
Electromagnetic Analysis Using Transmission Line Variables
By:Â Maurice Weiner
Hardcover | 5 March 2001
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532 Pages
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| Introduction to Transmission Lines and Their Application to Electromagnetic Phenomena | p. 1 |
| Simple Experimental Example | p. 4 |
| Examples of Impulse Sources | p. 6 |
| Model Outline | p. 10 |
| Application of Model for Small Node Resistance | p. 19 |
| Transmission Line Theory Background | p. 20 |
| Initial Conditions of Special Interest | p. 25 |
| One Dimensional TLM Analysis. Comparison with Finite Difference Method | |
| TLM Iteration Method | p. 27 |
| Reverse TLM Iteration | p. 29 |
| Example of Reverse Iteration for Non-Uniform Line | p. 32 |
| Derivation of Scattering Coefficients for Reverse Iteration | p. 32 |
| Complete TLM Iteration (Combining Forward and Reverse Iterations) | p. 36 |
| Finite Difference Method. Comparison with TLM Method | p. 36 |
| Two Dimensional TLM Analysis. Comparison with Finite Difference Method | |
| Boundary Conditions at 2D Node | p. 40 |
| Static Behavior About 2D Node | p. 43 |
| Non-Static Example: Wave Incident on 2D Node | p. 44 |
| Integral Rotational Properties of Field About the Node | p. 47 |
| 2D TLM Iteration Method for Nine Cell Core Matrix | p. 52 |
| 2D Finite Difference Method. Comparison With TLM Method | p. 56 |
| Appendices | |
| Effect of Additional Paths on Weighing Process | p. 64 |
| Novel Applications of TLM Method. Description of Neurological Activity Using the TLM Method | p. 67 |
| Notation and Mapping of Physical Properties | p. 72 |
| 1D Cell Notation and Mapping of Conductivity and Field | p. 74 |
| Neighboring 1D Cells With Unequal Impedance | p. 78 |
| 2D Cell Notation. Mapping of Conductivity and Field | p. 81 |
| 3D Cell Notation. Mapping of Conductivity and Field | p. 89 |
| Other Node Controlled Properties | |
| Node Control of 2D Scattering Coefficients Due to Finite Node Resistance | p. 97 |
| Simultaneous Conductivity Contributions | p. 98 |
| Signal Gain | p. 99 |
| Signal Generation. Use of Node Coupling | p. 100 |
| Mode Conversion | p. 105 |
| Example of Mapping: Node Resistance in a Photoconductive Semiconductor | |
| Semiconductor Switch Geometry (2D) | p. 105 |
| Node Resistance Profile in Semiconductor | p. 109 |
| Scattering Equations | p. 112 |
| 1D Scattering Equations | p. 113 |
| 2D Scattering Equations | p. 116 |
| Effect of Symmetry on Scattering Coefficients | p. 125 |
| 3D Scattering Equations: Coplanar Scattering | p. 128 |
| General Scattering, Including Scattering Normal to Propagation Plane | |
| Equivalent TLM Circuit. Quasi-Coupling Effect | p. 137 |
| Neglect of Quasi-Coupling | p. 139 |
| Simple Quasi-Coupling Circuit: First Order Approximation | p. 141 |
| Correction to Quasi-Coupling Circuit: Second Order Approximation | p. 145 |
| Calculation of Load Impedance with Quasi-Coupling | p. 148 |
| Small Coupling Approximation of Second Order Quasi-Coupling | p. 150 |
| General 3D Scattering Process Using Cell Notation | p. 152 |
| Complete Iterative Equations | p. 164 |
| Contributions of Electric and Magnetic Fields to Total Energy | p. 166 |
| Plane Wave Behavior | |
| Response of 2D Cell Matrix to Input Plane Wave | p. 168 |
| Response of 2D Cell Matrix to Input Waves With Arbitrary Amplitudes | p. 178 |
| Response of 3D Cell Matrix to Input Plane Wave | p. 179 |
| Response of 3D Cell Matrix to Input Waves With Arbitrary Amplitudes | p. 183 |
| Appendices | |
| 3D Scattering Equations With Both Coplanar and Aplanar Contributions | p. 185 |
| 3D Scattering Coefficients With Both Coplanar and Aplanar Contributions | p. 187 |
