Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment

Part I: Technology and Economics. High temperature electronics ??? cluster effects; C. Johnston and A. Crossley. On the evolution of SOI materials and devices; J.P. Colinge.SOI Technology as a basis for microphotonic-microelectronic integrated devices; M.Yu. Barabanenkov et al. Part II: SOI Material Technologies. Smart Cut Technology: the path for advanced SOI substrates; H. Moriceau et al. Porous silicon based SOI: history and prospects; V. Bondarenko et al. Achievement of SiGe-on-insulator technology; Y. Ishikawaet al. CVD diamond substrates for SOI technologies; V. Ralchenko et al. Radical-beam quasiepitaxy technology for fabrication of wide-band gap semiconductors on insulator; G. Natsvlishvili et al. Impact of hydrostatic pressure during annealing of Si:O on creation of SIMOX-like structures; A. Misiuk et al. SiO2 and Si3N4 phase formation by ion implantation with in-situ ultrasound treatment; O. Martinyuk et al. Fabrication and characterisation of Silicon On Insulator substrates incorporating thermal vias; M.F. Bain et al.Part III: Reliability and Operation of SOI Devices in Harsh Environment. Reliability and electrical fluctuations in advanced SOI CMOS devices; J. Jomaah and F. Balestra. Hydrogen and high-temperature charge instability of SOI structures and MOSFETs; A. Nazarov. Recent advances in SOI MOSFET devices and circuits for ultra-low power / high temperature applications; D. Levacq et al. Silicon-on-insulator circuits for application at high temperatures; V. Nakov. High-voltage SOI devices for automotive applications; J. Olsson. Heat generation analysis in SOI LDMOS power transistors; J. Roig et al. Novel SOI MOSFET structure for operation over a wide range of temperatures; V.Ya. Uritsky. MOSFETs scaling down: advantages and disadvantages for high temperature applications; V. Kilchytska et al. Temperature dependence of RF losses in HR SOI substrates; D. Lederer and J.-P. Raskin. Part IV: Radiation Effects.Review of radiation effects in single- and multiple-gate SOI MOSFETs; S. Cristoloveanu. Radiation effects in SOI: Irradiation by high energy ions and electrons; I. Antonova et al.Radiation characteristics of the short p-channel MOSFETs on SOI substrates??; A. Evtukh et al.Total dose behavior of partially depleted DeleCut SOI MOSFETs; O.V. Naumova et al. Radiation effect on electrical properties of fully-depleted UNIBOND SOI MOSFETs??; Y. Houk et al.Part V??: Characterization and Simulation of SOI Devices Operating under Harsh Environment. Low cost high temperature test system for SOI devices; G. Russell et al. Characterization of carrier generation in thin-film SOI devices by reverse gated-diode technique and its application at high temperatures; T.E. Rudenko et al. Back-gate induced noise overshoot in partially-depleted SOI MOSFETs; N. Lukyanchikova et al.Part VI: Novel SOI Devices and Sensors Operating at Harsh Conditions. SiGe heterojunction bipolar transistors on insulating substrates; S. Hall et al. Silicon-on-Insulator substrates with buried ground planes; M. Bain et al. High-voltage high-current DMOS transistor compatible with high-temperature thin-film SOI CMOS applications; P. Godignon et al. A novel low leakage EEPROM cell for application in an extended temperature range (-40 ??C up to 225 ??C); S. G. M. Richter et al.. Design, fabrication and characterization of SOI pixel detectors of ionizing radiation; D. Tomashevski et al. Polysilicon-on-insulator layers at cryogenic temperatures and high magnetic fields; A.A. Druzhinin et al. Planar photomagnetic effect SOI sensors for various applications with low detection limit; V.N. Dobrovolsky and V. Rossokhaty. Theoretical limit for the SiO2 thickness in silicon MOS devices; B. Majkusiak, J. Walczak. Compact model of the nanoscale gate-all-around MOSFET; D. Jim??nez. Self-assembled semiconductor nanowires on silicon and insulating substrates: Experimental behavior; T. Kamins, S. Sharma, M. Saif Islam. Fabrication of SOI nano devices??; X. Tang et al.