Breakdown Phenomena In Semiconductors And Semiconductor Devices

By: Michael Levinshtein (Editor), Juha Kostamovaara (Editor), Sergey Vainshtein (Editor)

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Hardcover | 8 September 2005

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224 Pages

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Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.

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Preface	p. vii
Introductory Chapter	p. 1
Elementary act of impact ionization	p. 1
Auger recombination	p. 5
Energy of electrons and holes as a function of electric field	p. 8
Main approaches for describing ionization phenomena	p. 10
Approximation of the characteristic breakdown field F[subscript i]	p. 10
Monte-Carlo simulation	p. 13
Approximation of ionization rates	p. 14
Avalanche Multiplication	p. 21
Fundamentals of avalanche multiplication	p. 21
Avalanche photodiodes	p. 26
Spectral sensitivity	p. 26
Dark current	p. 27
Quantum efficiency	p. 29
Time response	p. 29
Multiplication factor	p. 32
Avalanche excess noise	p. 36
Static Avalanche Breakdown	p. 39
Introduction	p. 39
General form of the static "breakdown" current-voltage characteristic	p. 39
Microplasma breakdown	p. 41
Homogeneous ("mature") breakdown	p. 44
Contact resistivity	p. 44
Thermal resistance	p. 45
Space-charge resistance	p. 47
Negative differential resistance	p. 50
Qualitative consideration	p. 50
The zero doping (p - i - n) structure	p. 50
Computer simulation	p. 55
Second part of the current-voltage characteristic, with positive differential resistance at very high current densities	p. 58
Avalanche suppressor diodes	p. 60
Principle of operation	p. 60
Main parameters	p. 62
IMPATT diodes	p. 65
Principle of operation	p. 66
Some physical problems that arise at very high frequencies	p. 75
Avalanche Injection	p. 81
Introduction	p. 81
Avalanche injection in n[superscript +] - n - n[superscript +] (p[superscript +] - p - p[superscript +]) structures	p. 81
Avalanche injection in bipolar transistors	p. 91
Introduction	p. 91
Avalanche transistor: conventional regime of operation	p. 92
Difference in breakdown voltages of a BJT between the common-base and common-emitter configurations	p. 92
Dependence of the bipolar transistor gain coefficient [alpha subscript 0] on current density	p. 98
Main features of ABT operation in a conventional regime	p. 103
Operation regime of a Si avalanche transistor at very high current densities	p. 105
Introduction	p. 105
Steady-state collector field distribution. Residual collector voltage	p. 109
Transient properties of Si avalanche transistor at extreme current densities	p. 115
Operation regime of GaAs avalanche transistor at very high current densities	p. 122
Experimental results	p. 122
Breakdown in moving Gunn domain in GaAs: qualitative analysis	p. 124
Computer simulations of superfast switching in GaAs avalanche transistor	p. 133
Dynamic Breakdown	p. 137
Introduction	p. 137
Impact ionization front (TRAPATT zone)	p. 140
Silicon Avalanche Sharpers (SAS)	p. 142
Computer simulations and comparison with experimental results	p. 144
Stability of the plane ionization front	p. 148
Short-wavelength instability of the plane ionization front	p. 150
Long-wave length instability of the plane ionization front	p. 152
The problem of the initial carriers	p. 154
GaAs diodes with delayed breakdown	p. 157
Superfast switching of GaAs thyristors	p. 162
Main features of streamer breakdown	p. 168
Introduction	p. 168
Analytical theory of a streamer discharge	p. 169
Computer simulation	p. 176
Conclusion	p. 179
List of Symbols	p. 181
Bibliography	p. 185
Index	p. 195
Table of Contents provided by Ingram. All Rights Reserved.

Breakdown Phenomena In Semiconductors And Semiconductor Devices

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