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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 - C. Robert Helms

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2

By: C. Robert Helms (Editor), Bruce E. Deal (Editor)

Hardcover Published: 30th September 1993
ISBN: 9780306444197
Number Of Pages: 503

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The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

Thermal Oxidation Mechanisms and Modeling
Introductionp. 1
Silicon Oxides and Oxidationp. 3
Use of [superscript 18]O Labelling to Study Growth Mechanisms in Dry Oxidation of Siliconp. 7
Strain Dependent Diffusion During Dry Thermal Oxidation of Crystalline Sip. 15
Oxidation of Silicon in Oxygen: Measurement of Film Thickness and Kineticsp. 23
Modeling Process-Dependent Thermal Silicon Dioxide (SiO[subscript 2]) Films on Siliconp. 31
Novel Oxidation Methods and Characterization
Introductionp. 43
New Approach to Chemically Enhanced Oxidation - A Reviewp. 45
Kinetics of Oxidation of Silicon by Electron Cyclotron Resonance Plasmasp. 55
Mechanisms of Oxidation Rate Enhancement in Negative-Point Oxygen Corona Discharge Processing of SiO[subscript 2] Films on Sip. 63
High Pressure Oxidation for Low Temperature Passivation of Si[subscript 1-x]Ge[subscript x] Alloysp. 71
A New Ellipsometry Technique for Interface Analysis: Application to Si-SiO[subscript 2]p. 81
Observation of Thin SiO[subscript 2] Films Using IR-RASp. 91
Deconvolution of Thickness-Averaged Structural and Optical Properties of Thermally Grown and RPECVD SiO[subscript 2] Filmsp. 99
TEM Investigations of the Oxidation Kinetics of Amorphous Silicon Filmsp. 109
Deposition and Properties of SiO[subscript 2]
Introductionp. 117
Thermal and X-Ray Production of Point Defects in Vitreous SiO[subscript 2]p. 119
A Review of the EPR Spectroscopy of the Point Defects in [alpha]-Quartz: The Decade 1982-1992p. 131
Formation of Si/SiO[subscript 2] Heterostructures by Low-Temperature, Plasma-Assisted Oxidation and Deposition Processesp. 145
Comparison and SiO[subscript 2] Thin Film Properties Deposited by Distributed Electron Cyclotron Resonance Plasma Using Two Different Oxidant Gases: N[subscript 2]O or O[subscript 2]p. 157
Low Temperature Synthesis and Characterization of Silicon Dioxide Filmsp. 165
Chemical Properties of Si Surfaces Related to Oxidation and Oxide Deposition
Introductionp. 175
Native Oxide Growth and Hydrogen Bonding Features on Chemically Cleaned Silicon Surfacesp. 177
Understanding the Surface Chemical and Structural Implications of HF Solution Cleaning of Siliconp. 187
Pre-Gate Oxide Si Surface Controlp. 199
Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH[subscript 4]F Treated Si(111) Surfacesp. 207
Silicon Surface Analysis and Very Thin Silicon Oxide Characterization after HF/Ethanol Preoxidation Silicon Cleaningp. 215
Effects of Metallic Impurities Upon Thin Gate Oxide Integrity and Related Bulk Properties in CZ Sip. 223
Chemical, Structural, and Microroughness Effects at the Si-SiO[subscript 2] Interface
Introductionp. 235
Local Bonding at SiO[subscript 2]/Si Interfacesp. 237
High-Resolution Transmission Electron Microscope Image of the SiO[subscript 2]/(001)Si Interfacep. 247
Dependence of Surface Microroughness on Types of Silicon Substratesp. 257
The Effect of Surface Roughness on Gate Oxide Leakage Currentsp. 267
A Double Sacrificial Oxide Process for Smoother 150 [actual symbol not reproducible] SiO[subscript 2] Gate Oxide Interfacesp. 273
Effect of Solidification Induced Defects in CZ-Silicon Upon Thin Gate Oxide Integrityp. 279
Effects of D-Defects in CZ Silicon Upon Thin Gate Oxide Integrityp. 289
Oxidation Induced Changes in the Si Surface Microroughnessp. 299
Novel Structures, Processes, and Phenomena
Introductionp. 307
Properties of Simox and Related Systemsp. 309
Reoxidized Nitrided Oxide Gate Dielectrics for Advanced CMOSp. 319
Interface Properties and Device Reliability of High Quality PECVD Oxide for MOS Applicationsp. 329
Charge Trapping in an Oxide-Nitride-Oxide Gate Dielectricp. 337
Interface Trap Density Reduction and Oxide Profiling for MOS Capacitors with Fluorinated Gate Oxide Dielectricsp. 345
Physics of Extreme Quantum Confinement Exemplified by Si/SiO[subscript 2] Systemp. 353
The Integrity of Very Thin Silicon Films Deposited on SiO[subscript 2]p. 357
Researches of SiO[subscript 2] on InP and GaAs MOS Structuresp. 363
Defects and Hot-Carrier Induced Damage in Si-SiO[subscript 2] Systems
Introductionp. 371
Generation of Random Telegraph Noise by Single Si/SiO[subscript 2] Interfacial Defectsp. 373
Single Electron Transfer from the Channel of a Sub-[mu]m MOSFET to an Individual Interface Trapp. 383
Defect Structure and Generation Mechanisms at the Si/SiO[subscript 2] Interfacep. 393
The Influence of Crystal Orientation and Processing Conditions on the Energy Distribution of Traps at the Si-SiO[subscript 2] Interfacep. 403
Charge Trapping and Defect Generation in Thermal Oxide Layersp. 411
Optically Induced Nitrogen Dangling Bonds in Amorphous Hydrogenated Silicon Nitride Thin Filmsp. 421
Radiation and Hydrogen Induced Effects in Silicon-Silicon Dioxide Systems
Introductionp. 427
Impact Ionization and Degradation in Silicon Dioxide Films on Siliconp. 429
Hot-Electron Dynamics in Thin Silicon Dioxide Films Studied by Photon-Induced Electron Transmissionp. 439
Constant Current Stress Breakdown in Ultrathin SiO[subscript 2] Filmsp. 447
The Role of Hydrogen in Interface Trap Creation by Radiation in MOS Devices - A Reviewp. 455
Hydrogen-Related E' Centers and Positive Charge in Irradiated Oxide Filmsp. 465
Removal of Traps in Process-Damaged MOS Structures by Room-Temperature Hydrogenationp. 473
Hot-Electron Induced Hydrogen Redistribution in SiO[subscript 2]p. 481
Effects of Introducing H[subscript 2] into Irradiated MOSFET's from Room Temperature to [actual symbol not reproducible]p. 489
Author Indexp. 499
Subject Indexp. 501
Table of Contents provided by Blackwell. All Rights Reserved.

ISBN: 9780306444197
ISBN-10: 0306444194
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 503
Published: 30th September 1993
Publisher: Springer Science+Business Media
Country of Publication: US
Dimensions (cm): 25.4 x 17.8  x 2.54
Weight (kg): 2.66