silicon	p. 210
Conclusions and Outlook for the Future	p. 215
References	p. 218
Index	p. 220
A Robust and Fast Method to Compute Shallow States without Adjustable Parameters: Simulations for a Silicon-Based Qubit	p. 221
Shallow Impurities in an External Field	p. 223
Envelope Function Approximation	p. 224
The Central-Cell Correction	p. 225
Numerical Basis Set	p. 226
Phosphorous Impurity in Silicon	p. 226
Bulk Ingredients	p. 227
Theoretical Results: Si:P	p. 227
The Core-Correction Contribution	p. 228
Stark Effect	p. 229
Electric-Field Dependence of Superhyperfine Constants	p. 232
Confinement Effects	p. 234
Conclusions	p. 237
References	p. 238
Index	p. 239
Photon-Assisted Tunneling in Quantum Dots	p. 241
Introduction	p. 241
Theory of Photon-Assisted Tunneling in Quantum Dots	p. 242
Hamiltonian Formalism of Tunneling under Microwave Irradiation	p. 243
Tunneling in Quantum Dots under Microwave Irradiation	p. 244
Typical Regimes of Operation	p. 246
Experimental Results in III-V Heterostructure Quantum Dots	p. 247
Group IV Heterostructure Quantum Dots	p. 250
Si/SiO₂ nanoFET Quantum Dots	p. 252
Conclusions	p. 256
References	p. 257
Index	p. 258
Index	p. 259
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Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures

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