| 3D Scattering Coefficients in Terms of Circuit Parameters | p. 189 |
| Corrections for Plane Wave and Anisotropy Effects | p. 194 |
| Partition of TLM Waves into Component Waves | p. 194 |
| Scattering Corrections for 2D Plane Waves: Plane Wave Correlations Between Cells | p. 196 |
| Changes to 2D Scattering Coefficients | p. 203 |
| Corrections to Plane Wave Correlation | |
| Correlation of Waves in Adjoining Media With Differing Dielectric Constants | p. 206 |
| Modification of Wave Correlation Adjacent a Conducting Boundary | p. 207 |
| Decorrelation Processes | |
| De-Correlation Due to Sign Disparity of Plane and Symmetric Waves | p. 211 |
| Minimal Solution Using Differing Decorrelation Factors to Remove Sign Disparities | p. 222 |
| Non-Essential De-Correlation Caused by Simultaneous Presence of Forward and Backward In-Line Plane Waves With Same Polarity | p. 226 |
| De-Correlation Treatment of Plane Waves Incident on Dielectric Interface | p. 230 |
| Comments on Interaction of a Plane Wave Front and a Source Emitting Both Plane Wave and Symmetric Components | p. 234 |
| Summary of Correlation/Decorrelation Processes | p. 235 |
| Grid Orientation Effects | |
| Dependence of Wave Energy Dispersal on Grid Orientation | p. 235 |
| Transformation Properties Between Grids | p. 239 |
| Averaging Procedure Among Grids | |
| General Procedure and Grid Specification | p. 242 |
| Vector Description of Plane and Symmetric Waves | p. 243 |
| Energy Content of Plane and Symmetric Waves | p. 246 |
| Principal Axis Grid | p. 247 |
| Simple Averaging Example Without Plane Wave Effects | p. 248 |
| General Averaging Procedure Including Plane Wave Correlations | p. 249 |
| Summary of Field Averaging Procedure | p. 255 |
| Averaging Procedure for Node Resistance | p. 257 |
| Comparison of Standard Numerical Methods and TLM Methods Incorporating TLM Correlations/Decorrelations and Grid Orientation | p. 259 |
| Appendices | |
| 3D Scattering Corrections for Plane Waves (Wave Correlations) | p. 260 |
| Consistency of Plane Wave Correlations With a Simple Quantum Mechanical Model | p. 263 |
| Boundary Conditions and Dispersion | p. 266 |
| Dielectric-Dielectric Interface | p. 267 |
| Node Coupling: Nearest Node and Multi-coupled Node Approximations | |
| Nearest Nodes for 1D Interface | p. 275 |
| Nearest Nodes at 2D Interface | p. 276 |
| Truncated Cell and Oblique Interface | p. 278 |
| Single Index Cell Notation | p. 280 |
| Simplified Iteration Neglecting the Nearest Node Approximation | p. 283 |
| Non-Uniform Dielectric. Use of Cluster Cells | p. 283 |
| Other Boundary Conditions | |
| Dielectric- Open Circuit Interface | p. 287 |
| Dielectric - Conductor Interface | p. 288 |
| Input/Output Conditions | p. 291 |
| Composite Transmission Line | p. 294 |
| Determination of Initial Static Field By TLM Method | p. 295 |
| Time Varying Source Voltage and Antenna Simulation | p. 299 |
| Dispersion | |
| Dispersion Sources | p. 301 |
| Dispersion Example | p. 302 |
| Propagation Velocity in Terms of Wave Number | p. 306 |
| Dispersive Properties of Node Resistance | p. 306 |
| Node Resistance in Terms of Wave Number | p. 307 |
| Anomalous Dispersion | p. 308 |
| Incorporation of Dispersion into TLM formulation | |
| Dispersion Approximations | p. 309 |
| Outline of Dispersion Calculation Using the TLM Method | p. 310 |
| One Dimensional Dispersion Iteration | p. 311 |
| Initial Conditions With Dispersion Present | p. 322 |
| Stability of Initial Profiles With Dispersion Present | p. 323 |
| Replacement of Non-Uniform Field in Cell With Effective Uniform Field | p. 329 |
| Appendices | |
| Specification of Input/Output Node Resistance to Eliminate Multiple Reflections | p. 330 |
