| Foreword | p. xi |
| Acknowledgments | p. xiii |
| About the Authors | p. xv |
| What's on the CD-ROM? | p. xvii |
| IC Fabrication Overview | p. 1 |
| Introduction | p. 3 |
| Integrated Circuits | p. 3 |
| The Semiconductor Industry | p. 6 |
| Support Technologies | p. 7 |
| Crystal Growth and Wafer Preparation | p. 7 |
| Contamination Control | p. 8 |
| Circuit Design and Mask Making | p. 10 |
| Process Diagnostics and Metrology | p. 12 |
| Integrated Circuit Fabrication | p. 13 |
| Layering | p. 13 |
| Patterning | p. 18 |
| Doping | p. 21 |
| Process Control and In-line Monitoring | p. 22 |
| Test and Assembly | p. 25 |
| Electrical Tests | p. 25 |
| Die Separation | p. 25 |
| Die Attach and Wire Bonding | p. 25 |
| Encapsulation | p. 26 |
| Final Test | p. 26 |
| Summary | p. 27 |
| Support Technologies | p. 29 |
| Introduction | p. 31 |
| Contamination Control | p. 33 |
| Why Control Contamination? | p. 33 |
| Contamination Sources | p. 35 |
| The Cleanroom | p. 36 |
| Crystal Growth and Wafer Preparation | p. 41 |
| Introduction | p. 41 |
| Silicon Purification | p. 42 |
| Czochralski Silicon Growth | p. 43 |
| Shaping, Grinding, Cutting and Polishing | p. 46 |
| Final Inspection and Shipping | p. 47 |
| Circuit Design | p. 49 |
| Introduction | p. 49 |
| Product Definition and New Product Plan | p. 50 |
| The Design Team | p. 53 |
| The Design Process | p. 55 |
| Design Verification and Tapeout | p. 57 |
| Photomask and Reticle Preparation | p. 59 |
| Introduction | p. 59 |
| Reticle Substrate Preparation | p. 59 |
| Pattern Transfer | p. 60 |
| Inspection and Defect Repair | p. 61 |
| Forming Wells | p. 63 |
| Introduction | p. 65 |
| Initial Oxidation | p. 71 |
| Photolithography | p. 79 |
| Introduction | p. 79 |
| Coat (Spin) | p. 82 |
| Exposure (Step) | p. 83 |
| Develop | p. 84 |
| After Develop Inspect (ADI) | p. 85 |
| Ion Implantation | p. 87 |
| Isolate Active Areas (Shallow Trench Isolation) | p. 93 |
| Introduction to Shallow Trench Isolation | p. 95 |
| Pad Oxide Growth | p. 99 |
| Silicon Nitride Deposition | p. 101 |
| Photolithography for Photo/Etch | p. 105 |
| Hard Mask Formation Using Plasma Etch | p. 107 |
| Hard Mask Overview | p. 107 |
| Plasma Etch Overview | p. 109 |
| Etch Chemistry: Silicon Dioxide and Silicon Nitride | p. 114 |
| Form Trenches in Silicon with Plasma Etch | p. 119 |
| Fill Trenches with Silicon Dioxide | p. 121 |
| Chemical Mechanical Polishing (CMP) to Remove Excess Dioxide | p. 123 |
| Wet Etch Removal of Silicon Nitride and Pad Oxide | p. 127 |
| Building the Transistors | p. 129 |
| Introduction | p. 131 |
| Thin Film Formation | p. 137 |
| Gate Dielectric Oxidation | p. 137 |
| Polycrystalline Silicon (Poly) Deposition | p. 140 |
| Nitride Cap Deposition | p. 142 |
| Poly Gate Formation | p. 143 |
| Photoresist Patterning | p. 143 |
| Plasma Etch | p. 144 |
| Source/Drain Formation | p. 147 |
| Introduction | p. 147 |
| Shallow Implant | p. 149 |
