Foreword xi
Preface xiii
Contributors xvii
Acknowledgments xix
Introduction: Historic Timeline xxi
PART I BASIC ELECTRON DEVICES
1 Bipolar Transistors 3
John D. Cressler and Katsuyoshi Washio
1.1 Motivation 3
1.2 The pn Junction and its Electronic Applications 5
1.3 The Bipolar Junction Transistor and its Electronic Applications 10
1.4 Optimization of Bipolar Transistors 15
1.5 Silicon-Germanium Heterojunction Bipolar Transistors 17
References 19
2 MOSFETs 21
Hiroshi Iwai, Simon Min Sze, Yuan Taur and Hei Wong
2.1 Introduction 21
2.2 MOSFET Basics 21
2.3 The Evolution of MOSFETs 27
2.4 Closing Remarks 31
References 31
3 Memory Devices 37
Kinam Kim and Dong Jin Jung
3.1 Introduction 37
3.2 Volatile Memories 39
3.3 Non-Volatile Memories 41
3.4 Future Perspectives of MOS Memories 43
3.5 Closing Remarks 45
References 46
4 Passive Components 49
Joachim N. Burghartz and Colin C. McAndrew
4.1 Discrete and Integrated Passive Components 49
4.2 Application in Analog ICs and DRAM 52
4.3 The Planar Spiral Inductor-A Case Study 54
4.4 Parasitics in Integrated Circuits 57
References 57
5 Emerging Devices 59
Supriyo Bandyopadhyay, Marc Cahay and Avik W. Ghosh
5.1 Non-Charge-Based Switching 59
5.2 Carbon as a Replacement for Silicon and the Rise of Grpahene Electronics and Moletronics 63
5.3 Closing Remarks 66
References 67
PART II ASPECTS OF DEVICE AND IC MANUFACTURING
6 Electronic Materials 71
James C. Sturm, Ken Rim, James S. Harris and Chung-Chih Wu
6.1 Introduction 71
6.2 Silicon Device Technology 71
6.3 Compound Semiconductor Devices 75
6.4 Electronic Displays 79
6.5 Closing Remarks 82
References 83
7 Compact Modeling 85
Colin C. McAndrew and Laurence W. Nagel
7.1 The Role of Compact Models 85
7.2 Bipolar Transistor Compact Modeling 87
7.3 MOS Transistor Compact Modeling 89
7.4 Compact Modeling of Passive Components 92
7.5 Benchmarking and Implementation 94
References 94
8 Technology Computer Aided Design 97
David Esseni, Christoph Jungemann, J¨urgen Lorenz, Pierpaolo Palestri, Enrico Sangiorgi and Luca Selmi
8.1 Introduction 97
8.2 Drift-Diffusion Model 98
8.3 Microscopic Transport Models 100
8.4 Quantum Transport Models 101
8.5 Process and Equipment Simulation 102
References 105
9 Reliability of Electron Devices, Interconnects and Circuits 107
Anthony S. Oates, Richard C. Blish, Gennadi Bersuker and Lu Kasprzak
9.1 Introduction and Background 107
9.2 Device Reliability Issues 109
9.3 Circuit-Level Reliability Issues 114
9.4 Microscopic Approaches to Assuring Reliability of ICs 117
References 117
10 Semiconductor Manufacturing 121
Rajendra Singh, Luigi Colombo, Klaus Schuegraf, Robert Doering and Alain Diebold
10.1 Introduction 121
10.2 Substrates 122
10.3 Lithography and Etching 122
10.4 Front-End Processing 124
10.5 Back-End Processing 125
10.6 Process Control 128
10.7 Assembly and Test 129
10.8 Future Directions 131
References 131
PART III APPLICATIONS BASED ON ELECTRON DEVICES
11 VLSI Technology and Circuits 135
Kaustav Banerjee and Shuji Ikeda
11.1 Introduction 135
11.2 MOSFET Scaling Trends 136
