| Preface | p. vii |
| Macroscopic Current Flow | p. 1 |
| The Classical (Drude) Model of Electronic Conduction and Ohm's Law | p. 2 |
| The Quantum (Free-Electron) Model of Electronic Conduction | p. 4 |
| The Nearly-Free Electron Model of Electronic Conduction and Band Structure | p. 13 |
| Effective Mass | p. 21 |
| The Origins of Electrical Resistance | p. 24 |
| Size Effects on Electrical Resistance | p. 31 |
| Overview of Transistors | p. 32 |
| Surface Effects | p. 36 |
| Quantum Current Flow | p. 41 |
| Why Shrink Devices? | p. 44 |
| Point Contacts: From Mesoscopic to Atomic | p. 46 |
| Conductance from Transmission | p. 48 |
| Calculation of Transmission Probability and Current Flow in Quantum Systems | p. 55 |
| Introduction to the concept of transmission probability | p. 55 |
| Single potential step | p. 57 |
| Single potential barrier | p. 61 |
| Symmetric barrier: No applied voltage | p. 61 |
| Asymmetric barrier: Current flow due to applied bias | p. 66 |
| Double potential barrier | p. 69 |
| Symmetric barriers: No applied voltage | p. 69 |
| Tunnelling through multiple barriers with no phase coherence | p. 74 |
| Asymmetric barriers: Applied voltage | p. 78 |
| Resonant tunnelling devices: Further details | p. 82 |
| A more realistic calculation for a single potential barrier: The WKB approximation | p. 85 |
| Techniques for the Fabrication of Quantum Nanostructures | p. 92 |
| Mesoscopic Transport: Between the Nanoscale and the Macroscale | p. 99 |
| Introduction | p. 99 |
| Boltzmann Transport Equation | p. 100 |
| Resistivity of Thin Films and Wires: Surface Scattering | p. 100 |
| General principles | p. 100 |
| 1D confinement: Thin film | p. 103 |
| 2D confinement: Rectangular wire | p. 105 |
| 2D confinement: Cylindrical wires | p. 106 |
| Resistivity of Thin Films and Wires: Grain-Boundary Scattering | p. 107 |
| Experimental Aspects: How to Measure the Resistance of a Thin Film | p. 113 |
| Scanning-Probe Multimeters | p. 119 |
| Scanning-Probe Microscopy: An Introduction | p. 119 |
| Scanning Tunnelling Microscopy | p. 121 |
| Basic principles | p. 121 |
| Scanning tunnelling microscopy in practise | p. 126 |
| Atomic Force Microscopy | p. 134 |
| Modes of operation of AFM | p. 135 |
| Kelvin-probe force microscopy | p. 140 |
| Conducting mode AFM | p. 143 |
| Electromigration: How Currents Move Atoms, and Implications for Nanoelectronics | p. 155 |
| Introduction to Electromigration, Wire Morphology | p. 155 |
| Fundamentals of Electromigration - The Electron Wind | p. 156 |
| Electromigration-Induced Stress in a Nanowire Device | p. 158 |
| Current-Induced Heating in a Nanowire Device | p. 160 |
| Diffusion of Material, Importance of Surfaces, Failure of Wires | p. 167 |
| Experimental Observations of Electromigration and Heating in Nanowires | p. 169 |
| Failure as a function of wire length | p. 170 |
| Failure as a function of wire width | p. 170 |
| Experimental Observations of Electromigration in Micron-Scale Wires | p. 173 |
| Wire Heating - Additional Considerations | p. 174 |
| Consequences for Nanoelectronics | p. 181 |
| Elements of Single-Electron and Molecular Electronics | p. 185 |
| Single-Electron Transport and Coulomb Blockade | p. 185 |
| Molecular Electronics: Why Bother? | p. 188 |
| Mechanisms of Electron Transport Through Molecules | p. 190 |
| Visualising Transport Through Molecules | p. 192 |
| The Contact Resistance Problem | p. 193 |
| Contacting Molecules | p. 194 |
| Nanogaps formed by electron-beam lithography | p. 195 |
| Nanogaps formed by electromigration | p. 195 |
| Mechanically-controlled break junctions | p. 198 |
| Molecular sandwiches | p. 200 |
| STM probing of molecules | p. 201 |
| The Future | p. 202 |
| Solutions to Problems in Chapter 2 | p. 207 |
| Index | p. 209 |
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