| Cell Discharge Properties and Integration of Transport Phenomena Into the TLM Matrix | p. 333 |
| Charge Transfer Between Cells | p. 334 |
| Relationship Between Field and Cell Charge | p. 337 |
| Dependence of Conductivity on Carrier Properties | p. 341 |
| Integration of Carrier Transport Using TLM Notation Changes in Cell Occupancy and its Effect on TLM Iteration | |
| General Continuity Equations | p. 342 |
| Carrier Generation Due to Light Activation | p. 343 |
| Carrier Generation Due to Avalanching: Identical Hole and Electron Drift Velocities | p. 344 |
| Avalanching With Differing Hole and Electron Drift Velocities | p. 346 |
| Two Step Generation Process | p. 350 |
| Recombination | p. 351 |
| Limitations of Simple Exponential Recovery Model | p. 353 |
| Carrier Drift | p. 353 |
| Cell Charge Iteraction.Equivalence of Drift and Inter-Cell Currents | p. 357 |
| Carrier Diffusion | p. 361 |
| Frequency of Transport Iteration | p. 363 |
| Toal Contribution to Changes in Carrier Cell Occupancy | p. 364 |
| Description of TLM Iteration | p. 366 |
| Specification of Geometry | p. 366 |
| Description of Inputs and TLM Iteration Outline | p. 372 |
| Output Format | p. 377 |
| Output Simulation Data | |
| Conditions During Simulation | p. 379 |
| Behavior During Charge-up.Establishment of Static Field Profile | p. 380 |
| Node Resistance R(n,m) During Activation | p. 386 |
| Output Pulse When Semiconductor is Activated | p. 391 |
| Node Recovery and its Effect on Output Pulse | p. 394 |
| Steady State and Transient Field Profiles | p. 396 |
| Partial Activation of Nodes and Effect on Profiles and Output | p. 399 |
| Cell Charge Following Recovery | p. 402 |
| Role of TLM Waves at Charged Boundary | p. 405 |
| Comparison of Possible Boundary Conditions at the Semiconductor/Dielectric Interface | p. 407 |
| Simulation Results for Boundary with Non-Integral Nearest Nodes | p. 408 |
| Comparison of Output With and Without Matched Input/Output Lines | p. 411 |
| Simulation of Plane Wave Effects. Effect of Alternating Input | p. 413 |
| Appendices | |
| Discussion of Program Statements for Semiconductor Switch | p. 418 |
| Program Statements | p. 426 |
| Program Changes for Arbitrary Dielectric Constant, Cell Density, and Device Size | p. 442 |
| Field Decay in Semiconductor Using the TLM Formulation | p. 444 |
| Spice Solutions | p. 450 |
| Photoconductive Switch | p. 451 |
| Traveling Wave Marx Generator | p. 455 |
| Traveling Marx Wave in a Layered Dielectric | p. 460 |
| Simulation of a Traveling Marx Wave in a Layered Dielectric | p. 462 |
| Pulse Transformation and Generation Using Non-Uniform Transmission Lines | |
| Use of Cell Chain to Simulate Pulse Transformer | p. 467 |
| Pulse Transformer Simulation Results | p. 470 |
| Pulse Sources Using Non-Uniform TLM Lines (Switch at Output) | p. 472 |
| Radial Pulse Source (Switch at Output) | p. 473 |
| Pulse Sources With Gain (PFXL Sources) | p. 476 |
| Darlington Pulser | |
| TLM Formulation of Darlington Pulser | p. 481 |
| SPICE Simulation of Lossy Darlington Pulser | p. 485 |
| Appendices | |
| Introduction to SPICE Format | p. 488 |
| Discussion of Format for Photoconductive Switch | p. 488 |
| TLM Analysis of Leading Edge Pulse in a Transformer | p. 496 |
| TLM Analysis of Leading Edge Wave in PFXL | p. 499 |
| Index | p. 507 |
| Table of Contents provided by Syndetics. All Rights Reserved. |
ISBN: 9789810244385
ISBN-10: 981024438X
Published: 5th March 2001
Format: Hardcover
Language: English
Number of Pages: 532
Audience: Professional and Scholarly
Publisher: SINGAPORE UNIV PR
Country of Publication: SG
Dimensions (cm): 22.23 x 15.24 x 3.18
Weight (kg): 0.86
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