Advances in Semiconductor Lasers and Applications to Optoelectronics

By: Michael A Stroscio, Mitra Dutta

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Hardcover | 1 December 1999

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Hardcover
448 Pages

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26.04 x 17.78 x 3.81

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Foreword by Charles H Townes
This volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. To understand scattering processes in heterostructure lasers and related optoelectronic devices, it is essential to consider the role of dimensional confinement of charge carriers as well as acoustical and optical phonons in quantum structures. Indeed, it is important to consider the confinement of both phonons and carriers in the design and modeling of novel semiconductor lasers such as the tunnel injection laser, quantum well intersubband lasers, and quantum dot lasers. The full exploitation of dimensional confinement leads to the exciting new capability of scattering time engineering in novel semiconductor lasers.As a result of continuing advances in techniques for growing quantum heterostructures, recent developments are likely to be followed in coming years by many more advances in semiconductor lasers and optoelectronics. As our understanding of these devices and the ability to fabricate them grow, so does our need for more sophisticated theories and simulation methods bridging the gap between quantum and classical transport.

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Non-Fiction Engineering & Technology Electronics & Communications Engineering Electronics Engineering Electronic Devices & Materials Semi-Conductors & Super-Conductors Other Technologies & Applied Sciences Applied Optics Laser Technology & Holography Energy Technology & Engineering Electrical Engineering Booktopia Publisher Services

World Scientific Publishing

Foreword
Preface to "Advances in Semiconductor Lasers and Applications to Optoelectronics"
Tunnel Injection Lasers	p. 1
Quantum Well Intersubband Lasers	p. 21
Advances in Measurements of Physical Parameters of Semiconductor Lasers	p. 55
Lateral Injection Lasers	p. 95
Extended Wavelength (1.1 to 1.3 [mu]m) InGaAs/GaAs Quantum Dot GaAs-Based Vertical-Cavity Surface-Emitting and Lateral-Cavity Edge-Emitting Lasers	p. 133
GaN-Based Laser Diodes	p. 161
Quantum-Dot Semiconductor Lasers	p. 235
Device Characteristics of Low-Threshold Quantum-Dot Lasers	p. 263
Nitride Lasers: Optical Gain and Device Implications	p. 293
Advanced Concepts in Intersubband Unipolar Lasers	p. 317
Optoelectronic Properties of Strained Wurtzite GaN Quantum-Well Lasers	p. 343
Carrier Capture in Semiconductor Quantum Well Lasers: A Quantum Transport Analysis	p. 365
Quantum State Engineering Based on Electromagnetic Analogies and Numerical Methods for Semiconductor Intersubband Lasers	p. 389
Advanced Semiconductor Lasers: Phonon Engineering and Phonon Interactions	p. 419
Table of Contents provided by Blackwell. All Rights Reserved.

Advances in Semiconductor Lasers and Applications to Optoelectronics

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Hardcover

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