| Spacer Formation | p. 149 |
| High-Dose Implant | p. 151 |
| Anneal | p. 151 |
| Salicide Formation | p. 153 |
| Sputter Cobalt | p. 155 |
| RTP Reaction Forming Silicide | p. 155 |
| Strip Residual Cobalt | p. 156 |
| Anneal the Silicide | p. 156 |
| First Level Metallization | p. 157 |
| Introduction | p. 159 |
| Nitride and Oxide Depositions | p. 163 |
| Nitride Deposition | p. 163 |
| Oxide Deposition | p. 164 |
| CMP Planarization | p. 167 |
| Photo/Etch for Contact Holes | p. 169 |
| Contact Hole Photolithography | p. 169 |
| Contact Etch | p. 170 |
| Tungsten Plug Process | p. 173 |
| Deposit Ti/TiN Barrier/Glue Layers | p. 173 |
| Tungsten CVD | p. 174 |
| Tungsten CMP | p. 176 |
| Low-k Dielectric Process | p. 177 |
| Deposit Low-k Dielectric Film | p. 177 |
| Trench Photolithography and Etch | p. 180 |
| Copper First Level Interconnection Process | p. 183 |
| Ta/TaN Barrier Layer Deposition | p. 183 |
| Sputter Copper (Cu) | p. 185 |
| Electroplate Copper (Cu) | p. 185 |
| Copper CMP | p. 186 |
| Multilevel Metal Interconnects and Dual Damascene | p. 189 |
| Introduction | p. 191 |
| Deposit Barrier Layer and Intermetal Dielectric | p. 195 |
| Dual Damascene Process | p. 197 |
| Introduction | p. 197 |
| Via Photo/Etch | p. 198 |
| Trench Photo/Etch | p. 199 |
| Deposit Barrier Layers | p. 200 |
| Sputter Copper | p. 200 |
| Electroplate Copper | p. 200 |
| CMP to Remove Excess Copper | p. 201 |
| Deposit SiC Barrier Layer | p. 202 |
| Build Additional Layers | p. 202 |
| Form Bonding Pads | p. 203 |
| Final Passivation Process | p. 205 |
| Deposit Final Passivation | p. 205 |
| Photo/Etch for Bonding Pads | p. 205 |
| Test and Assembly | p. 207 |
| Introduction | p. 209 |
| Wafer and Chip Testing | p. 211 |
| In-line Parametric Test | p. 211 |
| Wafer Sort (Probe) | p. 212 |
| Final Functional Test | p. 213 |
| Assembly and Packaging | p. 215 |
| Die Separation | p. 215 |
| Die Attach and Bond Pad Connection | p. 216 |
| Encapsulation | p. 218 |
| Science Overview | p. 219 |
| Introduction | p. 221 |
| Atoms and Molecules | p. 223 |
| The Atom | p. 223 |
| Molecules | p. 226 |
| Organic Molecules | p. 227 |
| Gases | p. 229 |
| Facts about Gases | p. 229 |
| Ions | p. 230 |
| Plasma | p. 230 |
| Free Radicals | p. 231 |
| Excited States | p. 231 |
| Chemistry | p. 233 |
| Introduction | p. 233 |
| Thin Film Deposition Chemistry | p. 233 |
| Plasma Etch Chemistry | p. 235 |
| Solids | p. 237 |
| Conductors and Insulators | p. 237 |
| Semiconductors | p. 238 |
| pn Junctions | p. 239 |
| Electricity, Electric and Magnetic Fields | p. 241 |
| Electric Charges and Fields | p. 241 |
| Electric Current | p. 242 |
| Magnetic Field | p. 243 |
| Plasma Etch Supplement to Chapter 4 | p. 245 |
| Plasma Etcher Theory | p. 247 |
| Plasma Etch Process Requirements | p. 249 |
| Bibliography | p. 251 |
| Index | p. 253 |
| Table of Contents provided by Ingram. All Rights Reserved. |