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Deep Centers in Semiconductors - Sokrates T. Pantelides

Deep Centers in Semiconductors

Hardcover Published: 30th November 1992
ISBN: 9782881245626
Number Of Pages: 928

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Offering a comprehensive view of research in semiconductor deep centres, this volume examines several key deep centres, all chosen to illustrate a variety of essential concepts. For each deep centre chosen a scientist instrumental in its development discusses the many experimental and theoretical techniques used to achieve the current understanding of that centre. This second edition contains five new sections treating recent developments in the field, including a new chapter on hydrogen in crystalline semiconductors.

Preface
Preface to the First Edition
Perspectives in the Past, Present and Future of Deep Centers in Semiconductorsp. 1
Chalcogen Impurities in Siliconp. 87
The Lattice Vacancy in Siliconp. 177
Oxygen and Oxygen Associates in Gallium Phosphide and Related Semiconductorsp. 215
Oxygen in Gallium Arsenidep. 379
The Two Dominant Recombination Centers in n-Type Gallium Phosphidep. 407
The Mid-Gap Donor Level EL2 in Gallium Arsenidep. 457
The Mid-Gap Donor Level EL2 in Gallium Arsenide: Recent Developmentsp. 547
DX Centers in III-V Alloysp. 591
DX Centers in III-V Alloys: Recent Developmentsp. 643
Iron Impurity Centers in III-V Semiconductorsp. 667
Chromium in Gallium Arsenidep. 753
Chromium in II-VI Compoundsp. 817
The Optoelectronic Properties of Copper in Zinc-Cation II-VI Compound Semiconductorsp. 843
Hydrogen in Crystalline Semiconductorsp. 899
Indexp. 929
Table of Contents provided by Blackwell. All Rights Reserved.

ISBN: 9782881245626
ISBN-10: 2881245625
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 928
Published: 30th November 1992
Publisher: CRC PR INC
Country of Publication: NL
Dimensions (cm): 23.5 x 15.24  x 5.72
Weight (kg): 1.43
Edition Number: 2

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