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The MOCVD Challenge : Volume 2: A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications - Manijeh Razeghi

The MOCVD Challenge

Volume 2: A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications

Hardcover Published: 1st January 1995
ISBN: 9780750303095
Number Of Pages: 444

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The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Along with Volume 1, this book provides a personal account of the author's own pioneering research, an authoritative overview of the development of the MOCVD technique, and the technique's impact on the development of new materials, devices, and their applications.
Coverage begins with an introduction to III-V compounds and devices and growth techniques for multilayers and heterostructures. The book then details how an MOCVD system works and how design affects material growth and sourcing of precursor materials. It also examines Iin- and Iex-situ growth techniques, with the differential reflectivity treatment applied to lattice matched and mis-matched conditions. The author gives an in-depth treatment of the GaInPGaAs system, including optical investigations of quantum wells and superlattices. The book concludes with an up-to-date discussion of the current use, novel developments, and future potential for optical devices, GaAs-based lasers and heterojunctions, and optoelectronic integrated circuits.
The MOCVD Challenge is an invaluable introduction and guide for researchers in materials science, applied physics, and electrical engineering, who study the properties and applications of compound (III-V) semiconductor materials.

Professor Manijeh Razeghi is director of the Center for Quantum Devices at Northwestern University and leads an internationally renowned research team exploring the use of the MOCVD growth technique. Formerly head of research at Thomson-CSF in France, she was awarded the IBM Europe Science and Technology Prize for her early research into MOCVD.

Preface
Foreword
Introduction
Introduction to Semiconductor Compoundsp. 1
MOCVD Growth Techniquep. 22
In situ Characterization during MOCVDp. 54
Ex situ Characterization Techniquesp. 114
MOCVD Growth of GaAs Layersp. 170
Growth and Characterization of the GaInP-GaAs Systemp. 199
Optical Devicesp. 283
GaAs-based Lasersp. 317
GaAs-based heterojunction electron devices grown by MOCVDp. 369
Optoelectronic Integrated Circuits (OEICs)p. 403
App. A Effect of Substrate Miscut on the Measured Superlattice Periodp. 419
App. B Optimization of Thickness and In Composition of InGaAs Well for 980 nm Lasersp. 422
App. C Energy Levels and Laser Gains in a Quantum Well (GaInAsP): the 'Effective Mass Approximation'p. 426
App. D Luttinger-Kohn Hamiltonianp. 429
App. E Infrared Detectorsp. 431
Indexp. 437
Table of Contents provided by Blackwell. All Rights Reserved.

ISBN: 9780750303095
ISBN-10: 0750303093
Series: Mocvd Challenge
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 444
Published: 1st January 1995
Publisher: TAYLOR & FRANCIS
Country of Publication: GB
Dimensions (cm): 24.13 x 16.51  x 2.54
Weight (kg): 0.82
Edition Number: 1

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