11.3 Low-Power and High-Speed Logic Design 137
11.4 Scaling Driven Technology Enhancements 139
11.5 Ultra-Low Voltage Transistors 144
11.6 Interconnects 144
11.7 Memory Design 148
11.8 System Integration 150
References 152
12 Mixed-Signal Technologies and Integrated Circuits 157
Bin Zhao and James A. Hutchby
12.1 Introduction 157
12.2 Analog/Mixed-Signal Technologies in Scaled CMOS 159
12.3 Data Converter ICs 161
12.4 Mixed-Signal Circuits for Low Power Displays 164
12.5 Image Sensor Technologies and Circuits 166
References 168
13 Memory Technologies 171
Stephen Parke, Kristy A. Campbell and Chandra Mouli
13.1 Semiconductor Memory History 171
13.2 State of Mainstream Semiconductor Memory Today 178
13.3 Emerging Memory Technologies 183
13.4 Closing Remarks 185
References 186
14 RF and Microwave Semiconductor Technologies 189
Giovanni Ghione, Fabrizio Bonani, Ruediger Quay and Erich Kasper
14.1 III-V-Based: GaAs and InP 189
14.2 Si and SiGe 194
14.3 Wide Bandgap Devices (Group-III Nitrides, SiC and Diamond) 197
References 199
15 Power Devices and ICs 203
Richard K. Williams, Mohamed N. Darwish, Theodore J. Letavic and Mikael O¨stling
15.1 Overview of Power Devices and ICs 203
15.2 Two-Carrier and High-Power Devices 205
15.3 Power MOSFET Devices 206
15.4 High-Voltage and Power ICs 209
15.5 Wide Bandgap Power Devices 210
References 211
16 Photovoltaic Devices 213
Steven A. Ringel, Timothy J. Anderson, Martin A. Green, Rajendra Singh and Robert J. Walters
16.1 Introduction 213
16.2 Silicon Photovoltaics 215
16.3 Polycrystalline Thin-Film Photovoltaics 218
16.4 III-V Compound Photovoltaics 219
16.5 Future Concepts in Photovoltaics 220
References 222
17 Large Area Electronics 225
Arokia Nathan, Arman Ahnood, Jackson Lai and Xiaojun Guo
17.1 Thin-Film Solar Cells 225
17.2 Large Area Imaging 229
17.3 Flat Panel Displays 233
References 235
18 Microelectromechanical Systems (MEMS) 239
Darrin J. Young and Hanseup Kim
18.1 Introduction 239
18.2 The 1960s - First Micromachined Structures Envisioned 239
18.3 The 1970s - Integrated Sensors Started 240
18.4 The 1980s - Surface Micromachining Emerged 241
18.5 The 1990s - MEMS Impacted Various Fields 244
18.6 The 2000s - Diversified Sophisticated Systems Enabled by MEMS 247
18.7 Future Outlook 248
References 248
19 Vacuum Device Applications 251
David K. Abe, Baruch Levush, Carter M. Armstrong, Thomas Grant and William L. Menninger
19.1 Introduction 251
19.2 Traveling-Wave Devices 252
19.3 Klystrons 255
19.4 Inductive Output Tubes 258
19.5 Crossed-Field Devices 259
19.6 Gyro-Devices 260
References 262
20 Optoelectronic Devices 265
Leda Lunardi, Sudha Mokkapati and Chennupati Jagadish
20.1 Introduction 265
20.2 Light Emission in Semiconductors 266
20.3 Photodetectors 268
20.4 Integrated Optoelectronics 269
20.5 Optical Interconnects 271
20.6 Closing Remarks 271
References 271
21 Devices for the Post CMOS Era 275
Wilfried Haensch
21.1 Introduction 275
21.2 Devices for the 8-nm Node with Conventional Materials 277
21.3 New Channel Materials and Devices 282
21.4 Closing Remarks 287
References 287
Index 291
