| Thermal Oxidation Mechanisms and Modeling | |
| Introduction | p. 1 |
| Silicon Oxides and Oxidation | p. 3 |
| Use of [superscript 18]O Labelling to Study Growth Mechanisms in Dry Oxidation of Silicon | p. 7 |
| Strain Dependent Diffusion During Dry Thermal Oxidation of Crystalline Si | p. 15 |
| Oxidation of Silicon in Oxygen: Measurement of Film Thickness and Kinetics | p. 23 |
| Modeling Process-Dependent Thermal Silicon Dioxide (SiO[subscript 2]) Films on Silicon | p. 31 |
| Novel Oxidation Methods and Characterization | |
| Introduction | p. 43 |
| New Approach to Chemically Enhanced Oxidation - A Review | p. 45 |
| Kinetics of Oxidation of Silicon by Electron Cyclotron Resonance Plasmas | p. 55 |
| Mechanisms of Oxidation Rate Enhancement in Negative-Point Oxygen Corona Discharge Processing of SiO[subscript 2] Films on Si | p. 63 |
| High Pressure Oxidation for Low Temperature Passivation of Si[subscript 1-x]Ge[subscript x] Alloys | p. 71 |
| A New Ellipsometry Technique for Interface Analysis: Application to Si-SiO[subscript 2] | p. 81 |
| Observation of Thin SiO[subscript 2] Films Using IR-RAS | p. 91 |
| Deconvolution of Thickness-Averaged Structural and Optical Properties of Thermally Grown and RPECVD SiO[subscript 2] Films | p. 99 |
| TEM Investigations of the Oxidation Kinetics of Amorphous Silicon Films | p. 109 |
| Deposition and Properties of SiO[subscript 2] | |
| Introduction | p. 117 |
| Thermal and X-Ray Production of Point Defects in Vitreous SiO[subscript 2] | p. 119 |
| A Review of the EPR Spectroscopy of the Point Defects in [alpha]-Quartz: The Decade 1982-1992 | p. 131 |
| Formation of Si/SiO[subscript 2] Heterostructures by Low-Temperature, Plasma-Assisted Oxidation and Deposition Processes | p. 145 |
| Comparison and SiO[subscript 2] Thin Film Properties Deposited by Distributed Electron Cyclotron Resonance Plasma Using Two Different Oxidant Gases: N[subscript 2]O or O[subscript 2] | p. 157 |
| Low Temperature Synthesis and Characterization of Silicon Dioxide Films | p. 165 |
| Chemical Properties of Si Surfaces Related to Oxidation and Oxide Deposition | |
| Introduction | p. 175 |
| Native Oxide Growth and Hydrogen Bonding Features on Chemically Cleaned Silicon Surfaces | p. 177 |
| Understanding the Surface Chemical and Structural Implications of HF Solution Cleaning of Silicon | p. 187 |
| Pre-Gate Oxide Si Surface Control | p. 199 |
| Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH[subscript 4]F Treated Si(111) Surfaces | p. 207 |
| Silicon Surface Analysis and Very Thin Silicon Oxide Characterization after HF/Ethanol Preoxidation Silicon Cleaning | p. 215 |
| Effects of Metallic Impurities Upon Thin Gate Oxide Integrity and Related Bulk Properties in CZ Si | p. 223 |
| Chemical, Structural, and Microroughness Effects at the Si-SiO[subscript 2] Interface | |
| Introduction | p. 235 |
| Local Bonding at SiO[subscript 2]/Si Interfaces | p. 237 |
| High-Resolution Transmission Electron Microscope Image of the SiO[subscript 2]/(001)Si Interface | p. 247 |
| Dependence of Surface Microroughness on Types of Silicon Substrates | p. 257 |
| The Effect of Surface Roughness on Gate Oxide Leakage Currents | p. 267 |
| A Double Sacrificial Oxide Process for Smoother 150 [actual symbol not reproducible] SiO[subscript 2] Gate Oxide Interfaces | p. 273 |
| Effect of Solidification Induced Defects in CZ-Silicon Upon Thin Gate Oxide Integrity | p. 279 |
| Effects of D-Defects in CZ Silicon Upon Thin Gate Oxide Integrity | p. 289 |
| Oxidation Induced Changes in the Si Surface Microroughness | p. 299 |
| Novel Structures, Processes, and Phenomena | |
| Introduction | p. 307 |
| Properties of Simox and Related Systems | p. 309 |
| Reoxidized Nitrided Oxide Gate Dielectrics for Advanced CMOS | p. 319 |
| Interface Properties and Device Reliability of High Quality PECVD Oxide for MOS Applications | p. 329 |
| Charge Trapping in an Oxide-Nitride-Oxide Gate Dielectric | p. 337 |
| Interface Trap Density Reduction and Oxide Profiling for MOS Capacitors with Fluorinated Gate Oxide Dielectrics | p. 345 |
| Physics of Extreme Quantum Confinement Exemplified by Si/SiO[subscript 2] System | p. 353 |
| The Integrity of Very Thin Silicon Films Deposited on SiO[subscript 2] | p. 357 |
| Researches of SiO[subscript 2] on InP and GaAs MOS Structures | p. 363 |
| Defects and Hot-Carrier Induced Damage in Si-SiO[subscript 2] Systems | |
| Introduction | p. 371 |
| Generation of Random Telegraph Noise by Single Si/SiO[subscript 2] Interfacial Defects | p. 373 |
| Single Electron Transfer from the Channel of a Sub-[mu]m MOSFET to an Individual Interface Trap | p. 383 |
| Defect Structure and Generation Mechanisms at the Si/SiO[subscript 2] Interface | p. 393 |
| The Influence of Crystal Orientation and Processing Conditions on the Energy Distribution of Traps at the Si-SiO[subscript 2] Interface | p. 403 |
| Charge Trapping and Defect Generation in Thermal Oxide Layers | p. 411 |
| Optically Induced Nitrogen Dangling Bonds in Amorphous Hydrogenated Silicon Nitride Thin Films | p. 421 |
| Radiation and Hydrogen Induced Effects in Silicon-Silicon Dioxide Systems | |
| Introduction | p. 427 |
| Impact Ionization and Degradation in Silicon Dioxide Films on Silicon | p. 429 |
| Hot-Electron Dynamics in Thin Silicon Dioxide Films Studied by Photon-Induced Electron Transmission | p. 439 |
| Constant Current Stress Breakdown in Ultrathin SiO[subscript 2] Films | p. 447 |
| The Role of Hydrogen in Interface Trap Creation by Radiation in MOS Devices - A Review | p. 455 |
| Hydrogen-Related E' Centers and Positive Charge in Irradiated Oxide Films | p. 465 |
| Removal of Traps in Process-Damaged MOS Structures by Room-Temperature Hydrogenation | p. 473 |
| Hot-Electron Induced Hydrogen Redistribution in SiO[subscript 2] | p. 481 |
| Effects of Introducing H[subscript 2] into Irradiated MOSFET's from Room Temperature to [actual symbol not reproducible] | p. 489 |
| Author Index | p. 499 |
| Subject Index | p. 501 |
| Table of Contents provided by Blackwell. All Rights Reserved. |
